| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Helicon Plasma Source
|
O. V. Braginskii
|
|
2000
|
29 |
6 |
p. 380-390
11 p.
|
artikel
|
| 2 |
A Helicon Plasma Source
|
Braginskii, O. V.
|
|
2000
|
29 |
6 |
p. 380-390
|
artikel
|
| 3 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
V. Ya. Uritskii
|
|
2000
|
29 |
6 |
p. 417-422
6 p.
|
artikel
|
| 4 |
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures
|
Uritskii, V. Ya.
|
|
2000
|
29 |
6 |
p. 417-422
|
artikel
|
| 5 |
High-Rate Deposition of Amorphous Silicon
|
B. G. Budagyan
|
|
2000
|
29 |
6 |
p. 391-396
6 p.
|
artikel
|
| 6 |
High-Rate Deposition of Amorphous Silicon
|
Budagyan, B. G.
|
|
2000
|
29 |
6 |
p. 391-396
|
artikel
|
| 7 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic CurrentVoltage Characteristics of Ion Depolarization
|
E. I. Gol'dman
|
|
2000
|
29 |
6 |
p. 406-412
7 p.
|
artikel
|
| 8 |
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion Depolarization
|
Gol'dman, E. I.
|
|
2000
|
29 |
6 |
p. 406-412
|
artikel
|
| 9 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
S. A. Krivelevich
|
|
2000
|
29 |
6 |
p. 376-379
4 p.
|
artikel
|
| 10 |
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic Structures
|
Krivelevich, S. A.
|
|
2000
|
29 |
6 |
p. 376-379
|
artikel
|
| 11 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Yu. I. Balkarei
|
|
2000
|
29 |
6 |
p. 355-361
7 p.
|
artikel
|
| 12 |
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central Processor
|
Balkarei, Yu. I.
|
|
2000
|
29 |
6 |
p. 355-361
|
artikel
|
| 13 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
V. Ya. Uritskii
|
|
2000
|
29 |
6 |
p. 413-416
4 p.
|
artikel
|
| 14 |
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive Centers
|
Uritskii, V. Ya.
|
|
2000
|
29 |
6 |
p. 413-416
|
artikel
|
| 15 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
A. I. Vorob'eva
|
|
2000
|
29 |
6 |
p. 368-375
8 p.
|
artikel
|
| 16 |
Resistors Integrated into MCM-D Modules: Fabrication and Performance
|
Vorob'eva, A. I.
|
|
2000
|
29 |
6 |
p. 368-375
|
artikel
|
| 17 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
P. A. Arutyunov
|
|
2000
|
29 |
6 |
p. 401-405
5 p.
|
artikel
|
| 18 |
Space Surface Parameters Determined from Fourier Transforms in Atomic Force Microscopy
|
Arutyunov, P. A.
|
|
2000
|
29 |
6 |
p. 401-405
|
artikel
|
| 19 |
Stabilization of StructureImpurity and Electrophysical Parameters in the Si/SiO2 System
|
N. Ya. Zaitsev
|
|
2000
|
29 |
6 |
p. 397-400
4 p.
|
artikel
|
| 20 |
Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 System
|
Zaitsev, N. Ya.
|
|
2000
|
29 |
6 |
p. 397-400
|
artikel
|
| 21 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 xAs/GaAs System
|
A. A. Lomov
|
|
2000
|
29 |
6 |
p. 362-367
6 p.
|
artikel
|
| 22 |
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System
|
Lomov, A. A.
|
|
2000
|
29 |
6 |
p. 362-367
|
artikel
|
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