nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A design and modeling perspective on photostimulation of the subretinal prosthesis with graphene-based photodiodes
|
Asghar, Sharique Ali |
|
|
23 |
2 |
p. 418-432 |
artikel |
2 |
Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET
|
Mohanty, Sadhana Subhadarshini |
|
|
23 |
2 |
p. 244-256 |
artikel |
3 |
ANFIS-based impedance analysis of an infinite array of rectangular microstrip antennas
|
Kazemi, Mohammad Amin |
|
|
23 |
2 |
p. 341-347 |
artikel |
4 |
A piezoelectric sensor with high accuracy and reduced measurement error
|
Ghemari, Zine |
|
|
23 |
2 |
p. 448-455 |
artikel |
5 |
Characteristics prediction and optimization of InP HBT using machine learning
|
Jie, Xiao |
|
|
23 |
2 |
p. 305-313 |
artikel |
6 |
Circular/linear dichroism and anisotropy based on tunable terahertz metasurfaces
|
Wu, Rou-Lan |
|
|
23 |
2 |
p. 348-357 |
artikel |
7 |
CNT-based enhanced GaAs/InAs multiple quantum well solar cell
|
Warepam, Dickson |
|
|
23 |
2 |
p. 382-395 |
artikel |
8 |
Comment on: “Terahertz rectangular waveguides with inserted graphene films biased by light and their quasi-linear electromagnetic modeling” [J. Comput. Electron. 20 (2021) 169]
|
Moradi, Afshin |
|
|
23 |
2 |
p. 481-482 |
artikel |
9 |
Computational design of D-π-A dyes for improved photovoltaic performance: a DFT approach
|
Abdali, Saddam A. |
|
|
23 |
2 |
p. 209-223 |
artikel |
10 |
Correction: Revealing structural, elastic, optoelectronic and thermoelectric properties of lead-free Ba2XTiO6 (X = Hf, Ce, Te) double perovskite for solar cells applications
|
Shah, Ibrar Ali |
|
|
23 |
2 |
p. 407-417 |
artikel |
11 |
Design of a MIM sensor using an optical resonator and GMDH algorithm for high efficiency applications
|
Zonouri, Seyed Abed |
|
|
23 |
2 |
p. 467-480 |
artikel |
12 |
Flexible CNT/silicon piezo-resistive strain sensors geometrical influences on sensitivity for human motion detection
|
Ahmed, Syed Muzamil |
|
|
23 |
2 |
p. 456-466 |
artikel |
13 |
Novel analytical STFT expressions for nonlinear power engineering problem solving
|
Ćalasan, Martin |
|
|
23 |
2 |
p. 291-304 |
artikel |
14 |
Numerical analysis and performance study of a double-heterojunction GaAs-based solar cell
|
Al-Ezzi, Athil S. |
|
|
23 |
2 |
p. 358-368 |
artikel |
15 |
Numerical investigation of energy level strategy for TMO/Si tunneling heterojunction solar cells
|
Gao, Zhongliang |
|
|
23 |
2 |
p. 369-381 |
artikel |
16 |
On injection in intrinsic single-carrier devices
|
Röhr, Jason A. |
|
|
23 |
2 |
p. 224-232 |
artikel |
17 |
Oscillations of transverse magnetoresistance in the conduction band of quantum wells at different temperatures and magnetic fields
|
Erkaboev, U. I. |
|
|
23 |
2 |
p. 279-290 |
artikel |
18 |
Prefabrication design, theoretical framework and simulation demonstration of a meander-shaped MEMS piezoresistive pressure sensor implanted on silicon substrate circular diaphragm for enhancement of key performance parameters utilized for low-pressure applications
|
Kanekal, Dadasikandar |
|
|
23 |
2 |
p. 433-447 |
artikel |
19 |
Research on explosive electromagnetic field interference analysis based on field-circuit cooperated modeling and simulation
|
Yu, Danping |
|
|
23 |
2 |
p. 330-340 |
artikel |
20 |
Revealing structural, elastic, optoelectronic and thermoelectric properties of lead-free Ba2XTiO6 (X = Hf, Ce, Te) double perovskite for solar cells applications
|
Shah, Ibrar Ali |
|
|
23 |
2 |
p. 396-406 |
artikel |
21 |
Simulation of avalanche time in thin GaN/4H–SiC heterojunction avalanche photodiodes
|
Cheang, P. L. |
|
|
23 |
2 |
p. 314-329 |
artikel |
22 |
Small-signal non-quasi-static model of a multi-fin FinFET for analog and linearity analysis: the role of gate resistance
|
Patel, Jyoti |
|
|
23 |
2 |
p. 233-243 |
artikel |
23 |
Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs
|
Soares, C. S. |
|
|
23 |
2 |
p. 257-266 |
artikel |
24 |
Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node
|
Sanjay, |
|
|
23 |
2 |
p. 267-278 |
artikel |