| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device
|
Krishna, Raji
|
|
|
194 |
C |
p.
|
artikel
|
| 2 |
A new CsPbI2Br/CuZnSnSSe/Si tandem solar cell with higher than 32 % efficiency
|
Selmane, Naceur
|
|
|
194 |
C |
p.
|
artikel
|
| 3 |
A novel Pumice@PVA membrane with high separation efficiency for oil-water emulsion application
|
Yan, Weiguo
|
|
|
194 |
C |
p.
|
artikel
|
| 4 |
A P+ pocket doped 4H–SiC Schottky barrier FET as highly sensitive label-free biosensor
|
Jia, Hujun
|
|
|
194 |
C |
p.
|
artikel
|
| 5 |
Carbon dots-Zno/TiO2 ternary nanocomposite as a proficient material to enhance the performance of natural DSSC
|
Varghese, Meera
|
|
|
194 |
C |
p.
|
artikel
|
| 6 |
Coherent coupling of localized surface plasmons and surface plasmons in borophene-based metamaterial
|
Yizhao, Pan
|
|
|
194 |
C |
p.
|
artikel
|
| 7 |
Cutting-edge vertical tunnel FETs: GaSb/InSb heterojunction source-all-around tunnel FET with I60 of 2.73×10⁻⁴ A/μm and Sub-10 mV/dec SS
|
Ramesh, Potharaju
|
|
|
194 |
C |
p.
|
artikel
|
| 8 |
Device and circuit-level performance evaluation of DG-GNR-DMG vertical tunnel FET
|
liana, Zohming
|
|
|
194 |
C |
p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
|
194 |
C |
p.
|
artikel
|
| 10 |
Ge quantum well channel P-MOSFET for 2.45 GHz wireless weak energy harvesting
|
Wu, Yue
|
|
|
194 |
C |
p.
|
artikel
|
| 11 |
Impacts of electric gating and divacancies on optical absorption spectra of zigzag buckling silicene nanoribbons
|
Nguyen, Lam-Thuy-Duong
|
|
|
194 |
C |
p.
|
artikel
|
| 12 |
Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature
|
Li, Yun
|
|
|
194 |
C |
p.
|
artikel
|
| 13 |
Influence of low-temperature cap layer thickness on the structure and luminescence of InGaN/GaN multiple quantum wells
|
Song, Yanheng
|
|
|
194 |
C |
p.
|
artikel
|
| 14 |
Linearity and noise evaluation based analysis of extended source heterojunction double gate tunnel FET
|
Singh, Sheetal
|
|
|
194 |
C |
p.
|
artikel
|
| 15 |
Low-bandgap material engineering based TFET device for next-generation biosensor application-A comprehensive review on device structure and sensitivity
|
Reddy, Nelaturi Nagendra
|
|
|
194 |
C |
p.
|
artikel
|
| 16 |
Modeling and analysis of crosstalk induced effects in graphene-carbon nanotube composite interconnects
|
Zou, Fa
|
|
|
194 |
C |
p.
|
artikel
|
| 17 |
Numerical simulation of GaN single-crystal processing using diamond abrasives under graphene lubrication
|
Gao, Tinghong
|
|
|
194 |
C |
p.
|
artikel
|
| 18 |
Shaping the future of lighting technology with micro/nano light emitting devices
|
Wang, Ping
|
|
|
194 |
C |
p.
|
artikel
|
| 19 |
Synthesis and characterization of cubic δ–phase stabilized Bi2O3 electrolytes by triple rare earth cation doping for intermediate temperatures SOFCs
|
Balci, Murat
|
|
|
194 |
C |
p.
|
artikel
|
| 20 |
Theoretical analysis of InAs based Bi-tunable narrow band terahertz perfect absorber for thermal sensing application
|
Niharika, Neha
|
|
|
194 |
C |
p.
|
artikel
|
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