nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Accurate power MOSFET models including quasi-saturation effect
|
Galadi, Abdelghafour |
|
2016 |
15 |
2 |
p. 619-626 |
artikel |
2 |
A comprehensive study of bipolar operation in resistive switching memory devices
|
Berco, Dan |
|
2015 |
15 |
2 |
p. 577-585 |
artikel |
3 |
A modified macro model approach for SPICE based simulation of single electron transistor
|
Ghosh, Arpita |
|
2016 |
15 |
2 |
p. 400-406 |
artikel |
4 |
Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs
|
Ghanatian, Hamdam |
|
2016 |
15 |
2 |
p. 508-515 |
artikel |
5 |
Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
|
Tiwari, Pramod Kumar |
|
2016 |
15 |
2 |
p. 516-524 |
artikel |
6 |
A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench
|
Orouji, Ali A. |
|
2016 |
15 |
2 |
p. 537-544 |
artikel |
7 |
A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region
|
Zareiee, Meysam |
|
2016 |
15 |
2 |
p. 611-618 |
artikel |
8 |
A novel robust exclusive-OR function implementation in QCA nanotechnology with energy dissipation analysis
|
Singh, Gurmohan |
|
2016 |
15 |
2 |
p. 455-465 |
artikel |
9 |
A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
|
Berco, Dan |
|
2015 |
15 |
2 |
p. 586-594 |
artikel |
10 |
A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr$$\mathrm{O}_2$$O2 RRAM
|
Berco, Dan |
|
2015 |
15 |
2 |
p. 595-601 |
artikel |
11 |
A signal distribution grid for quantum-dot cellular automata
|
Tougaw, Douglas |
|
2015 |
15 |
2 |
p. 446-454 |
artikel |
12 |
Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Cd1-xCoxTe magnetic semiconductor alloys
|
Zerroug, S. |
|
2016 |
15 |
2 |
p. 473-478 |
artikel |
13 |
Continuum model of the potential of charge carriers in a bent piezoelectric ZnO nanowire: analytic and numerical study
|
Kim, Seong Min |
|
2016 |
15 |
2 |
p. 545-549 |
artikel |
14 |
Control of gold nano-domes to design an all-optical switch by simultaneously binary and continuous operated optimization
|
Keshavarzi, Rasoul |
|
2016 |
15 |
2 |
p. 569-576 |
artikel |
15 |
Design of U-shaped feed structured antenna for ultrawideband application
|
Shakib, M. N. |
|
2015 |
15 |
2 |
p. 627-633 |
artikel |
16 |
DFT studies of electronic structure and dielectric properties in layered perovskite $$\hbox {LaSrAlO}_{4}$$LaSrAlO4
|
Zhou, Jun |
|
2016 |
15 |
2 |
p. 466-472 |
artikel |
17 |
Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
|
Singh, Balraj |
|
2016 |
15 |
2 |
p. 502-507 |
artikel |
18 |
Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions
|
Naderi, Ali |
|
2015 |
15 |
2 |
p. 347-357 |
artikel |
19 |
Dual-channel trench LDMOS on SOI for RF power amplifier applications
|
Punetha, Mayank |
|
2015 |
15 |
2 |
p. 639-645 |
artikel |
20 |
EE-BESD: molecular FET modeling for efficient and effective nanocomputing design
|
Zahir, A. |
|
2016 |
15 |
2 |
p. 479-491 |
artikel |
21 |
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
|
Bayani, Amir Hossein |
|
2016 |
15 |
2 |
p. 381-388 |
artikel |
22 |
Introducing a novel model based on particle wave duality for energy dissipation analysis in MQCA circuits
|
Mohammadi, Mohammad Nabi |
|
2015 |
15 |
2 |
p. 683-696 |
artikel |
23 |
Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
|
Yamacli, Serhan |
|
2016 |
15 |
2 |
p. 389-399 |
artikel |
24 |
Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions
|
Bandyopadhyay, Prasit Kumar |
|
2016 |
15 |
2 |
p. 646-656 |
artikel |
25 |
Model for threshold voltage instability in top-gated nanocrystalline silicon thin film transistor
|
Sharma, Prachi |
|
2016 |
15 |
2 |
p. 666-671 |
artikel |
26 |
Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance
|
Verma, Jay Hind Kumar |
|
2016 |
15 |
2 |
p. 657-665 |
artikel |
27 |
Modeling and simulation of graphene-oxide-based RRAM
|
Lim, Ee Wah |
|
2016 |
15 |
2 |
p. 602-610 |
artikel |
28 |
Nested dissection solver for transport in 3D nano-electronic devices
|
Zhao, Y. |
|
2015 |
15 |
2 |
p. 708-720 |
artikel |
29 |
Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects
|
Rai, Mayank Kumar |
|
2016 |
15 |
2 |
p. 358-366 |
artikel |
30 |
Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications
|
Pratap, Yogesh |
|
2016 |
15 |
2 |
p. 492-501 |
artikel |
31 |
Properties of electron transmission through serially connected hexagonal nanorings
|
Orvis, Matthew B. |
|
2016 |
15 |
2 |
p. 697-707 |
artikel |
32 |
Reduced thickness interconnect model using GNR to avoid crosstalk effects
|
Bhattacharya, Sandip |
|
2016 |
15 |
2 |
p. 367-380 |
artikel |
33 |
Role of gradual gate doping engineering in improving phototransistor performance for ultra-low power applications
|
Ferhati, H. |
|
2015 |
15 |
2 |
p. 550-556 |
artikel |
34 |
Synthesis of reversible PLA using products sharing
|
Tara, Nazma |
|
2015 |
15 |
2 |
p. 420-428 |
artikel |
35 |
The Monte Carlo simulation of the hole transport in thin films of PFO:MEH-PPV
|
Bahrami, Mohsen |
|
2016 |
15 |
2 |
p. 672-682 |
artikel |
36 |
Theoretical study of anthoxanthin dyes for dye sensitized solar cells (DSSCs)
|
Megala, M. |
|
2016 |
15 |
2 |
p. 557-568 |
artikel |
37 |
Thermally aware performance analysis of single-walled carbon nanotube bundle as VLSI interconnects
|
Rai, Mayank Kumar |
|
2016 |
15 |
2 |
p. 407-419 |
artikel |
38 |
0.22 THz two-stage cascaded staggered double-vane traveling-wave tube
|
Deng, Guangsheng |
|
2015 |
15 |
2 |
p. 634-638 |
artikel |
39 |
Towards the design of hybrid QCA tiles targeting high fault tolerance
|
Sen, Bibhash |
|
2015 |
15 |
2 |
p. 429-445 |
artikel |
40 |
Two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET
|
Mahmud, Md. Arafat |
|
2016 |
15 |
2 |
p. 525-536 |
artikel |