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                             41 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A Deterministic approach to noise in a non-equilibrium electron–phonon system based on the Boltzmann equation Ramonas, Mindaugas
2014
14 1 p. 43-50
artikel
2 A full-range dual material gate tunnel field effect transistor drain current model considering both source and drain depletion region band-to-band tunneling Pandey, Pratyush
2014
14 1 p. 280-287
artikel
3 All-optical D flip-flop using single quantum-dot semiconductor optical amplifier assisted Mach–Zehnder interferometer Gayen, Dilip Kumar
2014
14 1 p. 129-138
artikel
4 Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect Cheng, He
2014
14 1 p. 321-328
artikel
5 A new static differential design style for hybrid SET–CMOS logic circuits Abutaleb, M. M.
2015
14 1 p. 329-340
artikel
6 A novel digital implementation of neuron–astrocyte interactions Nazari, Soheila
2014
14 1 p. 227-239
artikel
7 Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization Nallatamby, Jean-Christophe
2014
14 1 p. 4-14
artikel
8 Design and finite element modeling of series-shunt configuration based RF MEMS switch for high isolation operation in K–Ka band Singh, Tejinder
2014
14 1 p. 167-179
artikel
9 Design of a CPW fed simple hexagonal shape UWB antenna with WLAN and WiMAX band rejection characteristics Mandal, Tapan
2014
14 1 p. 300-308
artikel
10 Distributed-memory parallelization of the Wigner Monte Carlo method using spatial domain decomposition Ellinghaus, Paul
2014
14 1 p. 151-162
artikel
11 Effect of high-efficiency emitter on noise characteristics of electron amplifiers Shymanska, Alla
2015
14 1 p. 341-351
artikel
12 Erratum to: Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots Chimalgi, Vinay
2014
14 1 p. 380
artikel
13 Extraction of the voltage-dependent quantum capacitance and kinetic inductance of GNRFETs: a first-principles study Yamacli, Serhan
2014
14 1 p. 249-256
artikel
14 Finite element based three dimensional Schrödinger solver for nano-scale devices Agarwal, Samarth
2014
14 1 p. 163-166
artikel
15 1/f noise simulation in MOSFETs under cyclo-stationary conditions using SPICE simulator Both, Thiago H.
2014
14 1 p. 15-20
artikel
16 Fractal antenna for multi-frequency applications using PIN diode Rakibe, Sumit V.
2014
14 1 p. 222-226
artikel
17 Introduction to special issue on noise modeling Gonzalez, Tomas
2015
14 1 p. 1-3
artikel
18 Mapping of performance limiting issues to analyze top and bottom contact organic thin film transistors Mittal, Poornima
2015
14 1 p. 360-379
artikel
19 Microwave characterization of anisotropic graphene by applying the Duality theorem Mencarelli, Davide
2014
14 1 p. 214-221
artikel
20 mm-Wave noise modeling in advanced SiGe and InP HBTs Sakalas, P.
2015
14 1 p. 62-71
artikel
21 Modeling of characteristic parameters for nano-scale junctionless double gate MOSFET considering quantum mechanical effect Chanda, Manash
2014
14 1 p. 262-269
artikel
22 Monte Carlo modelling of noise in advanced III–V HEMTs Mateos, J.
2014
14 1 p. 72-86
artikel
23 Negative differential conductance in chromium based nano rings Nikipar, S.
2014
14 1 p. 257-261
artikel
24 Noise in oscillators: a review of state space decomposition approaches Traversa, F. L.
2014
14 1 p. 51-61
artikel
25 Numerical aspects of noise simulation in MOSFETs by a Langevin–Boltzmann solver Ruić, Dino
2014
14 1 p. 21-36
artikel
26 Numerical evaluation of the ITRS transistor scaling Nagy, Roland
2014
14 1 p. 192-202
artikel
27 Physical model for electroforming process in valence change resistive random access memory Sun, Pengxiao
2014
14 1 p. 146-150
artikel
28 Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors Acharyya, Aritra
2014
14 1 p. 309-320
artikel
29 Quantum noise from a Bohmian perspective: fundamental understanding and practical computation in electron devices Marian, D.
2015
14 1 p. 114-128
artikel
30 Role of side groups and temperature dependent studies in a molecular device Preferencial Kala, C.
2014
14 1 p. 240-248
artikel
31 Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$p-$$n$$n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$Si/Si0.4Ge0.6/Si quantum well Acharyya, Aritra
2014
14 1 p. 180-191
artikel
32 Shot noise suppression due to a magnetic field in disordered conductors Macucci, M.
2014
14 1 p. 107-113
artikel
33 Simulation of electronic noise in disordered organic semiconductor devices based on the master equation Jungemann, Christoph
2014
14 1 p. 37-42
artikel
34 Structural and electronic properties of zigzag graphene nanoribbon decorated with copper cluster Berahman, M.
2014
14 1 p. 270-279
artikel
35 Suppressed and enhanced shot noise in one dimensional field-effect transistors Iannaccone, Giuseppe
2015
14 1 p. 94-106
artikel
36 TeraHertz electronic noise in field-effect transistors Palermo, C.
2014
14 1 p. 87-93
artikel
37 Textured window with DLAR coating design for an effective minimization of electrical and optical losses in an efficient III–V solar cell Singh, Khomdram Jolson
2014
14 1 p. 288-299
artikel
38 The role of measurement time on the universal crossover from $$1/f$$1/f to non-$$1/f$$1/f noise behavior Diaz, Sebastian A.
2014
14 1 p. 203-208
artikel
39 Transient dynamics in the Anderson–Holstein model with interfacial screening Perfetto, E.
2015
14 1 p. 352-359
artikel
40 Tunable Josephson supercurrent through a two level quantum dot superconductor tunnel junction Dhyani, A.
2014
14 1 p. 139-145
artikel
41 Ultrafast all-optical universal logic gates with graphene and graphene-oxide metal porphyrin composites Yadav, Chandresh
2014
14 1 p. 209-213
artikel
                             41 gevonden resultaten
 
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