| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Complementary-transistor wideband path for the compensation of analog ICs designed to operate under pulsed ionizing irradiation
|
Agakhanyan, T. M.
|
|
|
35 |
3 |
p. 197-199
|
artikel
|
| 2 |
Complementary-transistor wideband path for the compensation of analog ICs designed to operate under pulsed ionizing irradiation
|
Agakhanyan, T. M.
|
|
2006
|
35 |
3 |
p. 197-199
|
artikel
|
| 3 |
Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology
|
Kirgizova, A. V.
|
|
|
35 |
3 |
p. 162-176
|
artikel
|
| 4 |
Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology
|
Kirgizova, A. V.
|
|
2006
|
35 |
3 |
p. 162-176
|
artikel
|
| 5 |
Enhancing the performance of radiation-hardened embedded computer systems
|
Antimirov, V. M.
|
|
|
35 |
3 |
p. 200-204
|
artikel
|
| 6 |
Enhancing the performance of radiation-hardened embedded computer systems
|
Antimirov, V. M.
|
|
2006
|
35 |
3 |
p. 200-204
|
artikel
|
| 7 |
Estimating the IC upset/failure threshold of dose rate for a radiation pulse sequence
|
Chumakov, A. I.
|
|
|
35 |
3 |
p. 150-155
|
artikel
|
| 8 |
Estimating the IC upset/failure threshold of dose rate for a radiation pulse sequence
|
Chumakov, A. I.
|
|
2006
|
35 |
3 |
p. 150-155
|
artikel
|
| 9 |
Foreword to the special issue on ionizing-radiation effects in microelectronics
|
|
|
2006
|
35 |
3 |
p. 137
|
artikel
|
| 10 |
Modeling and simulation of the enhanced low-dose-rate sensitivity of thick isolating layers in advanced ICs
|
Zebrev, G. I.
|
|
|
35 |
3 |
p. 177-184
|
artikel
|
| 11 |
Modeling and simulation of the enhanced low-dose-rate sensitivity of thick isolating layers in advanced ICs
|
Zebrev, G. I.
|
|
2006
|
35 |
3 |
p. 177-184
|
artikel
|
| 12 |
Modeling neutron ionization effects on high-density CMOS circuit elements
|
Zebrev, G. I.
|
|
|
35 |
3 |
p. 185-196
|
artikel
|
| 13 |
Modeling neutron ionization effects on high-density CMOS circuit elements
|
Zebrev, G. I.
|
|
2006
|
35 |
3 |
p. 185-196
|
artikel
|
| 14 |
Modeling rail-span collapse in ICs exposed to a single radiation pulse
|
Chumakov, A. I.
|
|
|
35 |
3 |
p. 156-161
|
artikel
|
| 15 |
Modeling rail-span collapse in ICs exposed to a single radiation pulse
|
Chumakov, A. I.
|
|
2006
|
35 |
3 |
p. 156-161
|
artikel
|
| 16 |
Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model
|
Nikiforov, A. Y.
|
|
|
35 |
3 |
p. 138-149
|
artikel
|
| 17 |
Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits: A nonlinear model
|
Nikiforov, A. Y.
|
|
2006
|
35 |
3 |
p. 138-149
|
artikel
|
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