nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Anharmonic vibrations and grüneisen parameter of the quasi-lattice of glassy arsenic chalcogenides in the free-volume approach
|
Mel’nichenko, T. N. |
|
|
36 |
5 |
p. 496-501 |
artikel |
2 |
Chemical vapor deposition of refractory metals from fluoride gases
|
Lakhotkin, Yu. V. |
|
|
36 |
5 |
p. 454-457 |
artikel |
3 |
Copper-related deep acceptor in heat-treated Ge1-xSix single crystals
|
Azhdarov, P. G. |
|
|
36 |
5 |
p. 426-428 |
artikel |
4 |
Effect of grain-boundary stabilization on the strength, thermal conductivity, and dielectric properties of aluminum nitride
|
Ivanov, S. N. |
|
|
36 |
5 |
p. 504-507 |
artikel |
5 |
Effect of interfacial reactions on the photoelectric performance of In/CdTe/ITO and CrOxCdTe/ITO heterostructures
|
Boiko, B. T. |
|
|
36 |
5 |
p. 527-528 |
artikel |
6 |
Effect of ion irradiation on the depth profiles of microdefects in silicon
|
Demidov, E. S. |
|
|
36 |
5 |
p. 422-425 |
artikel |
7 |
Effect of pulsed laser irradiation on the photoconductivity of polycrystalline CdTe films
|
Baidullaeva, A. |
|
|
36 |
5 |
p. 444-448 |
artikel |
8 |
Effects of nonstoichiometry and doping on the curie temperature and defect structure of lithium niobate
|
Palatnikov, M. N. |
|
|
36 |
5 |
p. 489-493 |
artikel |
9 |
Electrical and optical properties of Hg1-x-yZnxMnyTe crystals
|
Frasunyak, V. M. |
|
|
36 |
5 |
p. 520-523 |
artikel |
10 |
Electrical properties of thin PbTe films on Si substrates
|
Ugai, Ya. A. |
|
|
36 |
5 |
p. 449-453 |
artikel |
11 |
Electronic density of states at the interface between silicon and lead borosilicate glass
|
Vlasov, S. I. |
|
|
36 |
5 |
p. 502-503 |
artikel |
12 |
Growth stability of silicon whiskers
|
Nebol’sin, V. A. |
|
|
36 |
5 |
p. 419-421 |
artikel |
13 |
High-pressure synthesis of metastable ternary solid solutions between tetrahedral semiconductors
|
Lyapin, A. G. |
|
|
36 |
5 |
p. 431-436 |
artikel |
14 |
High-temperature equilibrium between YBa2Cu3-xCoxO6+δ solid solutions and oxygen
|
Patrakeev, M. V. |
|
|
36 |
5 |
p. 474-478 |
artikel |
15 |
Influence ofF centers on the optical and adsorptive properties of doped ZrO2 crystals
|
Sal’nikov, V. V. |
|
|
36 |
5 |
p. 479-483 |
artikel |
16 |
Interaction between thin indium films and single-crystal ZnAs2 substrates
|
Marenkin, S. F. |
|
|
36 |
5 |
p. 429-430 |
artikel |
17 |
Kinetics and mechanism of reaction between silicon carbide and silica
|
Khrushchev, M. S. |
|
|
36 |
5 |
p. 462-464 |
artikel |
18 |
Kinetics of aluminum hydride thermal decomposition
|
Dergachev, Yu. M. |
|
|
36 |
5 |
p. 458-461 |
artikel |
19 |
Liquidus relations in the Li2WO4-Na2WO4-CaWO4 system
|
Gasanaliev, A. M. |
|
|
36 |
5 |
p. 494-495 |
artikel |
20 |
Mixed-valent states of rare-earth dopants in IV-VI semiconductors
|
Dugaev, V. K. |
|
|
36 |
5 |
p. 524-526 |
artikel |
21 |
MVO4-Ta2O5-Nb2O5 (M = Y, La) solid solutions
|
Perelyaeva, L. A. |
|
|
36 |
5 |
p. 484-488 |
artikel |
22 |
Nonstoichiometry and incongruent melting of Y-123
|
Nipan, G. D. |
|
|
36 |
5 |
p. 468-473 |
artikel |
23 |
Photo- and roentgenoluminescence of ZnSe
|
Degoda, V. Ya. |
|
|
36 |
5 |
p. 515-517 |
artikel |
24 |
Physical properties of cadmium selenide layers produced by solid-state substitution reactions
|
Makhnii, |
|
|
36 |
5 |
p. 518-519 |
artikel |
25 |
Structural changes in phosphorus-ion-implanted silicon
|
Kuznicki, Z. T. |
|
|
36 |
5 |
p. 508-510 |
artikel |
26 |
Synthesis and X-ray diffraction study of CuCr1-xVxS2
|
Al’mukhametov, R. F. |
|
|
36 |
5 |
p. 437-440 |
artikel |
27 |
Thermodynamic stability of the GaN-InN-AlN system
|
Vigdorovich, E. N. |
|
|
36 |
5 |
p. 465-467 |
artikel |
28 |
TlIn1-xYbxS2 solid solutions
|
Zarbaliev, M. M. |
|
|
36 |
5 |
p. 511-514 |
artikel |
29 |
X-ray diffraction study of Cu1.8Zn0.2Se
|
Asadov, Yu. G. |
|
|
36 |
5 |
p. 441-443 |
artikel |