no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A distribution of Ga+ ions in a silicon substrate for nano-dimensional masking
|
Bobrinetskii, I. I. |
|
2014 |
43 |
1 |
p. 15-20 |
article |
2 |
A modifying algorithm of the topological VLSI layer by dummy filling features based on modeling the chemical-mechanical planarization
|
Amirkhanov, A. V. |
|
2014 |
43 |
1 |
p. 72-79 |
article |
3 |
A semianalytical model of a nanowire-based field-effect transistor
|
Khomyakov, A. N. |
|
2014 |
43 |
1 |
p. 57-71 |
article |
4 |
Assembly of 3D-wares with the use of wire leadouts
|
Zenin, V. V. |
|
2014 |
43 |
1 |
p. 21-33 |
article |
5 |
Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor
|
Grigor’ev, Yu. N. |
|
2014 |
43 |
1 |
p. 34-41 |
article |
6 |
Formation and dielectric properties of nanolayers of tantalum and aluminum oxides
|
Ezhovskii, Yu. K. |
|
2014 |
43 |
1 |
p. 42-48 |
article |
7 |
Formation of the nickel-platinum alloy silicide Schottky barriers
|
Solodukha, V. A. |
|
2014 |
43 |
1 |
p. 1-8 |
article |
8 |
Investigation of the GaAs surface after etching in the plasma of mixtures HCl/Ar, HCl/Cl2, and HCl/H2 by atomic-force microscopy
|
Dunaev, A. V. |
|
2014 |
43 |
1 |
p. 9-14 |
article |
9 |
Micro systems engineering and digital holographic flash memory
|
Zhukov, V. A. |
|
2014 |
43 |
1 |
p. 80-90 |
article |
10 |
Simulation of spatially-heterogeneous oxygen precipitation in silicon with allowance for internal mechanical stresses
|
Goldshtein, R. V. |
|
2014 |
43 |
1 |
p. 49-56 |
article |