nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Acceptor activation model for III-nitride LEDs
|
Römer, Friedhard |
|
2015 |
14 |
2 |
p. 456-463 |
artikel |
2 |
A comprehensive study of popular eigenvalue methods employed for quantum calculation of energy eigenstates in nanostructures using GPUs
|
Rodrigues, W. |
|
2015 |
14 |
2 |
p. 593-603 |
artikel |
3 |
A high performance gate engineered charge plasma based tunnel field effect transistor
|
Bashir, Faisal |
|
2015 |
14 |
2 |
p. 477-485 |
artikel |
4 |
Analysis of rare events effect on single-electronics simulation based on orthodox theory
|
Elabd, Ali A. |
|
2015 |
14 |
2 |
p. 604-610 |
artikel |
5 |
An analytical 3D model for short-channel effects in undoped FinFETs
|
El Hamid, Hamdy Abd |
|
2015 |
14 |
2 |
p. 500-505 |
artikel |
6 |
A new quantum-dot cellular automata fault-tolerant full-adder
|
Farazkish, Razieh |
|
2015 |
14 |
2 |
p. 506-514 |
artikel |
7 |
A transport equation for confined structures applied to the OprP, Gramicidin A, and KcsA channels
|
Khodadadian, Amirreza |
|
2015 |
14 |
2 |
p. 524-532 |
artikel |
8 |
Binary optimization of gold nano-rods for designing an optical modulator
|
Emami, Farzin |
|
2015 |
14 |
2 |
p. 574-581 |
artikel |
9 |
Binary optimization of metallic nano-tube-based absorption coefficient
|
Akhlaghi, Majid |
|
2015 |
14 |
2 |
p. 486-491 |
artikel |
10 |
Computational and experimental analysis of high gain antenna for WLAN/WiMAX applications
|
Ahsan, Md. Rezwanul |
|
2015 |
14 |
2 |
p. 634-641 |
artikel |
11 |
Design of a unit composite right/left-handed cell based bandpass filter with floating slot approach and suppression of spurious using defected microstrip structures
|
Mondal, Pratik |
|
2015 |
14 |
2 |
p. 642-652 |
artikel |
12 |
Dual metal-double gate tunnel field effect transistor with mono/hetero dielectric gate material
|
Jain, Prateek |
|
2015 |
14 |
2 |
p. 537-542 |
artikel |
13 |
Effect of the front surface field (a-Si:H) on the spectral response of thin films heterojunctions solar cells
|
Kadri, Emna |
|
2015 |
14 |
2 |
p. 557-565 |
artikel |
14 |
Effects of Fin shape on sub-10 nm FinFETs
|
Yu, Zhihao |
|
2015 |
14 |
2 |
p. 515-523 |
artikel |
15 |
Effects of laser beam modulation on all-optical switching phase diagrams in magneto-optical ultrafast storage device
|
Petrila, Iulian |
|
2015 |
14 |
2 |
p. 627-633 |
artikel |
16 |
Electronic properties of axial In$$_x$$xGa$$_{1-x}$$1-xN insertions in GaN nanowires
|
Marquardt, Oliver |
|
2015 |
14 |
2 |
p. 464-468 |
artikel |
17 |
Hybrid methodology to model random dopant fluctuations in low doped FinFETs
|
Agarwal, Samarth |
|
2015 |
14 |
2 |
p. 533-536 |
artikel |
18 |
Inhomogeneous injection in III-nitride light emitters with deep multiple quantum wells
|
Kisin, Mikhail V. |
|
2015 |
14 |
2 |
p. 432-443 |
artikel |
19 |
Introduction to the Special Issue on “Simulation of GaN-based Light-Emitting Diodes”
|
Piprek, Joachim |
|
2015 |
14 |
2 |
p. 381 |
artikel |
20 |
Monte Carlo simulation of hot carrier transport in III-N LEDs
|
Kivisaari, Pyry |
|
2015 |
14 |
2 |
p. 382-397 |
artikel |
21 |
Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields
|
Ahmed, Shaikh |
|
2015 |
14 |
2 |
p. 543-556 |
artikel |
22 |
Multiscale approaches for the simulation of InGaN/GaN LEDs
|
Auf der Maur, Matthias |
|
2015 |
14 |
2 |
p. 398-408 |
artikel |
23 |
Non-local transport in numerical simulation of GaN LED
|
Simon Li, Z. M. |
|
2015 |
14 |
2 |
p. 409-415 |
artikel |
24 |
Optical excitation dependent emission properties of InGaN quantum wells
|
Hader, J. |
|
2015 |
14 |
2 |
p. 425-431 |
artikel |
25 |
Percolation transport study in nitride based LED by considering the random alloy fluctuation
|
Wu, Chen-Kuo |
|
2015 |
14 |
2 |
p. 416-424 |
artikel |
26 |
Performance and analysis of temperature dependent multi-walled carbon nanotubes as global interconnects at different technology nodes
|
Singh, Karmjit |
|
2015 |
14 |
2 |
p. 469-476 |
artikel |
27 |
Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs
|
Samoju, Visweswara Rao |
|
2015 |
14 |
2 |
p. 582-592 |
artikel |
28 |
Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
|
Mandurrino, Marco |
|
2015 |
14 |
2 |
p. 444-455 |
artikel |
29 |
Stability and delay analysis of multi-layered GNR and multi-walled CNT interconnects
|
Kumar, Vobulapuram Ramesh |
|
2015 |
14 |
2 |
p. 611-618 |
artikel |
30 |
Super-threshold semi analytical channel potential model for DG tunnel FET
|
Yadav, Menka |
|
2015 |
14 |
2 |
p. 566-573 |
artikel |
31 |
The effect of high-k gate dielectrics on device and circuit performances of a junctionless transistor
|
Baruah, Ratul Kumar |
|
2015 |
14 |
2 |
p. 492-499 |
artikel |
32 |
The quantum transport of pyrene and its silicon-doped variant: a DFT-NEGF approach
|
Rastkar, A. |
|
2015 |
14 |
2 |
p. 619-626 |
artikel |