| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Diffusion of mercury into for HgxCd(1-x)Te 0x0.03
|
M. U AHMED
|
|
1997
|
8 |
5 |
p. 333-336
4 p.
|
artikel
|
| 2 |
Diffusion of mercury into for HgxCd(1-x)Te 0≤x≤0.03
|
AHMED , M. U
|
|
1997
|
8 |
5 |
p. 333-336
|
artikel
|
| 3 |
Effect of film thickness and curing temperature on the sensitivity of ZnO:Sb thick-film hydrogen sensor
|
N. JAYADEV DAYAN
|
|
1997
|
8 |
5 |
p. 277-279
3 p.
|
artikel
|
| 4 |
Effect of film thickness and curing temperature on the sensitivity of ZnO:Sb thick-film hydrogen sensor
|
DAYAN , N. JAYADEV
|
|
1997
|
8 |
5 |
p. 277-279
|
artikel
|
| 5 |
Gas-sensor properties of SnO2 films implanted with gold and iron ions
|
NOMURA , K
|
|
|
8 |
5 |
p. 301-306
|
artikel
|
| 6 |
Gas-sensor properties of SnO2 films implanted with gold and iron ions
|
K NOMURA
|
|
1997
|
8 |
5 |
p. 301-306
6 p.
|
artikel
|
| 7 |
Gas-sensor properties of SnO2 films implanted with gold and iron ions
|
NOMURA , K
|
|
1997
|
8 |
5 |
p. 301-306
|
artikel
|
| 8 |
Hardness, elastic modulus and structure of indium nitride thin films on AlN-nucleated sapphire substrates
|
J. H EDGAR
|
|
1997
|
8 |
5 |
p. 307-312
6 p.
|
artikel
|
| 9 |
Hardness, elastic modulus and structure of indium nitride thin films on AlN-nucleated sapphire substrates
|
EDGAR , J. H
|
|
1997
|
8 |
5 |
p. 307-312
|
artikel
|
| 10 |
Microstructural analysis of Pd/Pt/Au/Pd ohmic contacts to InGaP/GaAs
|
D. G IVEY
|
|
1997
|
8 |
5 |
p. 281-288
8 p.
|
artikel
|
| 11 |
Microstructural analysis of Pd/Pt/Au/Pd ohmic contacts to InGaP/GaAs
|
IVEY , D. G
|
|
1997
|
8 |
5 |
p. 281-288
|
artikel
|
| 12 |
Non-uniform distribution of polarization in Pb0.76Ca0.24(Co0.5W0.5)0.05Ti0.95O3 ceramics produced by defects
|
DE FRUTOS , J
|
|
|
8 |
5 |
p. 327-331
|
artikel
|
| 13 |
Non-uniform distribution of polarization in Pb0.76Ca0.24(Co0.5W0.5)0.05Ti0.95O3 ceramics produced by defects
|
J DE FRUTOS
|
|
1997
|
8 |
5 |
p. 327-331
5 p.
|
artikel
|
| 14 |
Non-uniform distribution of polarization in Pb0.76Ca0.24(Co0.5W0.5)0.05Ti0.95O3 ceramics produced by defects
|
DE FRUTOS , J
|
|
1997
|
8 |
5 |
p. 327-331
|
artikel
|
| 15 |
Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
|
TSAI , WEN-CHOU
|
|
|
8 |
5 |
p. 313-320
|
artikel
|
| 16 |
Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
|
WEN-CHOU TSAI
|
|
1997
|
8 |
5 |
p. 313-320
8 p.
|
artikel
|
| 17 |
Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering
|
TSAI , WEN-CHOU
|
|
1997
|
8 |
5 |
p. 313-320
|
artikel
|
| 18 |
Thick-layer growth of n+ silicon on n- silicon substrate by liquid-phase epitaxy
|
M SAITOU
|
|
1997
|
8 |
5 |
p. 321-325
5 p.
|
artikel
|
| 19 |
Thick-layer growth of n+ silicon on n- silicon substrate by liquid-phase epitaxy
|
SAITOU , M
|
|
1997
|
8 |
5 |
p. 321-325
|
artikel
|
| 20 |
Thickness modulation in symmetrically strained III–V semiconductor superlattices grown by MOVPE
|
JIN-PHILLIPP , N. Y
|
|
|
8 |
5 |
p. 289-299
|
artikel
|
| 21 |
Thickness modulation in symmetrically strained IIIV semiconductor superlattices grown by MOVPE
|
N. Y JIN-PHILLIPP
|
|
1997
|
8 |
5 |
p. 289-299
11 p.
|
artikel
|
| 22 |
Thickness modulation in symmetrically strained III–V semiconductor superlattices grown by MOVPE
|
JIN-PHILLIPP , N. Y
|
|
1997
|
8 |
5 |
p. 289-299
|
artikel
|
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