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                             40 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Accurate power MOSFET models including quasi-saturation effect Galadi, Abdelghafour
2016
15 2 p. 619-626
artikel
2 A comprehensive study of bipolar operation in resistive switching memory devices Berco, Dan
2015
15 2 p. 577-585
artikel
3 A modified macro model approach for SPICE based simulation of single electron transistor Ghosh, Arpita
2016
15 2 p. 400-406
artikel
4 Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs Ghanatian, Hamdam
2016
15 2 p. 508-515
artikel
5 Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs) Tiwari, Pramod Kumar
2016
15 2 p. 516-524
artikel
6 A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench Orouji, Ali A.
2016
15 2 p. 537-544
artikel
7 A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region Zareiee, Meysam
2016
15 2 p. 611-618
artikel
8 A novel robust exclusive-OR function implementation in QCA nanotechnology with energy dissipation analysis Singh, Gurmohan
2016
15 2 p. 455-465
artikel
9 A numerical analysis of progressive and abrupt reset in conductive bridging RRAM Berco, Dan
2015
15 2 p. 586-594
artikel
10 A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr$$\mathrm{O}_2$$O2 RRAM Berco, Dan
2015
15 2 p. 595-601
artikel
11 A signal distribution grid for quantum-dot cellular automata Tougaw, Douglas
2015
15 2 p. 446-454
artikel
12 Composition dependence of fundamental properties of $$\hbox {Cd}_{\mathrm{1-x}}\hbox {Co}_\mathrm{x}$$Cd1-xCoxTe magnetic semiconductor alloys Zerroug, S.
2016
15 2 p. 473-478
artikel
13 Continuum model of the potential of charge carriers in a bent piezoelectric ZnO nanowire: analytic and numerical study Kim, Seong Min
2016
15 2 p. 545-549
artikel
14 Control of gold nano-domes to design an all-optical switch by simultaneously binary and continuous operated optimization Keshavarzi, Rasoul
2016
15 2 p. 569-576
artikel
15 Design of U-shaped feed structured antenna for ultrawideband application Shakib, M. N.
2015
15 2 p. 627-633
artikel
16 DFT studies of electronic structure and dielectric properties in layered perovskite $$\hbox {LaSrAlO}_{4}$$LaSrAlO4 Zhou, Jun
2016
15 2 p. 466-472
artikel
17 Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications Singh, Balraj
2016
15 2 p. 502-507
artikel
18 Double gate graphene nanoribbon field effect transistor with electrically induced junctions for source and drain regions Naderi, Ali
2015
15 2 p. 347-357
artikel
19 Dual-channel trench LDMOS on SOI for RF power amplifier applications Punetha, Mayank
2015
15 2 p. 639-645
artikel
20 EE-BESD: molecular FET modeling for efficient and effective nanocomputing design Zahir, A.
2016
15 2 p. 479-491
artikel
21 Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene Bayani, Amir Hossein
2016
15 2 p. 381-388
artikel
22 Introducing a novel model based on particle wave duality for energy dissipation analysis in MQCA circuits Mohammadi, Mohammad Nabi
2015
15 2 p. 683-696
artikel
23 Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons Yamacli, Serhan
2016
15 2 p. 389-399
artikel
24 Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions Bandyopadhyay, Prasit Kumar
2016
15 2 p. 646-656
artikel
25 Model for threshold voltage instability in top-gated nanocrystalline silicon thin film transistor Sharma, Prachi
2016
15 2 p. 666-671
artikel
26 Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance Verma, Jay Hind Kumar
2016
15 2 p. 657-665
artikel
27 Modeling and simulation of graphene-oxide-based RRAM Lim, Ee Wah
2016
15 2 p. 602-610
artikel
28 Nested dissection solver for transport in 3D nano-electronic devices Zhao, Y.
2015
15 2 p. 708-720
artikel
29 Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects Rai, Mayank Kumar
2016
15 2 p. 358-366
artikel
30 Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications Pratap, Yogesh
2016
15 2 p. 492-501
artikel
31 Properties of electron transmission through serially connected hexagonal nanorings Orvis, Matthew B.
2016
15 2 p. 697-707
artikel
32 Reduced thickness interconnect model using GNR to avoid crosstalk effects Bhattacharya, Sandip
2016
15 2 p. 367-380
artikel
33 Role of gradual gate doping engineering in improving phototransistor performance for ultra-low power applications Ferhati, H.
2015
15 2 p. 550-556
artikel
34 Synthesis of reversible PLA using products sharing Tara, Nazma
2015
15 2 p. 420-428
artikel
35 The Monte Carlo simulation of the hole transport in thin films of PFO:MEH-PPV Bahrami, Mohsen
2016
15 2 p. 672-682
artikel
36 Theoretical study of anthoxanthin dyes for dye sensitized solar cells (DSSCs) Megala, M.
2016
15 2 p. 557-568
artikel
37 Thermally aware performance analysis of single-walled carbon nanotube bundle as VLSI interconnects Rai, Mayank Kumar
2016
15 2 p. 407-419
artikel
38 0.22 THz two-stage cascaded staggered double-vane traveling-wave tube Deng, Guangsheng
2015
15 2 p. 634-638
artikel
39 Towards the design of hybrid QCA tiles targeting high fault tolerance Sen, Bibhash
2015
15 2 p. 429-445
artikel
40 Two-dimensional analytical model of threshold voltage and drain current of a double-halo gate-stacked triple-material double-gate MOSFET Mahmud, Md. Arafat
2016
15 2 p. 525-536
artikel
                             40 gevonden resultaten
 
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