| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Landauer Approach to Nanoscale MOSFETs
|
M. Lundstrom
|
|
2002
|
1 |
4 |
p. 481-489
9 p.
|
artikel
|
| 2 |
A Landauer Approach to Nanoscale MOSFETs
|
Lundstrom, M.
|
|
2002
|
1 |
4 |
p. 481-489
|
artikel
|
| 3 |
Anisotropic Quantum Dots
|
J.B. Wang
|
|
2002
|
1 |
4 |
p. 491-501
11 p.
|
artikel
|
| 4 |
Anisotropic Quantum Dots
|
Wang, J.B.
|
|
2002
|
1 |
4 |
p. 491-501
|
artikel
|
| 5 |
Editorial
|
D.K. Ferry
|
|
2002
|
1 |
4 |
p. 451-451
1 p.
|
artikel
|
| 6 |
Editorial
|
Ferry, D.K.
|
|
2002
|
1 |
4 |
p. 451
|
artikel
|
| 7 |
Fullband Particle-Based Simulation of High-Field Transient Transport in IIIV Semiconductors
|
S. Wigger
|
|
2002
|
1 |
4 |
p. 475-480
6 p.
|
artikel
|
| 8 |
Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors
|
Wigger, S.
|
|
2002
|
1 |
4 |
p. 475-480
|
artikel
|
| 9 |
Molecular Conduction Paradigms and Possibilities
|
A.W. Ghosh
|
|
2002
|
1 |
4 |
p. 515-525
11 p.
|
artikel
|
| 10 |
Molecular Conduction: Paradigms and Possibilities
|
Ghosh, A.W.
|
|
2002
|
1 |
4 |
p. 515-525
|
artikel
|
| 11 |
Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling
|
H. Takeda
|
|
2002
|
1 |
4 |
p. 467-474
8 p.
|
artikel
|
| 12 |
Study of Electron Transport in SOI MOSFETs Using Monte Carlo Technique with Full-Band Modeling
|
Takeda, H.
|
|
2002
|
1 |
4 |
p. 467-474
|
artikel
|
| 13 |
The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures
|
D. Vasileska
|
|
2002
|
1 |
4 |
p. 453-465
13 p.
|
artikel
|
| 14 |
The Role of Quantization Effects on the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device Structures
|
Vasileska, D.
|
|
2002
|
1 |
4 |
p. 453-465
|
artikel
|
| 15 |
The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
|
A. Asenov
|
|
2002
|
1 |
4 |
p. 503-513
11 p.
|
artikel
|
| 16 |
The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
|
Asenov, A.
|
|
2002
|
1 |
4 |
p. 503-513
|
artikel
|
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