Digitale Bibliotheek
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                             25 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation Kim, Kyoung-Youm
2016
16 1 p. 148-154
artikel
2 A GMR device based on a magnetic nanostructure with a $$\updelta $$δ-doping Liu, Xu-Hui
2016
16 1 p. 115-119
artikel
3 A modified nanoelectronic spiking neuron model Pês, Beatriz dos Santos
2016
16 1 p. 98-105
artikel
4 A multi-objective synthesis methodology for majority/minority logic networks Sarvaghad-Moghaddam, Moein
2016
16 1 p. 162-179
artikel
5 Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications Naugarhiya, Alok
2017
16 1 p. 190-201
artikel
6 Application of generalized logistic functions in surface-potential-based MOSFET modeling Kevkić, Tijana
2016
16 1 p. 90-97
artikel
7 A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator Ghosh, Bahniman
2017
16 1 p. 120-126
artikel
8 Asymmetrically fed octagonal Sierpinski band-notched super-wideband antenna Singhal, Sarthak
2017
16 1 p. 210-219
artikel
9 Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including –$$\hbox {NH}_{2}$$NH2 and –COOH groups Rodríguez, S. J.
2016
16 1 p. 127-132
artikel
10 Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection Sethi, Divya
2017
16 1 p. 106-114
artikel
11 Design of plasmonic half-adder and half-subtractor circuits employing nonlinear effect in Mach–Zehnder interferometer Kumar, Santosh
2016
16 1 p. 139-147
artikel
12 Double aperture double-gate vertical high-electron-mobility transistor Tripathi, Ball Mukund Mani
2016
16 1 p. 39-46
artikel
13 Electromechanical modeling of stretchable interconnects Dong, Ziming
2017
16 1 p. 202-209
artikel
14 Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation Nilamani, S.
2017
16 1 p. 74-82
artikel
15 Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors Raad, Bhagwan Ram
2016
16 1 p. 24-29
artikel
16 Heterogate junctionless tunnel field-effect transistor: future of low-power devices Rahi, Shiromani Balmukund
2016
16 1 p. 30-38
artikel
17 Magnetic properties of bilayer graphene: a Monte Carlo study Masrour, R.
2016
16 1 p. 12-17
artikel
18 Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications Kumar, Subindu
2016
16 1 p. 47-60
artikel
19 Modeling the performance characteristics of ZnO-based heterojunction photodetectors Zavvari, Mahdi
2017
16 1 p. 133-138
artikel
20 Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications Bhattacharyya, A.
2016
16 1 p. 155-161
artikel
21 Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFET Gupta, Neha
2017
16 1 p. 61-73
artikel
22 Self-energy of cold atoms in a long-range disordered optical potential Yedjour, A.
2017
16 1 p. 18-23
artikel
23 Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate Cheng, Kun
2017
16 1 p. 83-89
artikel
24 Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X $$=$$= As, Bi, and Sb) Benallou, Yassine
2016
16 1 p. 1-11
artikel
25 Thermal conductivity reduction by embedding nanoparticles Mascali, Giovanni
2016
16 1 p. 180-189
artikel
                             25 gevonden resultaten
 
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