no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode
|
Grigoriev, F. I. |
|
2016 |
45 |
7 |
p. 469-473 |
article |
2 |
320 × 240 CMOS array for the spectral range of 3–5 μm based on PtSi photodiodes
|
Belin, A. M. |
|
2016 |
45 |
7 |
p. 474-477 |
article |
3 |
Computer-aided design flow of devices for generating and processing signals for satellite navigation systems
|
Chebykin, A. G. |
|
2016 |
45 |
7 |
p. 504-510 |
article |
4 |
Design of a multielement infrared thermal detector
|
Pevtsov, E. Ph. |
|
2016 |
45 |
7 |
p. 511-515 |
article |
5 |
Development and research of MIS varicaps with charge transfer
|
Surin, Yu. V. |
|
2016 |
45 |
7 |
p. 484-487 |
article |
6 |
Development of magnetic semiconductor microsystems technology
|
Amelichev, V. V. |
|
2016 |
45 |
7 |
p. 528-531 |
article |
7 |
Double stage low-frequency noise equivalent circuit of green InGaN LEDs for description of noise characteristics
|
Sergeev, V. A. |
|
2016 |
45 |
7 |
p. 498-503 |
article |
8 |
Efficiency of frequency transformation on MOS transistors with a built-in channel under intensively handicapped radioreception
|
Zhuravlev, D. V. |
|
2016 |
45 |
7 |
p. 478-483 |
article |
9 |
Features of the effect of the supply current on the operation mode of an oscillator based on an IMPATT diode taking into account the reflected signal
|
Dem’yanenko, A. V. |
|
2016 |
45 |
7 |
p. 464-468 |
article |
10 |
Formation of nanosized elements of microwave transistor gates by ion beam lithography
|
Lavrentyev, K. K. |
|
2016 |
45 |
7 |
p. 451-454 |
article |
11 |
Implementation of fast high-order digital filters based on new-generation FPGAs
|
Krylikov, N. O. |
|
2016 |
45 |
7 |
p. 532-536 |
article |
12 |
Intelligent system and electron components for controlling individual heat consumption
|
Shtern, Yu. I. |
|
2016 |
45 |
7 |
p. 488-491 |
article |
13 |
Mathematical simulation of the influence of the doping concentration on the drain current of an SOI field-effect hall sensor
|
Kozlov, A. V. |
|
2016 |
45 |
7 |
p. 447-450 |
article |
14 |
Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz
|
Mal’tsev, P. P. |
|
2016 |
45 |
7 |
p. 516-521 |
article |
15 |
Refined model of low-impedance film resistors with a comb-like structure
|
Sadkov, V. D. |
|
2016 |
45 |
7 |
p. 492-497 |
article |
16 |
Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems
|
Kozlov, A. V. |
|
2016 |
45 |
7 |
p. 522-527 |
article |
17 |
Study of RF transistor with submicron T-shaped gate fabricated by nanoimprint lithography
|
Egorkin, V. I. |
|
2016 |
45 |
7 |
p. 455-459 |
article |
18 |
TCAD leakage current analysis of a 45 nm MOSFET structure with a high-k dielectric
|
Petrosyants, K. O. |
|
2016 |
45 |
7 |
p. 460-463 |
article |