| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs
|
Saramekala, Gopi Krishna
|
|
2014
|
13 |
2 |
p. 467-476
|
artikel
|
| 2 |
An impact of bias and structure dependent L$$_\mathrm{SD}$$SD variation on the performance of GaN HEMTs based biosensor
|
Sharma, Niketa
|
|
2014
|
13 |
2 |
p. 503-508
|
artikel
|
| 3 |
A novel SOI MESFET by $$\uppi $$π-shaped gate for improving the driving current
|
Shahnazarisani, Hadi
|
|
2014
|
13 |
2 |
p. 562-568
|
artikel
|
| 4 |
A quantitative approach to study solid state phase coarsening in solder alloys using combined phase-field modeling and experimental observation
|
Tavakoli, Mohammad Mahdi
|
|
2013
|
13 |
2 |
p. 425-431
|
artikel
|
| 5 |
Band-gap properties of 2D photonic crystal made by silica matrix doped with magnetic nanoparticles
|
Kahlouche, Ahmed
|
|
2014
|
13 |
2 |
p. 490-495
|
artikel
|
| 6 |
Band structure effect on the electron current oscillation in ultra-scaled GaSb Schottky MOSFET: tight-binding approach
|
Ahangari, Zahra
|
|
2013
|
13 |
2 |
p. 375-382
|
artikel
|
| 7 |
Continuity equation based nonquasi-static charge model for independent double gate MOSFET
|
Sharan, Neha
|
|
2013
|
13 |
2 |
p. 353-359
|
artikel
|
| 8 |
Crosstalk analysis of CMOS buffer driven interconnects for ultra-low power applications
|
Dhiman, Rohit
|
|
2013
|
13 |
2 |
p. 360-369
|
artikel
|
| 9 |
Design and analysis of non-uniform shaped RF MEMS switch
|
Kolte, Vaibhav
|
|
2014
|
13 |
2 |
p. 547-554
|
artikel
|
| 10 |
Effect of unit-cells of the frequency selective surface as superstrate on the directivity of rectangular microstrip antenna
|
Jha, Kumud Ranjan
|
|
2014
|
13 |
2 |
p. 496-502
|
artikel
|
| 11 |
Erratum to: Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers
|
Nutku, F.
|
|
2014
|
13 |
2 |
p. 466
|
artikel
|
| 12 |
Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism
|
Yamada, Tatsuya
|
|
2013
|
13 |
2 |
p. 400-407
|
artikel
|
| 13 |
New approaches for modeling and simulation of quantum-dot cellular automata
|
Hayati, Mohsen
|
|
2014
|
13 |
2 |
p. 537-546
|
artikel
|
| 14 |
New capacitance–voltage model for linearly graded junction
|
Boukredimi, Assia
|
|
2014
|
13 |
2 |
p. 477-489
|
artikel
|
| 15 |
On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects
|
Wang, Guanyu
|
|
2014
|
13 |
2 |
p. 439-448
|
artikel
|
| 16 |
Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs
|
Acharyya, Aritra
|
|
2013
|
13 |
2 |
p. 408-424
|
artikel
|
| 17 |
Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET
|
Suveetha Dhanaselvam, P.
|
|
2014
|
13 |
2 |
p. 449-455
|
artikel
|
| 18 |
Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
|
Sun, Pengxiao
|
|
2013
|
13 |
2 |
p. 432-438
|
artikel
|
| 19 |
Piezoresistance effect in n-type silicon: from bulk to nanowires
|
Kozlovskiy, S. I.
|
|
2014
|
13 |
2 |
p. 515-528
|
artikel
|
| 20 |
Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers
|
Nutku, F.
|
|
2014
|
13 |
2 |
p. 456-465
|
artikel
|
| 21 |
Simulation study on deep nanoscale short channel junctionless SOI FinFETs with triple-gate or double-gate structures
|
Liu, Xi
|
|
2014
|
13 |
2 |
p. 509-514
|
artikel
|
| 22 |
Spin-orbit interaction in a quantum pseudodot: pressure effect
|
Khordad, R.
|
|
2013
|
13 |
2 |
p. 383-393
|
artikel
|
| 23 |
Spin transport in monolayer molybdenum disulfide (MoS2)
|
Bishnoi, Bhupesh
|
|
2013
|
13 |
2 |
p. 394-399
|
artikel
|
| 24 |
1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach–Zehnder interferometer
|
Kotb, A.
|
|
2014
|
13 |
2 |
p. 555-561
|
artikel
|
| 25 |
The latency insertion method for simulations of phase-locked loops
|
Goh, P.
|
|
2014
|
13 |
2 |
p. 529-536
|
artikel
|
| 26 |
Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor
|
Saygi, S.
|
|
2013
|
13 |
2 |
p. 370-374
|
artikel
|
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