| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Additional confirmation of a generalized analytical model based on multistage scattering phenomena to evaluate the ionization rates of charge carriers in semiconductors
|
Acharyya, Aritra
|
|
2015
|
15 |
1 |
p. 34-39
|
artikel
|
| 2 |
Analog implementation of neuron–astrocyte interaction in tripartite synapse
|
Ranjbar, Mahnaz
|
|
2015
|
15 |
1 |
p. 311-323
|
artikel
|
| 3 |
Analog performance investigation of dual electrode based doping-less tunnel FET
|
Anand, Sunny
|
|
2015
|
15 |
1 |
p. 94-103
|
artikel
|
| 4 |
Analysis of tunneling currents in multilayer black phosphorous and $$\hbox {MoS}_{2}$$MoS2 non-volatile flash memory cells
|
Sharma, Bikash
|
|
2015
|
15 |
1 |
p. 129-137
|
artikel
|
| 5 |
Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field
|
Krichen, Monem
|
|
2015
|
15 |
1 |
p. 269-276
|
artikel
|
| 6 |
A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering
|
Djeffal, F.
|
|
2015
|
15 |
1 |
p. 301-310
|
artikel
|
| 7 |
A novel design of quantum dot cellular automata 5-input majority gate with some physical proofs
|
Kassa, Sankit R.
|
|
2015
|
15 |
1 |
p. 324-334
|
artikel
|
| 8 |
A novel process variation immune dopingless zero sub-threshold slope and zero impact ionization FET (DL-Z$$^{2}$$2FET) based on transition metals
|
Singh, Sangeeta
|
|
2015
|
15 |
1 |
p. 67-75
|
artikel
|
| 9 |
A novel symmetrical 4H–SiC MESFET: an effective way to improve the breakdown voltage
|
Ramezani, Zeinab
|
|
2015
|
15 |
1 |
p. 163-171
|
artikel
|
| 10 |
A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs
|
Sho, Shohiro
|
|
2015
|
15 |
1 |
p. 76-83
|
artikel
|
| 11 |
A surface-potential based drain current model for short-channel symmetric double-gate junctionless transistor
|
Baruah, Ratul Kumar
|
|
2015
|
15 |
1 |
p. 45-52
|
artikel
|
| 12 |
Asymmetric dual-k spacer trigate FinFET for enhanced analog/RF performance
|
Saini, Gaurav
|
|
2015
|
15 |
1 |
p. 84-93
|
artikel
|
| 13 |
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
|
Prasad, Santashraya
|
|
2015
|
15 |
1 |
p. 172-180
|
artikel
|
| 14 |
Comment on “Zero and negative energy dissipation at information-theoretic erasure”
|
Anderson, Neal G.
|
|
2015
|
15 |
1 |
p. 340-342
|
artikel
|
| 15 |
Compact 2D modeling and drain current performance analysis of a work function engineered double gate tunnel field effect transistor
|
Sarkhel, Saheli
|
|
2015
|
15 |
1 |
p. 104-114
|
artikel
|
| 16 |
Design and analysis of broadband magneto-electric dipole antenna for LTE femtocell base stations
|
Govindanarayanan, Idayachandran
|
|
2015
|
15 |
1 |
p. 200-209
|
artikel
|
| 17 |
Design of a wideband gap-coupled modified square fractal antenna
|
Srivastava, Dinesh Kumar
|
|
2015
|
15 |
1 |
p. 239-247
|
artikel
|
| 18 |
Development of computational model for tunable characteristics of graphene based triangular patch antenna in THz regime
|
Bala, Rajni
|
|
2015
|
15 |
1 |
p. 222-227
|
artikel
|
| 19 |
Effect of magnetic field on the RF performance of millimeter-wave IMPATT source
|
Banerjee, Partha
|
|
2015
|
15 |
1 |
p. 210-221
|
artikel
|
| 20 |
Electro-thermal simulation based on coupled Boltzmann transport equations for electrons and phonons
|
Nghiêm, T. T. Trang
|
|
2015
|
15 |
1 |
p. 3-15
|
artikel
|
| 21 |
Energy relaxation of hot carriers in graphene via plasmon interactions
|
Ferry, D. K.
|
|
2015
|
15 |
1 |
p. 144-153
|
artikel
|
| 22 |
Investigating the optical AND gate using plasmonic nano-spheres
|
Kaboli, Milad
|
|
2015
|
15 |
1 |
p. 295-300
|
artikel
|
| 23 |
Low-temperature enhancement of the thermoelectric Seebeck coefficient in gated 2D semiconductor nanomembranes
|
Kommini, A.
|
|
2015
|
15 |
1 |
p. 27-33
|
artikel
|
| 24 |
Mathematical simulation for estimating the potential of the hydrogen-terminated diamond FET in the mm-wave range
|
Garber, Gennadiy Z.
|
|
2015
|
15 |
1 |
p. 181-190
|
artikel
|
| 25 |
Modulation doping and energy filtering as effective ways to improve the thermoelectric power factor
|
Neophytou, Neophytos
|
|
2016
|
15 |
1 |
p. 16-26
|
artikel
|
| 26 |
Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators
|
Sengupta, Parijat
|
|
2015
|
15 |
1 |
p. 115-128
|
artikel
|
| 27 |
Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell
|
Procel, P.
|
|
2015
|
15 |
1 |
p. 260-268
|
artikel
|
| 28 |
Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$SiO2 current blocking layer
|
Shrestha, Niraj Man
|
|
2015
|
15 |
1 |
p. 154-162
|
artikel
|
| 29 |
Optoelectronic simulation and optimization of unconstrained four terminal amorphous silicon/crystalline silicon tandem solar cell
|
Navaraj, William Taube
|
|
2015
|
15 |
1 |
p. 287-294
|
artikel
|
| 30 |
Physics-based simulation of 4H-SIC DMOSFET structure under inductive switching
|
Pushpakaran, Bejoy N.
|
|
2015
|
15 |
1 |
p. 191-199
|
artikel
|
| 31 |
Piezoelectric effects on carrier capturing time in a hybrid p–n junction system: a numerical study using finite element method
|
Kim, SeongMin
|
|
2015
|
15 |
1 |
p. 40-44
|
artikel
|
| 32 |
Polarization angle independent perfect multiband metamaterial absorber and energy harvesting application
|
Gunduz, O. T.
|
|
2015
|
15 |
1 |
p. 228-238
|
artikel
|
| 33 |
Radiation performance of planar junctionless devices and junctionless SRAMs
|
Vinodhkumar, N.
|
|
2015
|
15 |
1 |
p. 61-66
|
artikel
|
| 34 |
Response to “Comment on ‘Zero and negative energy dissipation at information-theoretic erasure”’
|
Kish, Laszlo Bela
|
|
2016
|
15 |
1 |
p. 343-346
|
artikel
|
| 35 |
Scalability and process induced variation analysis of polarity controlled silicon nanowire transistor
|
Sahu, Chitrakant
|
|
2015
|
15 |
1 |
p. 53-60
|
artikel
|
| 36 |
Silicene field effect transistor with high on/off current ratio and good current saturation
|
Vali, Mehran
|
|
2015
|
15 |
1 |
p. 138-143
|
artikel
|
| 37 |
Special issue: electrothermal and thermoelectric modeling of nanoscale devices
|
Vasileska, Dragica
|
|
2016
|
15 |
1 |
p. 1-2
|
artikel
|
| 38 |
TCAD simulation and modeling of impact ionization (II) enhanced thin film c-Si solar cells
|
Kumar, Vikas
|
|
2015
|
15 |
1 |
p. 248-259
|
artikel
|
| 39 |
Theoretical study of the impact of rear interface passivation on MWT silicon solar cells
|
Nicolai, Massimo
|
|
2015
|
15 |
1 |
p. 277-286
|
artikel
|
| 40 |
Zero and negative energy dissipation at information-theoretic erasure
|
Kish, Laszlo Bela
|
|
2015
|
15 |
1 |
p. 335-339
|
artikel
|
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