| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs
|
Obolenskii, S. V.
|
|
2004
|
33 |
2 |
p. 116-119
|
artikel
|
| 2 |
Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET
|
Obolenskii, S. V.
|
|
2004
|
33 |
2 |
p. 120-125
|
artikel
|
| 3 |
Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects
|
Chumakov, A. I.
|
|
2004
|
33 |
2 |
p. 106-110
|
artikel
|
| 4 |
Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results
|
Gromov, D. V.
|
|
2004
|
33 |
2 |
p. 111-115
|
artikel
|
| 5 |
Mathematical Modeling of Ionizing-Radiation Effects in ICs: A Review
|
Agakhanyan, T. M.
|
|
2004
|
33 |
2 |
p. 64-67
|
artikel
|
| 6 |
Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits
|
Nikiforov, A. Y.
|
|
2004
|
33 |
2 |
p. 80-91
|
artikel
|
| 7 |
One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets
|
Chumakov, A. I.
|
|
2004
|
33 |
2 |
p. 92-98
|
artikel
|
| 8 |
Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model
|
Nikiforov, A. Y.
|
|
2004
|
33 |
2 |
p. 68-79
|
artikel
|
| 9 |
Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse Shape
|
Chumakov, A. I.
|
|
2004
|
33 |
2 |
p. 99-105
|
artikel
|
| 10 |
Special Issue on Radiation Hardness Assurance in Microelectronics
|
|
|
2004
|
33 |
2 |
p. 63
|
artikel
|
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