| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab Initio Modeling of the Electronic and Energy Structure and Opening the Band Gap of a 4p-Element-Doped Graphene Monolayer
|
Asadov, M. M.
|
|
|
|
5 |
p. 314-323
|
artikel
|
| 2 |
A Computer Investigation of the Effect of High-Resistance Layer Inhomogeneities on Resistive Switching in a Bismuth Selenide Microcrystal Structure
|
Sirotkin, V. V.
|
|
|
|
5 |
p. 363-371
|
artikel
|
| 3 |
Active Integral High Pass Filters
|
Rekhviashvili, S. Sh.
|
|
|
|
5 |
p. 311-317
|
artikel
|
| 4 |
Active Rectifier with Low Losses
|
Babenko, V. P.
|
|
|
|
5 |
p. 318-324
|
artikel
|
| 5 |
Afanas’ev Aleksandr Mikhailovich 06/08/1938-08/10/2010
|
|
|
2011
|
|
5 |
p. 301-302
|
artikel
|
| 6 |
A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data
|
Shashkin, V. I.
|
|
2010
|
|
5 |
p. 323-330
|
artikel
|
| 7 |
Aligned carbon tubes synthesized using porous aluminum oxide
|
Vorob’eva, A. I.
|
|
2012
|
|
5 |
p. 285-292
|
artikel
|
| 8 |
An adsorption ellipsometric method for studying porous films and coatings
|
Tolmachev, V. A.
|
|
|
|
5 |
p. 331-344
|
artikel
|
| 9 |
Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation
|
Vyurkov, V. V.
|
|
2018
|
|
5 |
p. 290-298
|
artikel
|
| 10 |
A new method of formation of the masking image (relief) directly during the electron-beam exposure of the resist
|
Bruk, M. A.
|
|
2013
|
|
5 |
p. 261-269
|
artikel
|
| 11 |
A New Voltage Level Shifter For Low-Power Applications
|
Shubin, V. V.
|
|
2019
|
|
5 |
p. 335-339
|
artikel
|
| 12 |
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
|
M. I. Gorlov
|
|
2002
|
|
5 |
p. 295-304
10 p.
|
artikel
|
| 13 |
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
|
Gorlov, M. I.
|
|
2002
|
|
5 |
p. 295-304
|
artikel
|
| 14 |
An Overview of the NBTI Phenomenon in MOS Devices
|
DhiaElhak Messaoud,
|
|
|
|
5 |
p. 439-468
|
artikel
|
| 15 |
Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
|
Kudrya, V. P.
|
|
2018
|
|
5 |
p. 332-343
|
artikel
|
| 16 |
Aspect-ratio-independent anisotropic silicon etching in a plasma chemical cyclic process
|
Morozov, O. V.
|
|
2007
|
|
5 |
p. 333-341
|
artikel
|
| 17 |
A table MOS transistor model parameter control
|
Denisenko, V. V.
|
|
2010
|
|
5 |
p. 352-365
|
artikel
|
| 18 |
A thermodynamic model of the influence of atomic impurities on the adhesion strength of interfaces
|
Alekseev, I. M.
|
|
2011
|
|
5 |
p. 303-308
|
artikel
|
| 19 |
Automation of Pulse Electric Strength Test of Electronic Component Base
|
Dyatlov, N. S.
|
|
2019
|
|
5 |
p. 340-345
|
artikel
|
| 20 |
Borophosphosilicate Glass Films in Silicon Microelectronics, Part 1: Chemical Vapor Deposition, Composition, and Properties
|
V. Y. Vasilev
|
|
2004
|
|
5 |
p. 271-284
14 p.
|
artikel
|
| 21 |
Borophosphosilicate Glass Films in Silicon Microelectronics, Part 1: Chemical Vapor Deposition, Composition, and Properties
|
Vasilev, V. Y.
|
|
2004
|
|
5 |
p. 271-284
|
artikel
|
| 22 |
Chaotic Solid-State Oscillators of High Spectral Stability with a Wideband Negative-Differential-Resistance Subsystem
|
V. G. Prokopenko
|
|
2003
|
|
5 |
p. 301-306
6 p.
|
artikel
|
| 23 |
Chaotic Solid-State Oscillators of High Spectral Stability with a Wideband Negative-Differential-Resistance Subsystem
|
Prokopenko, V. G.
|
|
2003
|
|
5 |
p. 301-306
|
artikel
|
| 24 |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
|
E. M. Pashaev
|
|
2002
|
|
5 |
p. 310-317
8 p.
|
artikel
|
| 25 |
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
|
Pashaev, E. M.
|
|
2002
|
|
5 |
p. 310-317
|
artikel
|
| 26 |
Charge transfer and structural—impurity complexes in the transition layer of the Si/SiO2 system
|
Krasnikov, G. Ya.
|
|
|
|
5 |
p. 307-310
|
artikel
|
| 27 |
Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
|
Orlov, O. M.
|
|
2016
|
|
5 |
p. 350-356
|
artikel
|
| 28 |
Charge Transport Mechanism in a Formless Memristor Based on Silicon Nitride
|
Orlov, O. M.
|
|
|
|
5 |
p. 372-377
|
artikel
|
| 29 |
Chip training conditions
|
Gorlov, M. I.
|
|
|
|
5 |
p. 349-353
|
artikel
|
| 30 |
Coatings of contact areas of crystals and the traverse of packages for microwelding of internal outputs of 3D wares
|
Zenin, V. V.
|
|
2013
|
|
5 |
p. 288-300
|
artikel
|
| 31 |
Combined two-band models of resonant tunneling diodes
|
Abramov, I. I.
|
|
2012
|
|
5 |
p. 314-323
|
artikel
|
| 32 |
Commemorating Vladimir G. Mokerov: The 70th anniversary of his birth
|
|
|
2010
|
|
5 |
p. 299-302
|
artikel
|
| 33 |
Comparative Study of an RF and a Microwave High-Density-Plasma Source for Plasma Immersion Ion Implantation
|
S. N. Averkin
|
|
2003
|
|
5 |
p. 292-300
9 p.
|
artikel
|
| 34 |
Comparative Study of an RF and a Microwave High-Density-Plasma Source for Plasma Immersion Ion Implantation
|
Averkin, S. N.
|
|
2003
|
|
5 |
p. 292-300
|
artikel
|
| 35 |
Computer Investigation of the Influence of Metal Contact Inhomogenees on Resistive Switching in a Heterostructure Based on Bismuth Selenide
|
Sirotkin, V. V.
|
|
|
|
5 |
p. 326-332
|
artikel
|
| 36 |
Controlling Electrical Transport through Bundles of Single-Wall Carbon Nanotubes
|
I. I. Bobrinetskii
|
|
2004
|
|
5 |
p. 292-297
6 p.
|
artikel
|
| 37 |
Controlling Electrical Transport through Bundles of Single-Wall Carbon Nanotubes
|
Bobrinetskii, I. I.
|
|
2004
|
|
5 |
p. 292-297
|
artikel
|
| 38 |
Control of the adhesion strength of thin metal films in multilayer structures
|
Taliashvili, Z. I.
|
|
2007
|
|
5 |
p. 313-320
|
artikel
|
| 39 |
Custom Logic: A Toolkit for the Design of VLSI Custom Control MOS Logic
|
P. N. Bibilo
|
|
2004
|
|
5 |
p. 310-327
18 p.
|
artikel
|
| 40 |
Custom Logic: A Toolkit for the Design of VLSI Custom Control MOS Logic
|
Bibilo, P. N.
|
|
2004
|
|
5 |
p. 310-327
|
artikel
|
| 41 |
Decimation filter of the delta-sigma analog-to-digital converter with ternary data encoding
|
Morozov, D. V.
|
|
2011
|
|
5 |
p. 352-360
|
artikel
|
| 42 |
Deep-Level Effects in GaAs Microelectronics: A Review
|
N. P. Khuchua
|
|
2003
|
|
5 |
p. 257-274
18 p.
|
artikel
|
| 43 |
Deep-Level Effects in GaAs Microelectronics: A Review
|
Khuchua, N. P.
|
|
2003
|
|
5 |
p. 257-274
|
artikel
|
| 44 |
Deposition of Nanoscale Films with Fractal Topography
|
I. N. Serov
|
|
2004
|
|
5 |
p. 263-270
8 p.
|
artikel
|
| 45 |
Deposition of Nanoscale Films with Fractal Topography
|
Serov, I. N.
|
|
2004
|
|
5 |
p. 263-270
|
artikel
|
| 46 |
Design of a Thin-Film Thermoelectric Generator for Low-Power Applications
|
Korotkov, A. S.
|
|
2019
|
|
5 |
p. 326-334
|
artikel
|
| 47 |
Determination of the probability of the heterogeneous recombination of chlorine atoms on the construction materials of plasma chemical reactors
|
Iventichev, M. Yu.
|
|
2011
|
|
5 |
p. 316-320
|
artikel
|
| 48 |
Deterministic and nondeterministic failure models of LSI circuits exposed to radiation
|
Barbashov, V. M.
|
|
2015
|
|
5 |
p. 312-315
|
artikel
|
| 49 |
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
|
E. I. Cherepov
|
|
2002
|
|
5 |
p. 277-281
5 p.
|
artikel
|
| 50 |
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
|
Cherepov, E. I.
|
|
2002
|
|
5 |
p. 277-281
|
artikel
|
| 51 |
Discrete electron states at the Si(100)/SiO2 interface
|
Kirillova, S. I.
|
|
|
|
5 |
p. 345-348
|
artikel
|
| 52 |
Dynamic model of a memory cell based on tunnel magnetoresistance
|
Kostrov, A. I.
|
|
2011
|
|
5 |
p. 361-368
|
artikel
|
| 53 |
Effect of additions of Ar and He on the parameters and composition of the HBr plasma
|
Smirnov, A. A.
|
|
2010
|
|
5 |
p. 366-375
|
artikel
|
| 54 |
Effect of barrier-layer deposition conditions on reliability of on-chip wiring
|
Emel’yanov, A. V.
|
|
2011
|
|
5 |
p. 321-325
|
artikel
|
| 55 |
Effect of diamond dicing of SiC device wafers on the technical and operational parameters of monolithic integrated circuits
|
Gamkrelidze, S. A.
|
|
2017
|
|
5 |
p. 323-328
|
artikel
|
| 56 |
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
|
V. A. Goryachev
|
|
2002
|
|
5 |
p. 326-334
9 p.
|
artikel
|
| 57 |
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
|
Goryachev, V. A.
|
|
2002
|
|
5 |
p. 326-334
|
artikel
|
| 58 |
Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures
|
Mordvintsev, V. M.
|
|
|
|
5 |
p. 419-428
|
artikel
|
| 59 |
Effect of the reflection coefficients on the conductivity of a thin metal layer in the case of an inhomogeneous time-periodic electric field
|
Utkin, A. I.
|
|
2016
|
|
5 |
p. 357-366
|
artikel
|
| 60 |
Efficient control over heat transfer and hydrodynamics in closed regions due to optimal selection of materials for enclosure walls and external heat load
|
Kuznetsov, G. V.
|
|
2011
|
|
5 |
p. 326-332
|
artikel
|
| 61 |
Electrical parameters and concentrations of charged particles in methane plasma
|
Semenova, O. A.
|
|
2013
|
|
5 |
p. 301-308
|
artikel
|
| 62 |
Electrode geometry as dependent on electrolyte temperature in thick Cu film electrodeposition for making tunnel multilayer structures
|
Jangidze, L. B.
|
|
2008
|
|
5 |
p. 322-326
|
artikel
|
| 63 |
Electroforming of Si/SiO2/W Structures with an Exposed Nanometer-Thick SiO2Layer
|
V. M. Mordvintsev
|
|
2001
|
|
5 |
p. 303-311
9 p.
|
artikel
|
| 64 |
Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer
|
Mordvintsev, V. M.
|
|
2001
|
|
5 |
p. 303-311
|
artikel
|
| 65 |
Electrolyte hydrodynamics in anodic alumina pores
|
Sokol, V. A.
|
|
2014
|
|
5 |
p. 358-360
|
artikel
|
| 66 |
Electron-Beam Two-Stream Instability in Quantum-Effect Structures
|
A. E. Dubinov
|
|
2001
|
|
5 |
p. 339-341
3 p.
|
artikel
|
| 67 |
Electron-Beam Two-Stream Instability in Quantum-Effect Structures
|
Dubinov, A. E.
|
|
2001
|
|
5 |
p. 339-341
|
artikel
|
| 68 |
Electron distribution density in a low voltage SEM probe
|
Novikov, Yu. A.
|
|
2014
|
|
5 |
p. 361-370
|
artikel
|
| 69 |
Electron-optical properties of charged conical dielectric rings
|
Zhukov, V. A.
|
|
2012
|
|
5 |
p. 299-309
|
artikel
|
| 70 |
Electrophysical parameters and concentrations of active particles in the plasma of HCl mixtures with inert and molecular gases
|
Dunaev, A. V.
|
|
2014
|
|
5 |
p. 352-357
|
artikel
|
| 71 |
Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane
|
Murin, D. B.
|
|
|
|
5 |
p. 337-343
|
artikel
|
| 72 |
Energy and Noise Characteristics of a SEPIC/CuK Converter with Bipolar Output
|
Babenko, V. P.
|
|
|
|
5 |
p. 357-363
|
artikel
|
| 73 |
Engineering Approach to CMOS-Logic Optimization Allowing for Internal Capacitances and On-Chip Interconnections
|
Butuzov, A. V.
|
|
2005
|
|
5 |
p. 328-338
|
artikel
|
| 74 |
Erratum to: Application of the Tikhonov Regularization Method in Problems of Ellipsometic Porometry of Low-K Dielectrics
|
Gaidukasov, R. A.
|
|
|
|
5 |
p. 358
|
artikel
|
| 75 |
Error-correction coding in CMOS RAM resistant to the effect of single nuclear particles
|
Petrov, K. A.
|
|
2015
|
|
5 |
p. 316-323
|
artikel
|
| 76 |
ESR Study of P-doped, Zn-compensated Si Single Crystals
|
Dobryakov, S. N.
|
|
2005
|
|
5 |
p. 325-327
|
artikel
|
| 77 |
Experimental diamond photonics: Current state and prospects. Part I
|
Tsukanov, A. V.
|
|
2016
|
|
5 |
p. 299-313
|
artikel
|
| 78 |
Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etching
|
Amirov, I. I.
|
|
|
|
5 |
p. 311-315
|
artikel
|
| 79 |
Features of the Architecture Implementing the Dataflow Computational Model and Its Application in the Creation of Microelectronic High-Performance Computing Systems
|
Zmeev, D. N.
|
|
2019
|
|
5 |
p. 292-298
|
artikel
|
| 80 |
Features of the Operation of a Three-Electrode Electrostatic Microgenerator in the Presence of Collisions between Electrodes
|
Dragunov, V. P.
|
|
|
|
5 |
p. 334-348
|
artikel
|
| 81 |
Formal Description of Digital Control System Operation and Its Use in Designing
|
Stempkovsky, A. L.
|
|
2019
|
|
5 |
p. 318-325
|
artikel
|
| 82 |
Formation of local insulating regions in Si/Si—Ge structures by ion implantation with subsequent stain etching
|
Starkov, V. V.
|
|
|
|
5 |
p. 294-298
|
artikel
|
| 83 |
Frequency characteristics of a broadband submicron SOI-based photonic phase modulator
|
Masal’skii, N. V.
|
|
2014
|
|
5 |
p. 371-376
|
artikel
|
| 84 |
Frequency-response equalization in integrated current amplifiers with collector—base cross coupling
|
Prokopenko, V. G.
|
|
|
|
5 |
p. 299-302
|
artikel
|
| 85 |
Functional Properties and Frequency Characteristics of Low-Sensitive RC Filters Based on Micropower Operational Amplifiers
|
Denisenko, D. Yu.
|
|
2019
|
|
5 |
p. 299-309
|
artikel
|
| 86 |
GaAs/AlAs resonant-tunneling diode for subharmonic mixers
|
Alkeev, N. V.
|
|
2010
|
|
5 |
p. 331-339
|
artikel
|
| 87 |
Generation of fast neutral beams based on closed drift ion sources
|
Maishev, Yu. P.
|
|
2014
|
|
5 |
p. 345-351
|
artikel
|
| 88 |
High-speed, high-resolution analog-to-digital converter with prediction
|
Volkov, I. V.
|
|
2011
|
|
5 |
p. 343-351
|
artikel
|
| 89 |
Implementation of a Two-Qubit C-NOT Quantum Gate in a System of Two Double Quantum Dots, a Microcavity, and a Laser
|
Tsukanov, A. V.
|
|
2018
|
|
5 |
p. 279-289
|
artikel
|
| 90 |
Implementation of Interpolation in Read-out ASIC for GEM Detectors
|
Shumikhin, V. V.
|
|
|
|
5 |
p. 353-356
|
artikel
|
| 91 |
In Celebration of Tatevos M. Agakhanyan's 80th Birthday
|
|
|
2004
|
|
5 |
p. 261-262
2 p.
|
artikel
|
| 92 |
In Celebration of Tatevos M. Agakhanyan's 80th Birthday
|
|
|
2004
|
|
5 |
p. 261-262
|
artikel
|
| 93 |
Incoming Control of Solid-State Parts: A Review
|
M. I. Gorlov
|
|
2003
|
|
5 |
p. 315-321
7 p.
|
artikel
|
| 94 |
Incoming Control of Solid-State Parts: A Review
|
Gorlov, M. I.
|
|
2003
|
|
5 |
p. 315-321
|
artikel
|
| 95 |
Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region
|
Novoselov, A. S.
|
|
|
|
5 |
p. 411-418
|
artikel
|
| 96 |
Influence of metallization impedance on the current distribution along the conducting tracks from a FET operated in saturation
|
Sergeev, V. A.
|
|
2008
|
|
5 |
p. 327-333
|
artikel
|
| 97 |
Influence of Point Defects on the Initiation of Electromigration in an Impurity Conductor
|
Makhviladze, T. M.
|
|
|
|
5 |
p. 339-346
|
artikel
|
| 98 |
Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures
|
Mordvintsev, V. M.
|
|
2010
|
|
5 |
p. 313-322
|
artikel
|
| 99 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III
|
A. A. Orlikovskii
|
|
2001
|
|
5 |
p. 275-294
20 p.
|
artikel
|
| 100 |
In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III
|
Orlikovskii, A. A.
|
|
2001
|
|
5 |
p. 275-294
|
artikel
|
| 101 |
Instability Conditions of the Stationary Nonconducting State for the Bispin
|
A. P. Lysenko
|
|
2002
|
|
5 |
p. 335-339
5 p.
|
artikel
|
| 102 |
Instability Conditions of the Stationary Nonconducting State for the Bispin
|
Lysenko, A. P.
|
|
2002
|
|
5 |
p. 335-339
|
artikel
|
| 103 |
Installation for etching and deposition of thin-film structures by a fast neutral particle beam
|
Maishev, Yu. P.
|
|
2015
|
|
5 |
p. 304-311
|
artikel
|
| 104 |
Investigation into the statistical nature of Bell’s inequalities
|
Bogdanov, Yu. I.
|
|
2008
|
|
5 |
p. 308-321
|
artikel
|
| 105 |
Investigation of a Capacitor Array of a Composite Capacitive Touch Panel
|
Vlasov, A. I.
|
|
2018
|
|
5 |
p. 299-306
|
artikel
|
| 106 |
Investigation of Characteristics of Electrostatically Actuated MEMS Switch with an Active Contact Breaking Mechanism
|
Uvarov, I. V.
|
|
2018
|
|
5 |
p. 307-316
|
artikel
|
| 107 |
Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology
|
Orlov, O. M.
|
|
2017
|
|
5 |
p. 353-358
|
artikel
|
| 108 |
Investigation of the Process of Plasma Through Etching of HkMG Stack of Nanotransistor with a 32-nm Critical Dimension
|
Myakonkikh, A. V.
|
|
2018
|
|
5 |
p. 323-331
|
artikel
|
| 109 |
Investigation of the Thermophysical Properties of the SiGe Semiconductor Material
|
Shorstov, S. Yu.
|
|
|
|
5 |
p. 295-301
|
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