no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
A Helicon Plasma Source
|
O. V. Braginskii |
|
2000 |
29 |
6 |
p. 380-390 11 p. |
article |
2 |
A Helicon Plasma Source
|
Braginskii, O. V. |
|
2000 |
29 |
6 |
p. 380-390 |
article |
3 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
V. Ya. Uritskii |
|
2000 |
29 |
6 |
p. 417-422 6 p. |
article |
4 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
Uritskii, V. Ya. |
|
2000 |
29 |
6 |
p. 417-422 |
article |
5 |
High-Rate Deposition of Amorphous Silicon
|
B. G. Budagyan |
|
2000 |
29 |
6 |
p. 391-396 6 p. |
article |
6 |
High-Rate Deposition of Amorphous Silicon
|
Budagyan, B. G. |
|
2000 |
29 |
6 |
p. 391-396 |
article |
7 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic CurrentVoltage Characteristics of Ion Depolarization
|
E. I. Gol'dman |
|
2000 |
29 |
6 |
p. 406-412 7 p. |
article |
8 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion Depolarization
|
Gol'dman, E. I. |
|
2000 |
29 |
6 |
p. 406-412 |
article |
9 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
S. A. Krivelevich |
|
2000 |
29 |
6 |
p. 376-379 4 p. |
article |
10 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
Krivelevich, S. A. |
|
2000 |
29 |
6 |
p. 376-379 |
article |
11 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Yu. I. Balkarei |
|
2000 |
29 |
6 |
p. 355-361 7 p. |
article |
12 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Balkarei, Yu. I. |
|
2000 |
29 |
6 |
p. 355-361 |
article |
13 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
V. Ya. Uritskii |
|
2000 |
29 |
6 |
p. 413-416 4 p. |
article |
14 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
Uritskii, V. Ya. |
|
2000 |
29 |
6 |
p. 413-416 |
article |
15 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
A. I. Vorob'eva |
|
2000 |
29 |
6 |
p. 368-375 8 p. |
article |
16 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
Vorob'eva, A. I. |
|
2000 |
29 |
6 |
p. 368-375 |
article |
17 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
P. A. Arutyunov |
|
2000 |
29 |
6 |
p. 401-405 5 p. |
article |
18 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
Arutyunov, P. A. |
|
2000 |
29 |
6 |
p. 401-405 |
article |
19 |
Stabilization of StructureImpurity and Electrophysical Parameters in the Si/SiO2 System
|
N. Ya. Zaitsev |
|
2000 |
29 |
6 |
p. 397-400 4 p. |
article |
20 |
Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 System
|
Zaitsev, N. Ya. |
|
2000 |
29 |
6 |
p. 397-400 |
article |
21 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 xAs/GaAs System
|
A. A. Lomov |
|
2000 |
29 |
6 |
p. 362-367 6 p. |
article |
22 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System
|
Lomov, A. A. |
|
2000 |
29 |
6 |
p. 362-367 |
article |