| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
CurrentVoltage Characteristics of Two-Electrode Elements with Carbon Nanotubes
|
I. I. Bobrinetskii
|
|
2003
|
32 |
2 |
p. 79-81
3 p.
|
artikel
|
| 2 |
Current–Voltage Characteristics of Two-Electrode Elements with Carbon Nanotubes
|
Bobrinetskii, I. I.
|
|
2003
|
32 |
2 |
p. 79-81
|
artikel
|
| 3 |
Electrochemical Etching of a Niobium Film through a Thin Nanomask Formed by AFM Tip-Induced Local Oxidation
|
A. N. Red'kin
|
|
2003
|
32 |
2 |
p. 88-90
3 p.
|
artikel
|
| 4 |
Electrochemical Etching of a Niobium Film through a Thin Nanomask Formed by AFM Tip-Induced Local Oxidation
|
Red'kin, A. N.
|
|
2003
|
32 |
2 |
p. 88-90
|
artikel
|
| 5 |
High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2
|
V. A. Gritsenko
|
|
2003
|
32 |
2 |
p. 69-74
6 p.
|
artikel
|
| 6 |
High-Permittivity-Insulator EEPROM Cell Using Al2O3 or ZrO2
|
Gritsenko, V. A.
|
|
2003
|
32 |
2 |
p. 69-74
|
artikel
|
| 7 |
Impulse-Current Generation by the Bispin: Factors Determining the Peak Current
|
A. P. Lysenko
|
|
2003
|
32 |
2 |
p. 82-87
6 p.
|
artikel
|
| 8 |
Impulse-Current Generation by the Bispin: Factors Determining the Peak Current
|
Lysenko, A. P.
|
|
2003
|
32 |
2 |
p. 82-87
|
artikel
|
| 9 |
InxGa1 xAs Strained-Layer Quantum Well in a Pseudomorphic Heterostructure: High-Resolution XRD Characterization for Different Quantum-Well Thicknesses
|
A. M. Afanas'ev
|
|
2003
|
32 |
2 |
p. 63-68
6 p.
|
artikel
|
| 10 |
InxGa 1–xAs Strained-Layer Quantum Well in a Pseudomorphic Heterostructure: High-Resolution XRD Characterization for Different Quantum-Well Thicknesses
|
Afanas'ev, A. M.
|
|
2003
|
32 |
2 |
p. 63-68
|
artikel
|
| 11 |
Multilevel-Injection Characterization of Positive-Charge Generation and Relaxation in MOS Oxide
|
V. V. Andreev
|
|
2003
|
32 |
2 |
p. 119-124
6 p.
|
artikel
|
| 12 |
Multilevel-Injection Characterization of Positive-Charge Generation and Relaxation in MOS Oxide
|
Andreev, V. V.
|
|
2003
|
32 |
2 |
p. 119-124
|
artikel
|
| 13 |
NANODEV: A Nanoelectronic-Device Simulation Software System
|
I. I. Abramov
|
|
2003
|
32 |
2 |
p. 97-104
8 p.
|
artikel
|
| 14 |
NANODEV: A Nanoelectronic-Device Simulation Software System
|
Abramov, I. I.
|
|
2003
|
32 |
2 |
p. 97-104
|
artikel
|
| 15 |
Planar Power MOSFETs for Smart Power CMOS Switches
|
M. A. Korolev
|
|
2003
|
32 |
2 |
p. 75-78
4 p.
|
artikel
|
| 16 |
Planar Power MOSFETs for Smart Power CMOS Switches
|
Korolev, M. A.
|
|
2003
|
32 |
2 |
p. 75-78
|
artikel
|
| 17 |
Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation
|
V. V. Belyakov
|
|
2003
|
32 |
2 |
p. 105-118
14 p.
|
artikel
|
| 18 |
Prediction of Local and Global Ionization Effects on ICs: The Synergy between Numerical and Physical Simulation
|
Belyakov, V. V.
|
|
2003
|
32 |
2 |
p. 105-118
|
artikel
|
| 19 |
Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers
|
V. A. Skidanov
|
|
2003
|
32 |
2 |
p. 91-95
5 p.
|
artikel
|
| 20 |
Surface-Photovoltage Measurement of Volume Electron Lifetime in p-Si Wafers
|
Skidanov, V. A.
|
|
2003
|
32 |
2 |
p. 91-95
|
artikel
|
| 21 |
Temperature Dependence of Carrier Generation at the SiliconLead-Borosilicate-Glass Interface
|
S. I. Vlasov
|
|
2003
|
32 |
2 |
p. 95-96
2 p.
|
artikel
|
| 22 |
Temperature Dependence of Carrier Generation at the Silicon–Lead-Borosilicate-Glass Interface
|
Vlasov, S. I.
|
|
2003
|
32 |
2 |
p. 95-96
|
artikel
|
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