| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analog performance investigation of misaligned double gate junctionless transistor
|
Amin, S. Intekhab
|
|
2015
|
14 |
3 |
p. 675-685
|
artikel
|
| 2 |
An analog astrocyte–neuron interaction circuit for neuromorphic applications
|
Ranjbar, Mahnaz
|
|
2015
|
14 |
3 |
p. 694-706
|
artikel
|
| 3 |
An analytical approach for parameter extraction in linear and saturation regions of top and bottom contact organic transistors
|
Mittal, Poornima
|
|
2015
|
14 |
3 |
p. 828-843
|
artikel
|
| 4 |
An approach for complete 2-D analytical potential modelling of fully depleted symmetric double gate junction less transistor
|
Chandra Deva Sarma, Kaushik
|
|
2015
|
14 |
3 |
p. 717-725
|
artikel
|
| 5 |
A novel fin field effect transistor by extra insulator layer for high performance nanoscale applications
|
Orouji, Ali A.
|
|
2015
|
14 |
3 |
p. 811-819
|
artikel
|
| 6 |
A novel high performance junctionless FETs with saddle-gate
|
Jin, Xiaoshi
|
|
2015
|
14 |
3 |
p. 661-668
|
artikel
|
| 7 |
A pseudo 2-D surface potential model of a dual material double gate junctionless field effect transistor
|
Agrawal, Ashutosh Kumar
|
|
2015
|
14 |
3 |
p. 686-693
|
artikel
|
| 8 |
Compact channel potential analytical modeling of DG-TFET based on Evanescent-mode approach
|
Kumar, Sunil
|
|
2015
|
14 |
3 |
p. 820-827
|
artikel
|
| 9 |
Design and fabrication of a 10 Gbps transimpedance amplifier-receiver for optical interconnects
|
Sangirov, Jamshid
|
|
2015
|
14 |
3 |
p. 669-674
|
artikel
|
| 10 |
Dilatation deformation potential, drift mobility and piezoresistance in p-type silicon (quantum kinetic approach)
|
Kozlovskiy, S. I.
|
|
2015
|
14 |
3 |
p. 788-797
|
artikel
|
| 11 |
Existence of bounded discrete steady state solutions of the van Roosbroeck system with monotone Fermi–Dirac statistic functions
|
Gärtner, K.
|
|
2015
|
14 |
3 |
p. 773-787
|
artikel
|
| 12 |
First-principles study of spin transport in $$\hbox {CrO}_{2}\hbox {-SiCNT-CrO}_{2}$$CrO2-SiCNT-CrO2 magnetic tunnel junction
|
Choudhary, Sudhanshu
|
|
2015
|
14 |
3 |
p. 852-856
|
artikel
|
| 13 |
Function approximation by hardware spiking neural network
|
Zaman Farsa, Edris
|
|
2015
|
14 |
3 |
p. 707-716
|
artikel
|
| 14 |
Hankel transform domain analysis of covered circular microstrip patch printed on an anisotropic dielectric layer
|
Bedra, Sami
|
|
2015
|
14 |
3 |
p. 747-753
|
artikel
|
| 15 |
Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET
|
Gupta, Neha
|
|
2015
|
14 |
3 |
p. 798-810
|
artikel
|
| 16 |
Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT
|
Swain, R.
|
|
2015
|
14 |
3 |
p. 754-761
|
artikel
|
| 17 |
Numerical analysis of the resistance behavior of an electrostatically-induced graphene double junction
|
Marconcini, Paolo
|
|
2015
|
14 |
3 |
p. 653-660
|
artikel
|
| 18 |
Optimized fault tolerant designs of the reversible barrel shifters using low power MOS transistors
|
Shamsujjoha, Md.
|
|
2015
|
14 |
3 |
p. 726-746
|
artikel
|
| 19 |
Quaternary full adder cells based on carbon nanotube FETs
|
Sharifi, Fazel
|
|
2015
|
14 |
3 |
p. 762-772
|
artikel
|
| 20 |
Spice modeling of oxide and interface trapped charge effects in fully-depleted double-gate FinFETs
|
Jankovic, Nebojsa
|
|
2015
|
14 |
3 |
p. 844-851
|
artikel
|
Tijdschrift beschrijving