| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An analytical model of P + SiC core-shell JLFETs to analyze the performance for higher breakdown voltages applications
|
Azam, Zahied
|
|
|
191 |
C |
p.
|
article
|
| 2 |
An improved Fourier series-based analytical model for threshold voltage and sub-threshold swing in SOI junctionless FinFET
|
Mathew, Shara
|
|
|
191 |
C |
p.
|
article
|
| 3 |
Computational modelling of cylindrical-ferroelectric-dual metal-nanowire field effect transistor (C-FE-DM-NW FET) using landau equation for gate leakage minimization
|
Kaul, Aapurva
|
|
|
191 |
C |
p.
|
article
|
| 4 |
Editorial Board
|
|
|
|
191 |
C |
p.
|
article
|
| 5 |
Effect of lateral inhomogeneous AlGaN barrier layer on electronic properties of GaN HEMTs
|
Guo, Yuchen
|
|
|
191 |
C |
p.
|
article
|
| 6 |
Electric-field-controlled Schottky barriers in BSe/M2CF2 (M = Ta, W) van der Waals heterostructures: A computational study
|
Zhang, Li-Ting
|
|
|
191 |
C |
p.
|
article
|
| 7 |
Energy efficient artificial gustatory system for in-sensor computing
|
Khanday, Mudasir A.
|
|
|
191 |
C |
p.
|
article
|
| 8 |
Enhanced characteristics in AlGaN-based deep ultraviolet light-emitting diodes with interval-graded barrier superlattice electron blocking layers
|
Jiang, Zhiang
|
|
|
191 |
C |
p.
|
article
|
| 9 |
Enhancing the blue GaN laser diodes by modifying the first barrier structure and adjusting the growth conditions of quantum wells
|
Lang, Rui
|
|
|
191 |
C |
p.
|
article
|
| 10 |
GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review
|
Reddy, Nelaturi Nagendra
|
|
|
191 |
C |
p.
|
article
|
| 11 |
High-performance Schottky-barrier field-effect transistors based on two-dimensional GaN with Ag or Au contacts
|
Xie, Hai-Qing
|
|
|
191 |
C |
p.
|
article
|
| 12 |
Impact of interface traps and noise analysis on dual material graded channel CGAA FET: A device reliability
|
Mudidhe, Praveen Kumar
|
|
|
191 |
C |
p.
|
article
|
| 13 |
Microstructures and complex impedance analysis of spray pyrolysis-synthesized Ni doped ZnO for optoelectronic applications
|
Rajeh, S.
|
|
|
191 |
C |
p.
|
article
|
| 14 |
Optimization of the performance of CsPbI2Br perovskite solar cells in air by adding polyethylene-graft-maleic anhydride and its mechanism
|
He, Lei
|
|
|
191 |
C |
p.
|
article
|
| 15 |
Performance analysis of dual material control gate cavity on source electrically doped TFET biosensor for biomedical applications
|
Dharmender,
|
|
|
191 |
C |
p.
|
article
|
| 16 |
Performance assessment of Si based dual metal double gate vertical TFET biosensor
|
Das, Sourav
|
|
|
191 |
C |
p.
|
article
|
| 17 |
Performance optimization of MASnI3 perovskite solar cells: Insights into device architecture
|
Saha, Prithick
|
|
|
191 |
C |
p.
|
article
|
| 18 |
Reliability aspects in repulsive steric hindrance approach: Selectivity and sensitivity investigations
|
Bhattacharyya, Amit
|
|
|
191 |
C |
p.
|
article
|
| 19 |
SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness
|
Cao, Wei
|
|
|
191 |
C |
p.
|
article
|
| 20 |
Simulation study for anode engineering of AlGaN/GaN double-channel hybrid anode Schottky barrier diode
|
Zhang, Wentao
|
|
|
191 |
C |
p.
|
article
|
| 21 |
The enhancement of infrared characterization of passivated InAs nanowires
|
Li, Qiuyang
|
|
|
191 |
C |
p.
|
article
|
Journal description