| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, In$$_3$$3SbTe$$_2$$2 and In$$_2$$2GeTe$$_3$$3 phase change compounds
|
Gabardi, S.
|
|
2017
|
16 |
4 |
p. 1003-1010
|
artikel
|
| 2 |
Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices
|
Zhong, Xiaoliang
|
|
2017
|
16 |
4 |
p. 1066-1076
|
artikel
|
| 3 |
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
|
Pešić, Milan
|
|
2017
|
16 |
4 |
p. 1236-1256
|
artikel
|
| 4 |
Comprehensive modeling of electrochemical metallization memory cells
|
Menzel, Stephan
|
|
2017
|
16 |
4 |
p. 1017-1037
|
artikel
|
| 5 |
Cross-point memory design challenges and survey of selector device characteristics
|
Peng, Xiaochen
|
|
2017
|
16 |
4 |
p. 1167-1174
|
artikel
|
| 6 |
Design rules for threshold switches based on a field triggered thermal runaway mechanism
|
Funck, Carsten
|
|
2017
|
16 |
4 |
p. 1175-1185
|
artikel
|
| 7 |
Filament-to-dielectric band alignments in $$\hbox {TiO}_{2}$$TiO2 and $$\hbox {HfO}_{2}$$HfO2 resistive RAMs
|
Wu, Ze-Han
|
|
2017
|
16 |
4 |
p. 1057-1065
|
artikel
|
| 8 |
From materials to systems: a multiscale analysis of nanomagnetic switching
|
Xie, Yunkun
|
|
2017
|
16 |
4 |
p. 1201-1226
|
artikel
|
| 9 |
General considerations and implications of isolated oxygen vacancies in oxide-based filamentary ReRAM devices
|
Wicklein, Sebastian
|
|
2017
|
16 |
4 |
p. 1038-1044
|
artikel
|
| 10 |
Grüneisen parameters and thermal conductivity in the phase change compound GeTe
|
Bosoni, Emanuele
|
|
2017
|
16 |
4 |
p. 997-1002
|
artikel
|
| 11 |
Introduction to the special focus topic issue on computational electronics of emerging memory elements
|
Magyari-Köpe, Blanka
|
|
2017
|
16 |
4 |
p. 995-996
|
artikel
|
| 12 |
Kinetic and thermodynamic heterogeneity: an intrinsic source of variability in Cu-based RRAM memories
|
Clima, Sergiu
|
|
2017
|
16 |
4 |
p. 1011-1016
|
artikel
|
| 13 |
Memory selector devices and crossbar array design: a modeling-based assessment
|
Chen, An
|
|
2017
|
16 |
4 |
p. 1186-1200
|
artikel
|
| 14 |
Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance
|
Larcher, Luca
|
|
2017
|
16 |
4 |
p. 1077-1084
|
artikel
|
| 15 |
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
|
Ielmini, D.
|
|
2017
|
16 |
4 |
p. 1121-1143
|
artikel
|
| 16 |
Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
|
Niroula, John
|
|
2017
|
16 |
4 |
p. 1144-1153
|
artikel
|
| 17 |
Prediction of new metastable $$\hbox {HfO}_{2}$$HfO2 phases: toward understanding ferro- and antiferroelectric films
|
Barabash, S. V.
|
|
2017
|
16 |
4 |
p. 1227-1235
|
artikel
|
| 18 |
Review of physics-based compact models for emerging nonvolatile memories
|
Xu, Nuo
|
|
2017
|
16 |
4 |
p. 1257-1269
|
artikel
|
| 19 |
$${ SIM}^2{ RRAM}$$SIM2RRAM: a physical model for RRAM devices simulation
|
Villena, Marco A.
|
|
2017
|
16 |
4 |
p. 1095-1120
|
artikel
|
| 20 |
Stochastic circuit breaker network model for bipolar resistance switching memories
|
Brivio, S.
|
|
2017
|
16 |
4 |
p. 1154-1166
|
artikel
|
| 21 |
Theoretical insights and experimental characterization of $$\hbox {HfO}_2$$HfO2-based OxRRAMs operation
|
Traore, B.
|
|
2017
|
16 |
4 |
p. 1045-1056
|
artikel
|
| 22 |
Toward reliable RRAM performance: macro- and micro-analysis of operation processes
|
Bersuker, Gennadi
|
|
2017
|
16 |
4 |
p. 1085-1094
|
artikel
|
Tijdschrift beschrijving