no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films
|
Ishchenko, D. V. |
|
2017 |
46 |
4 |
p. 277-281 |
article |
2 |
Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface
|
Kuznetsova, I. A. |
|
2017 |
46 |
4 |
p. 252-260 |
article |
3 |
Copper etching kinetics in a high-frequency discharge of freon R12
|
Dunaev, A. V. |
|
2017 |
46 |
4 |
p. 261-266 |
article |
4 |
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles
|
Sogoyan, A. V. |
|
2017 |
46 |
4 |
p. 282-289 |
article |
5 |
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming
|
Mordvintsev, V. M. |
|
2017 |
46 |
4 |
p. 243-251 |
article |
6 |
Effect of the mixture composition on the electrophysical parameters and emission spectra of CF2Cl2/Ar and CF2Cl2/He plasma
|
Pivovarenok, S. A. |
|
2017 |
46 |
4 |
p. 267-271 |
article |
7 |
Erratum to: “Influence of external conditions on physical processes and plasma parameters in a model of a high-frequency hybrid plasma system”
|
Aleksandrov, A. F. |
|
2017 |
46 |
4 |
p. 299 |
article |
8 |
Erratum to: “Thin film negative electrode based on silicon composite for lithium-ion batteries”
|
Airapetov, A. A. |
|
2017 |
46 |
4 |
p. 297 |
article |
9 |
Erratum to: “Thin-film positive electrode based on vanadium oxides for lithium-ion accumulators”
|
Vasil’ev, S. V. |
|
2017 |
46 |
4 |
p. 298 |
article |
10 |
Integrated optical-controlled diamond sensors
|
Tsukanov, A. V. |
|
2017 |
46 |
4 |
p. 225-242 |
article |
11 |
Method of radiational identification of a plant and characterization of integrated circuit technology
|
Sogoyan, A. V. |
|
2017 |
46 |
4 |
p. 290-296 |
article |
12 |
Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
|
Egorkin, V. I. |
|
2017 |
46 |
4 |
p. 272-276 |
article |