| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Dissolution and crystallization of KTiOPO4 in the flux system of K6P4O13
|
C Chen
|
|
1998
|
9 |
3 |
p. 255-260
6 p.
|
artikel
|
| 2 |
Dissolution and crystallization of KTiOPO4 in the flux system of K6P4O13
|
Chen, C
|
|
1998
|
9 |
3 |
p. 255-260
|
artikel
|
| 3 |
Growth and characterization of ZnSe based blue green VCSELs
|
K. A Prior
|
|
1998
|
9 |
3 |
p. 181-186
6 p.
|
artikel
|
| 4 |
Growth and characterization of ZnSe based blue green VCSELs
|
Prior, K. A
|
|
1998
|
9 |
3 |
p. 181-186
|
artikel
|
| 5 |
Growth mode issues in epitaxy of complex oxide thin films
|
B Dam
|
|
1998
|
9 |
3 |
p. 217-226
10 p.
|
artikel
|
| 6 |
Growth mode issues in epitaxy of complex oxide thin films
|
Dam, B
|
|
1998
|
9 |
3 |
p. 217-226
|
artikel
|
| 7 |
Growth of MgS by MOVPE: the choice of sulphur precursor
|
L. D Stockton
|
|
1998
|
9 |
3 |
p. 207-210
4 p.
|
artikel
|
| 8 |
Growth of MgS by MOVPE: the choice of sulphur precursor
|
Stockton, L. D
|
|
1998
|
9 |
3 |
p. 207-210
|
artikel
|
| 9 |
Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices
|
A. P Samantilleke
|
|
1998
|
9 |
3 |
p. 231-235
5 p.
|
artikel
|
| 10 |
Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices
|
Samantilleke, A. P
|
|
1998
|
9 |
3 |
p. 231-235
|
artikel
|
| 11 |
Recent developments in the growth and characterization of potassium lithium niobate (KLN) crystals for direct doubling of semiconductor lasers
|
Q Jiang
|
|
1998
|
9 |
3 |
p. 193-197
5 p.
|
artikel
|
| 12 |
Recent developments in the growth and characterization of potassium lithium niobate (KLN) crystals for direct doubling of semiconductor lasers
|
Jiang, Q
|
|
1998
|
9 |
3 |
p. 193-197
|
artikel
|
| 13 |
StranskiKrastanow self-organized growth of nano-scale ZnTe islands on (0 0 1)GaAs by metalorganic vapour phase epitaxy
|
N Lovergine
|
|
1998
|
9 |
3 |
p. 249-253
5 p.
|
artikel
|
| 14 |
Stranski–Krastanow self-organized growth of nano-scale ZnTe islands on (0 0 1)GaAs by metalorganic vapour phase epitaxy
|
Lovergine, N
|
|
1998
|
9 |
3 |
p. 249-253
|
artikel
|
| 15 |
Systematic studies of impurities and nitrogen doping of photo-assisted MOVPE grown ZnSe using DESe, DMZn, TEN and TMSiN3
|
P Prete
|
|
1998
|
9 |
3 |
p. 211-216
6 p.
|
artikel
|
| 16 |
Systematic studies of impurities and nitrogen doping of photo-assisted MOVPE grown ZnSe using DESe, DMZn, TEN and TMSiN3
|
Prete, P
|
|
1998
|
9 |
3 |
p. 211-216
|
artikel
|
| 17 |
The current status of plasma assisted MBE growth of group III-nitrides
|
C. T Foxon
|
|
1998
|
9 |
3 |
p. 227-230
4 p.
|
artikel
|
| 18 |
The current status of plasma assisted MBE growth of group III-nitrides
|
Foxon, C. T
|
|
1998
|
9 |
3 |
p. 227-230
|
artikel
|
| 19 |
The selection of substrates for the heteroepitaxy of high-gap semiconductors
|
P. M Dryburgh
|
|
1998
|
9 |
3 |
p. 237-248
12 p.
|
artikel
|
| 20 |
The selection of substrates for the heteroepitaxy of high-gap semiconductors
|
Dryburgh, P. M
|
|
1998
|
9 |
3 |
p. 237-248
|
artikel
|
| 21 |
Thin film ferroelectrics for capacitor applications
|
D Oneill
|
|
1998
|
9 |
3 |
p. 199-205
7 p.
|
artikel
|
| 22 |
Thin film ferroelectrics for capacitor applications
|
O'neill, D
|
|
1998
|
9 |
3 |
p. 199-205
|
artikel
|
| 23 |
VO2 thin films: growth and the effect of applied strain on their resistance
|
R. M Bowman
|
|
1998
|
9 |
3 |
p. 187-191
5 p.
|
artikel
|
| 24 |
VO2 thin films: growth and the effect of applied strain on their resistance
|
Bowman, R. M
|
|
1998
|
9 |
3 |
p. 187-191
|
artikel
|
Tijdschrift beschrijving