| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires
|
Uno, Shigeyasu
|
|
2010
|
10 |
1-2 |
p. 104-120
|
artikel
|
| 2 |
Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
|
Srivastava, Viranjay M.
|
|
2011
|
10 |
1-2 |
p. 229-240
|
artikel
|
| 3 |
Analysis of narrow terahertz microstrip transmission-line on multilayered substrate
|
Jha, Kumud Ranjan
|
|
2010
|
10 |
1-2 |
p. 186-194
|
artikel
|
| 4 |
Application of the R-matrix method in quantum transport simulations
|
Mil’nikov, Gennady
|
|
2011
|
10 |
1-2 |
p. 51-64
|
artikel
|
| 5 |
A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs
|
Abdi, M. A.
|
|
2010
|
10 |
1-2 |
p. 179-185
|
artikel
|
| 6 |
Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET
|
Maouhoub, N.
|
|
2010
|
10 |
1-2 |
p. 141-143
|
artikel
|
| 7 |
Compact modeling and simulation of nanoscale fully depleted DG-SOI MOSFETS
|
Sharma, Rajeev
|
|
2011
|
10 |
1-2 |
p. 201-209
|
artikel
|
| 8 |
Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices
|
Ancona, M. G.
|
|
2011
|
10 |
1-2 |
p. 65-97
|
artikel
|
| 9 |
Dynamic bond-order force field
|
Watanabe, Takanobu
|
|
2011
|
10 |
1-2 |
p. 2-20
|
artikel
|
| 10 |
Equivalent-circuit model for electrostatic micro-torsion mirror
|
Matsuda, Kazunori
|
|
2011
|
10 |
1-2 |
p. 136-140
|
artikel
|
| 11 |
Erratum to: Application of the R-matrix method in quantum transport simulations
|
Mil’nikov, Gennady
|
|
2011
|
10 |
1-2 |
p. 268
|
artikel
|
| 12 |
Erratum to: Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices
|
Souma, Satofumi
|
|
2011
|
10 |
1-2 |
p. 269
|
artikel
|
| 13 |
Foreword
|
Yu, Zhiping
|
|
2011
|
10 |
1-2 |
p. 1
|
artikel
|
| 14 |
Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structure
|
Rana, Ashwani K.
|
|
2011
|
10 |
1-2 |
p. 222-228
|
artikel
|
| 15 |
Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)
|
García-Ramírez, Mario A.
|
|
2011
|
10 |
1-2 |
p. 248-257
|
artikel
|
| 16 |
Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors
|
Wondmagegn, W. T.
|
|
2010
|
10 |
1-2 |
p. 144-153
|
artikel
|
| 17 |
Impact of the Coulomb interaction on nano-scale silicon device characteristics
|
Sano, Nobuyuki
|
|
2010
|
10 |
1-2 |
p. 98-103
|
artikel
|
| 18 |
Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method
|
Choudhary, Sudhanshu
|
|
2011
|
10 |
1-2 |
p. 241-247
|
artikel
|
| 19 |
Modeling of complex oxide materials from the first principles: systematic applications to vanadates RVO3 with distorted perovskite structure
|
Solovyev, Igor
|
|
2011
|
10 |
1-2 |
p. 21-34
|
artikel
|
| 20 |
Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices
|
Souma, Satofumi
|
|
2011
|
10 |
1-2 |
p. 35-43
|
artikel
|
| 21 |
Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains
|
Kozlovskiy, S. I.
|
|
2011
|
10 |
1-2 |
p. 258-267
|
artikel
|
| 22 |
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor
|
Sels, Dries
|
|
2011
|
10 |
1-2 |
p. 216-221
|
artikel
|
| 23 |
Quantum transport of holes in 1D, 2D, and 3D devices: the k⋅p method
|
Shin, Mincheol
|
|
2011
|
10 |
1-2 |
p. 44-50
|
artikel
|
| 24 |
Self-heating in a coupled thermo-electric circuit-device model
|
Brunk, Markus
|
|
2010
|
10 |
1-2 |
p. 163-178
|
artikel
|
| 25 |
Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)
|
Takshi, Arash
|
|
2010
|
10 |
1-2 |
p. 154-162
|
artikel
|
| 26 |
Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms
|
Bendib, T.
|
|
2011
|
10 |
1-2 |
p. 210-215
|
artikel
|
| 27 |
Theoretical computation of input impedance of gap-coupled circular microstrip patch antennas loaded with shorting post
|
Kumar, Pradeep
|
|
2010
|
10 |
1-2 |
p. 195-200
|
artikel
|
| 28 |
Unification of MOS compact models with the unified regional modeling approach
|
Zhou, Xing
|
|
2011
|
10 |
1-2 |
p. 121-135
|
artikel
|
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