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                             26 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A high-performance doping-less tunnel FET with pocketed architecture: proposal and analysis Haneef, Nazia

22 4 p. 954-963
artikel
2 Analytical modelling, simulation and comparative study of multi-junction (GaInP2/InGaAs/Ge) solar cell efficiency Al-Ezzi, Athil S.

22 4 p. 1048-1060
artikel
3 A novel design of graphene field-effect transistor-based out-phasing power amplifier Pooya, Mohsen

22 4 p. 1010-1023
artikel
4 Comment on the paper “Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragmbased static/dynamic pressure sensors, Timuçin Emre Tabaru, Şekip Esat Hayber, Journal of Computational Electronics, 2021, 20:643–657” Pantokratoras, Asterios

22 4 p. 1157-1158
artikel
5 Correction to: Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragm-based static/dynamic pressure sensors Tabaru, Timuçin Emre

22 4 p. 1159-1164
artikel
6 Correction to: Microwave coplanar band-stop filters based on electric-LC resonators: systematic numerical approach and experimental validation Aldrigo, Martino

22 4 p. 1037
artikel
7 Engineering the light absorption spectrum and electronic properties of black and blue phases of a SiSe monolayer via biaxial straining Behzad, Somayeh

22 4 p. 971-981
artikel
8 First principles investigation of transition metal hydrides LiXH3 (X = Ti, Mn, and Cu) for hydrogen storage Shah, Syed Farhan Ali

22 4 p. 921-929
artikel
9 Influence of carrier transport on modulation characteristics of quantum-well semiconductor lasers Ahmed, Moustafa

22 4 p. 1140-1150
artikel
10 Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability Swain, Sukanta Kumar

22 4 p. 990-998
artikel
11 Microwave coplanar band-stop filters based on electric-LC resonators: systematic numerical approach and experimental validation Aldrigo, Martino

22 4 p. 1031-1036
artikel
12 Nonlocalization of singular potentials in quantum dynamics Shao, Sihong

22 4 p. 930-945
artikel
13 Numerical analysis of emerging concept of perovskite/silicon heterojunction solar cells Kumar, Manoj

22 4 p. 1061-1074
artikel
14 Optimization of ultra-thin CIGS-based solar cells by strained In1−xGaxAs absorption layer: 1D SCAPS modeling Tarbi, A.

22 4 p. 1089-1096
artikel
15 Parameter extraction of photovoltaic module model by using Levenberg-Marquardt algorithm based on simulated annealing method Dkhichi, Fayrouz

22 4 p. 1128-1139
artikel
16 Polycrystalline silicon nanowire FET performance depending on density of states Demami, Fouad

22 4 p. 946-953
artikel
17 Predicting model of I–V characteristics of quantum-confined GaAs nanotube: a machine learning and DFT-based combined framework Roy, Debarati Dey

22 4 p. 999-1009
artikel
18 Prospects of graphene-based heat sink and its computational thermal analysis in avalanche transit time devices Ghivela, Girish Chandra

22 4 p. 982-989
artikel
19 Stepped graphene-covered plasmonic dipole antenna for detecting NO2 gas at mid-infrared frequencies Ghods, Mohammad Mahdi

22 4 p. 1038-1047
artikel
20 Study of bromine substitution on band gap broadening with consequent blue shift in optical properties and efficiency optimization of lead-free CsGeIXBr3−X based perovskite solar cells Sarkar, Joy

22 4 p. 1075-1088
artikel
21 The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement Kumar, Raushan

22 4 p. 1107-1127
artikel
22 Theoretical analysis of relative intensity noise in semiconductor QD lasers Babaabasi, Gholaam-Reza

22 4 p. 1097-1106
artikel
23 Thermally compensated ZnO film bulk acoustic resonator for RF application above 5GHz frequency Joshi, Poorvi K.

22 4 p. 1151-1156
artikel
24 Topological electronics: from infinity to six Wang, Frank Z.

22 4 p. 913-920
artikel
25 Transition metal induced-magnetization in zigzag SiCNTs Chauhan, Anurag

22 4 p. 964-970
artikel
26 Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer Dong, Kexiu

22 4 p. 1024-1030
artikel
                             26 gevonden resultaten
 
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