| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Abruptly terminated planar left-handed material waveguide
|
Manenkov, A. B.
|
|
2013
|
45 |
6 |
p. 529-541
|
artikel
|
| 2 |
A reliable wavelength division multiplexing metro-access network realizing crosstalk-free transmission between uplink and downlink
|
Wu, Chenwei
|
|
2013
|
45 |
6 |
p. 549-561
|
artikel
|
| 3 |
Focal shift in radially polarized beam with high NA lens axicon by using radial cosine phase wavefront
|
Prabakaran, K.
|
|
2013
|
45 |
6 |
p. 563-570
|
artikel
|
| 4 |
NOR gate based on QD-SOA at 250 Gbit/s
|
Kotb, Amer
|
|
2013
|
45 |
6 |
p. 473-480
|
artikel
|
| 5 |
Optical properties of nano-multi-layered quantum dot: oscillator strength, absorption coefficient and refractive index
|
Jafari, A. R.
|
|
2013
|
45 |
6 |
p. 517-527
|
artikel
|
| 6 |
Simplified back-propagation for fibre nonlinearity compensation employing multi-band OFDM signals
|
Pessoa, L. M.
|
|
2013
|
45 |
6 |
p. 491-502
|
artikel
|
| 7 |
Slotted microcavity ring resonators for optical storage applications
|
Abujnah, Nabeil A.
|
|
2013
|
45 |
6 |
p. 503-515
|
artikel
|
| 8 |
Surface plasmon propagation in a metal strip waveguide with biaxial substrate
|
Babu, Anju
|
|
2013
|
45 |
6 |
p. 481-490
|
artikel
|
| 9 |
Transient characteristics of the InGaP–GaAs–InGaAs–GaAs transistor laser
|
Habib, Md Ahsan
|
|
2013
|
45 |
6 |
p. 543-547
|
artikel
|
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