| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
|
Hong, S.-M.
|
|
2009
|
8 |
3-4 |
p. 225-241
|
artikel
|
| 2 |
A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs
|
Afzalian, Aryan
|
|
2009
|
8 |
3-4 |
p. 287-306
|
artikel
|
| 3 |
An investigation of performance limits of conventional and tunneling graphene-based transistors
|
Grassi, R.
|
|
2009
|
8 |
3-4 |
p. 441-450
|
artikel
|
| 4 |
Ballistic quantum transport using the contact block reduction (CBR) method
|
Birner, Stefan
|
|
2009
|
8 |
3-4 |
p. 267-286
|
artikel
|
| 5 |
Comprehensive modeling of optoelectronic nanostructures
|
Witzigmann, Bernd
|
|
2009
|
8 |
3-4 |
p. 389-397
|
artikel
|
| 6 |
Computational study of carbon-based electronics
|
Pourfath, Mahdi
|
|
2009
|
8 |
3-4 |
p. 427-440
|
artikel
|
| 7 |
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs
|
Pala, Marco G.
|
|
2009
|
8 |
3-4 |
p. 374-381
|
artikel
|
| 8 |
Guest editorial
|
|
|
2009
|
8 |
3-4 |
p. 173
|
artikel
|
| 9 |
Modeling drive currents and leakage currents: a dynamic approach
|
Magnus, Wim
|
|
2009
|
8 |
3-4 |
p. 307-323
|
artikel
|
| 10 |
Modeling of circuits and architectures for molecular electronics
|
Lugli, Paolo
|
|
2009
|
8 |
3-4 |
p. 410-426
|
artikel
|
| 11 |
Modeling of Dye sensitized solar cells using a finite element method
|
Gagliardi, Alessio
|
|
2009
|
8 |
3-4 |
p. 398-409
|
artikel
|
| 12 |
Modeling of modern MOSFETs with strain
|
Sverdlov, V.
|
|
2009
|
8 |
3-4 |
p. 192-208
|
artikel
|
| 13 |
Monte Carlo simulation of nanoelectronic devices
|
Gamiz, F.
|
|
2009
|
8 |
3-4 |
p. 174-191
|
artikel
|
| 14 |
Nanowire transistor modeling: influence of ionized impurity and correlation effects
|
Bescond, Marc
|
|
2009
|
8 |
3-4 |
p. 382-388
|
artikel
|
| 15 |
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs
|
Pham, Anh-Tuan
|
|
2009
|
8 |
3-4 |
p. 242-266
|
artikel
|
| 16 |
Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires
|
Esposito, Aniello
|
|
2009
|
8 |
3-4 |
p. 336-348
|
artikel
|
| 17 |
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering
|
Esseni, D.
|
|
2009
|
8 |
3-4 |
p. 209-224
|
artikel
|
| 18 |
Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques
|
Asenov, Asen
|
|
2009
|
8 |
3-4 |
p. 349-373
|
artikel
|
| 19 |
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport
|
Querlioz, Damien
|
|
2009
|
8 |
3-4 |
p. 324-335
|
artikel
|
Tijdschrift beschrijving