nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Annealing effect on the microstructural, optical, electrical, and thermal properties of Cu2O/TiO2/Cu2O/TiO2/Si heterojunction prepared by sol-gel technique
|
Ghrib, Taher |
|
|
164 |
C |
p. |
artikel |
2 |
A qualitative analysis of the impact of P composition in GaAs1−x P x capped InAs/GaAs quantum dot hetero-structure
|
Muchahary, Deboraj |
|
|
164 |
C |
p. |
artikel |
3 |
Band tuning in WS2 monolayer via substitutional doping
|
Falahati, Kiana |
|
|
164 |
C |
p. |
artikel |
4 |
Design and characterization of single bilayer ZnO/Al2O3 film by ultrasonically spray pyrolysis and its application in photocatalysis
|
Polat Gonullu, Meryem |
|
|
164 |
C |
p. |
artikel |
5 |
Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor
|
Ranjan, Ravi |
|
|
164 |
C |
p. |
artikel |
6 |
Design and investigation of Z n O based thin film transistors for high-speed AMLCD pixel circuit applications
|
Kumar, Binay Binod |
|
|
164 |
C |
p. |
artikel |
7 |
Editorial Board
|
|
|
|
164 |
C |
p. |
artikel |
8 |
Effect of annealing on solar blind photodetector based on β-Ga2O3 nanobelt grown by carbothermal reduction
|
Liu, Tao |
|
|
164 |
C |
p. |
artikel |
9 |
Effect of solution flow rate on the physical properties of spray pyrolyzed MoO3 thin films as silicon-based heterojunction device
|
Yusuf, Bashir |
|
|
164 |
C |
p. |
artikel |
10 |
Elucidating the electrical performance and thermal stability in14-nm FinFETs CMOS technology
|
Nasri, Faouzi |
|
|
164 |
C |
p. |
artikel |
11 |
E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study
|
Singh, Preeti |
|
|
164 |
C |
p. |
artikel |
12 |
Experimental and theoretical study on structural and electronic properties of Zn1-xMgxO from (x=0 to 0.375) in wurtzite phase
|
Aouacheria, F.Z. |
|
|
164 |
C |
p. |
artikel |
13 |
Exploring the possibility of using MWCNTs sheets as an electrode for flexible room temperature NO2 detection
|
Kumar, Rahul |
|
|
164 |
C |
p. |
artikel |
14 |
First-principles study of the structural, electronic, optical, and thermoelectric properties of the RhVZ (Z= Si, Ge, Sn)
|
Abir, Bouchrit |
|
|
164 |
C |
p. |
artikel |
15 |
GaN Schottky diode on sapphire substrate for THz frequency multiplier applications
|
Di Gioia, Giuseppe |
|
|
164 |
C |
p. |
artikel |
16 |
Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET
|
Lakhanpal, Aakanksha |
|
|
164 |
C |
p. |
artikel |
17 |
Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation
|
Suresh, V. |
|
|
164 |
C |
p. |
artikel |
18 |
Influence of correlated impurities on electrical conductivity in bilayer graphene double layer systems
|
Oanh, Le Thi Kieu |
|
|
164 |
C |
p. |
artikel |
19 |
In-plane transition metal dichalcogenide quantum wells: Effective Hamiltonian approach
|
Aliakbarpour, A. |
|
|
164 |
C |
p. |
artikel |
20 |
Investigating magneto-resistance in transition metals doped silicene nanoribbons
|
Akbarzadeh, Mojtaba |
|
|
164 |
C |
p. |
artikel |
21 |
Material removal mechanism and deformation characteristics of GaN surface at the nanoscale
|
Nguyen, Van-Thuc |
|
|
164 |
C |
p. |
artikel |
22 |
Non-conventional Fermi velocity graphene superlattices
|
Escalera Santos, G.J. |
|
|
164 |
C |
p. |
artikel |
23 |
Propagation characteristics of transverse electromagnetic waves in a finite-size metallic superlattice of two alternating Al–Mg layers
|
Al-Ali, Manal M. |
|
|
164 |
C |
p. |
artikel |
24 |
Retraction notice to “Tamm plasmon-polaritons: First experimental observation” [Superlattice. Microst., 47 (2010) 44–49]
|
Sasin, M.E. |
|
|
164 |
C |
p. |
artikel |
25 |
Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector
|
Bencherif, H. |
|
|
164 |
C |
p. |
artikel |
26 |
Study of differential shot noise in ferromagnet-insulator-superconductor graphene junction with TRSB
|
Emamipour, Hamidreza |
|
|
164 |
C |
p. |
artikel |
27 |
Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition
|
Wang, Yang |
|
|
164 |
C |
p. |
artikel |
28 |
Synthesis of CZTS kesterite by pH adjustment in order to improve the performance of CZTS thin film for photovoltaic applications
|
Shafi, Muhammad Aamir |
|
|
164 |
C |
p. |
artikel |
29 |
Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs
|
Liu, Yan |
|
|
164 |
C |
p. |
artikel |
30 |
The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure
|
Ajnef, N. |
|
|
164 |
C |
p. |
artikel |
31 |
The structural and optoelectronic properties of Cu1-xTixO (0≤x≤0.05) diodes prepared via a co-sputtering technique
|
Alshahrie, Ahmed |
|
|
164 |
C |
p. |
artikel |
32 |
Tuning electronic structures and optical properties of graphene/phosphorene heterostructure via electric field
|
Liu, Jing |
|
|
164 |
C |
p. |
artikel |