| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Adaptive quadrature for sharply spiked integrands
|
Agarwal, Samarth
|
|
2010
|
9 |
3-4 |
p. 252-255
|
artikel
|
| 2 |
An advanced description of oxide traps in MOS transistors and its relation to DFT
|
Schanovsky, F.
|
|
2010
|
9 |
3-4 |
p. 135-140
|
artikel
|
| 3 |
An effective potential approach to modeling 25 nm MOSFET devices
|
Ahmed, S.
|
|
2010
|
9 |
3-4 |
p. 197-200
|
artikel
|
| 4 |
A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green function simulation of nano-devices
|
Barker, John R.
|
|
2010
|
9 |
3-4 |
p. 243-251
|
artikel
|
| 5 |
Application of the R-matrix method in quantum transport simulations
|
Mil’nikov, Gennady
|
|
2010
|
9 |
3-4 |
p. 256-261
|
artikel
|
| 6 |
A semiclassical transport model for quantum cascade lasers based on the Pauli master equation
|
Milovanovic, G.
|
|
2010
|
9 |
3-4 |
p. 211-217
|
artikel
|
| 7 |
Compact model and circuit simulations for asymmetric, independent gate FinFETs
|
Dessai, Gajanan
|
|
2010
|
9 |
3-4 |
p. 103-107
|
artikel
|
| 8 |
Concurrent multiscale simulation of electronic devices
|
Maur, M. Auf der
|
|
2010
|
9 |
3-4 |
p. 262-268
|
artikel
|
| 9 |
Device modeling in the Wigner picture
|
Nedjalkov, M.
|
|
2010
|
9 |
3-4 |
p. 218-223
|
artikel
|
| 10 |
1/f Noise: threshold voltage and ON-current fluctuations in 45 nm device technology due to charged random traps
|
Ashraf, Nabil
|
|
2010
|
9 |
3-4 |
p. 128-134
|
artikel
|
| 11 |
Impact of RDF and RTS on the performance of SRAM cells
|
Camargo, Vinícius V. A.
|
|
2010
|
9 |
3-4 |
p. 122-127
|
artikel
|
| 12 |
Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation
|
Querlioz, Damien
|
|
2010
|
9 |
3-4 |
p. 224-231
|
artikel
|
| 13 |
Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion
|
Hong, Sung-Min
|
|
2010
|
9 |
3-4 |
p. 153-159
|
artikel
|
| 14 |
Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires
|
Paul, Abhijeet
|
|
2010
|
9 |
3-4 |
p. 160-172
|
artikel
|
| 15 |
Pseudo-two-dimensional Poisson equation for the modeling of field-effect transistors
|
Marinchio, Hugues
|
|
2010
|
9 |
3-4 |
p. 141-145
|
artikel
|
| 16 |
Random variability modeling and its impact on scaled CMOS circuits
|
Ye, Yun
|
|
2010
|
9 |
3-4 |
p. 108-113
|
artikel
|
| 17 |
Scattering matrix approach to direct solution of the Schrödinger equation
|
Akis, R.
|
|
2010
|
9 |
3-4 |
p. 232-236
|
artikel
|
| 18 |
Schrödinger-equation-based quantum corrections addressing degeneracy-breaking and confinement-enhanced scattering
|
Register, Leonard F.
|
|
2010
|
9 |
3-4 |
p. 201-205
|
artikel
|
| 19 |
Self-consistent Poisson-Schrödinger-Monte Carlo solver: electron mobility in silicon nanowires
|
Ramayya, E. B.
|
|
2010
|
9 |
3-4 |
p. 206-210
|
artikel
|
| 20 |
Statistical analysis of hold time violations
|
Brusamarello, Lucas
|
|
2010
|
9 |
3-4 |
p. 114-121
|
artikel
|
| 21 |
Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique
|
Makarov, Alexander
|
|
2010
|
9 |
3-4 |
p. 146-152
|
artikel
|
| 22 |
The non-equilibrium Green’s function method: an introduction
|
Vogl, P.
|
|
2010
|
9 |
3-4 |
p. 237-242
|
artikel
|
| 23 |
Thermoelectric properties of silicon nanostructures
|
Aksamija, Z.
|
|
2010
|
9 |
3-4 |
p. 173-179
|
artikel
|
| 24 |
The role of the source and drain contacts on self-heating effect in nanowire transistors
|
Vasileska, D.
|
|
2010
|
9 |
3-4 |
p. 180-186
|
artikel
|
| 25 |
Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
|
Brown, Andrew R.
|
|
2010
|
9 |
3-4 |
p. 187-196
|
artikel
|
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