nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analytical modeling and simulation of a linearly graded binary metal alloy gate nanoscale cylindrical MOSFET for reduced short channel effects
|
Sarkhel, Saheli |
|
2014 |
13 |
3 |
p. 599-605 |
artikel |
2 |
A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
|
Lakhdar, N. |
|
2014 |
13 |
3 |
p. 726-731 |
artikel |
3 |
A novel quantum-dot cellular automata CLB of FPGA
|
kianpour, Moein |
|
2014 |
13 |
3 |
p. 709-725 |
artikel |
4 |
A symmetric quantum-dot cellular automata design for 5-input majority gate
|
Roohi, Arman |
|
2014 |
13 |
3 |
p. 701-708 |
artikel |
5 |
Calculating the steady-state polarizations of quantum cellular automata (QCA) circuits
|
Karim, Faizal |
|
2014 |
13 |
3 |
p. 569-584 |
artikel |
6 |
Contiguous clock lines for pipelined nanomagnet logic
|
Butler, Katherine C. |
|
2014 |
13 |
3 |
p. 763-768 |
artikel |
7 |
COOS: a wave-function based Schrödinger–Poisson solver for ballistic nanotube transistors
|
Claus, Martin |
|
2014 |
13 |
3 |
p. 689-700 |
artikel |
8 |
Delay uncertainty in MLGNR interconnects under process induced variations of width, doping, dielectric thickness and mean free path
|
Reddy, K. Narasimha |
|
2014 |
13 |
3 |
p. 639-646 |
artikel |
9 |
Determining bound states in a semiconductor device with contacts using a nonlinear eigenvalue solver
|
Vandenberghe, William G. |
|
2014 |
13 |
3 |
p. 753-762 |
artikel |
10 |
Effects of acceptor dopants on the enhanced piezoelectric potential of ZnO nanowires: limiting free charge-carrier density through neutralizing donors
|
Kim, Tae Yun |
|
2014 |
13 |
3 |
p. 606-612 |
artikel |
11 |
Electrical characterization and parameter extraction of organic thin film transistors using two dimensional numerical simulations
|
Bhargava, Kshitij |
|
2014 |
13 |
3 |
p. 585-592 |
artikel |
12 |
Electronic transport across a layered structure of Fe/$$\upbeta $$β-poly vinylidene fluoride/Fe using DFT calculations
|
Gangineni, R. B. |
|
2014 |
13 |
3 |
p. 613-619 |
artikel |
13 |
Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
|
Lakhdar, N. |
|
2014 |
13 |
3 |
p. 732 |
artikel |
14 |
Impact of Auger recombination parameterisations on predicting silicon wafer solar cell performance
|
Ma, Fa-Jun |
|
2014 |
13 |
3 |
p. 647-656 |
artikel |
15 |
Modeling and optimization of radiation characteristics of triangular superconducting microstrip antenna array
|
Barkat, O. |
|
2014 |
13 |
3 |
p. 657-665 |
artikel |
16 |
Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric
|
Tyaginov, S. E. |
|
2014 |
13 |
3 |
p. 733-738 |
artikel |
17 |
Multiple-band large-signal characterization of millimeter-wave double avalanche region transit time diode
|
Bandyopadhyay, Atindra Mohan |
|
2014 |
13 |
3 |
p. 769-777 |
artikel |
18 |
Optical properties of quantum dots versus quantum antidots: Effects of hydrostatic pressure and temperature
|
Naimi, Y. |
|
2014 |
13 |
3 |
p. 666-672 |
artikel |
19 |
Performance modeling and analysis of carbon nanotube bundles for future VLSI circuit applications
|
Sahoo, Manodipan |
|
2014 |
13 |
3 |
p. 673-688 |
artikel |
20 |
Quantum drift-diffusion model for IMPATT devices
|
Acharyya, Aritra |
|
2014 |
13 |
3 |
p. 739-752 |
artikel |
21 |
Role of inelastic electron–phonon scattering in electron transport through ultra-scaled amorphous phase change material nanostructures
|
Liu, Jie |
|
2014 |
13 |
3 |
p. 620-626 |
artikel |
22 |
Static and dynamic characteristics of dual gate organic TFT based NAND and NOR circuits
|
Kumar, Brijesh |
|
2014 |
13 |
3 |
p. 627-638 |
artikel |
23 |
Substrate constructed by an array of split ring resonators for a THz planar antenna
|
Koutsoupidou, Maria |
|
2014 |
13 |
3 |
p. 593-598 |
artikel |