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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
7 results found
| no | title | author | magazine | year | volume | issue | page(s) | type |
| 1 | An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations |
Heitzinger, Clemens |
2007 |
6 | 4 |
p. 401-408 |
article |
|
| 2 | Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs |
Kumar, M. Jagadesh |
2007 |
6 | 4 |
p. 439-444 |
article |
|
| 3 | Drain temperature determination in dual-gate GaAs MESFETs |
Kameche, M. |
2007 |
6 | 4 |
p. 421-424 |
article |
|
| 4 | Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model |
Shah, Deep |
2007 |
6 | 4 |
p. 395-400 |
article |
|
| 5 | Engineering model of a biased metal–molecule–metal junction |
Caussanel, Matthieu |
2007 |
6 | 4 |
p. 425-430 |
article |
|
| 6 | Inverse dopant profiling from transient measurements |
Wolfram, M.-T. |
2007 |
6 | 4 |
p. 409-420 |
article |
|
| 7 | Modeling and simulation of silicon neuron-to-ISFET junction |
Massobrio, Giuseppe |
2007 |
6 | 4 |
p. 431-437 |
article |
7 results found