| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of tunneling in triangular resonant tunnel diodes: Effect of barrier width, barrier height, pressure, temperature, and heterostructure strain
|
Chandrasekar, L. Bruno
|
|
|
178 |
C |
p.
|
artikel
|
| 2 |
A theoretical benchmark for the electronic, optical, and thermoelectrical characteristics of bulk and monolayer BiS2
|
Güler, E.
|
|
|
178 |
C |
p.
|
artikel
|
| 3 |
Characterization of different trap states in AlGaN/GaN MIS-HEMTs under high reverse gate stress
|
Zhang, Hao
|
|
|
178 |
C |
p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
|
178 |
C |
p.
|
artikel
|
| 5 |
Impurity-related electronic properties in GaAs quantum disk under external excitations considering the confinement parabolicity effect
|
Maouhoubi, Ibrahim
|
|
|
178 |
C |
p.
|
artikel
|
| 6 |
Influence of V/III flux ratio on type-II InAs/GaSb superlattice for very-long wavelength
|
Yang, Yichen
|
|
|
178 |
C |
p.
|
artikel
|
| 7 |
2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction
|
Qiao, Sun
|
|
|
178 |
C |
p.
|
artikel
|
| 8 |
Modulating the structural, optical, electrical and topographical features of CdSe:Bi films with annealing: Role as promising absorber to solar cells
|
Himanshu,
|
|
|
178 |
C |
p.
|
artikel
|
| 9 |
Polaron level spectrum in double-potential quantum wells
|
Han, Shuang
|
|
|
178 |
C |
p.
|
artikel
|
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