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                             32 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Annealing effect on the microstructural, optical, electrical, and thermal properties of Cu2O/TiO2/Cu2O/TiO2/Si heterojunction prepared by sol-gel technique Ghrib, Taher

164 C p.
artikel
2 A qualitative analysis of the impact of P composition in GaAs1−x P x capped InAs/GaAs quantum dot hetero-structure Muchahary, Deboraj

164 C p.
artikel
3 Band tuning in WS2 monolayer via substitutional doping Falahati, Kiana

164 C p.
artikel
4 Design and characterization of single bilayer ZnO/Al2O3 film by ultrasonically spray pyrolysis and its application in photocatalysis Polat Gonullu, Meryem

164 C p.
artikel
5 Design and investigation of field plate-based vertical GAA – β-(AlGa)2O3/Ga2O3 high electron mobility transistor Ranjan, Ravi

164 C p.
artikel
6 Design and investigation of Z n O based thin film transistors for high-speed AMLCD pixel circuit applications Kumar, Binay Binod

164 C p.
artikel
7 Editorial Board
164 C p.
artikel
8 Effect of annealing on solar blind photodetector based on β-Ga2O3 nanobelt grown by carbothermal reduction Liu, Tao

164 C p.
artikel
9 Effect of solution flow rate on the physical properties of spray pyrolyzed MoO3 thin films as silicon-based heterojunction device Yusuf, Bashir

164 C p.
artikel
10 Elucidating the electrical performance and thermal stability in14-nm FinFETs CMOS technology Nasri, Faouzi

164 C p.
artikel
11 E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study Singh, Preeti

164 C p.
artikel
12 Experimental and theoretical study on structural and electronic properties of Zn1-xMgxO from (x=0 to 0.375) in wurtzite phase Aouacheria, F.Z.

164 C p.
artikel
13 Exploring the possibility of using MWCNTs sheets as an electrode for flexible room temperature NO2 detection Kumar, Rahul

164 C p.
artikel
14 First-principles study of the structural, electronic, optical, and thermoelectric properties of the RhVZ (Z= Si, Ge, Sn) Abir, Bouchrit

164 C p.
artikel
15 GaN Schottky diode on sapphire substrate for THz frequency multiplier applications Di Gioia, Giuseppe

164 C p.
artikel
16 Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET Lakhanpal, Aakanksha

164 C p.
artikel
17 Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation Suresh, V.

164 C p.
artikel
18 Influence of correlated impurities on electrical conductivity in bilayer graphene double layer systems Oanh, Le Thi Kieu

164 C p.
artikel
19 In-plane transition metal dichalcogenide quantum wells: Effective Hamiltonian approach Aliakbarpour, A.

164 C p.
artikel
20 Investigating magneto-resistance in transition metals doped silicene nanoribbons Akbarzadeh, Mojtaba

164 C p.
artikel
21 Material removal mechanism and deformation characteristics of GaN surface at the nanoscale Nguyen, Van-Thuc

164 C p.
artikel
22 Non-conventional Fermi velocity graphene superlattices Escalera Santos, G.J.

164 C p.
artikel
23 Propagation characteristics of transverse electromagnetic waves in a finite-size metallic superlattice of two alternating Al–Mg layers Al-Ali, Manal M.

164 C p.
artikel
24 Retraction notice to “Tamm plasmon-polaritons: First experimental observation” [Superlattice. Microst., 47 (2010) 44–49] Sasin, M.E.

164 C p.
artikel
25 Role of a thin interfacial oxide layer and optimized electrodes in improving the design of a Graphene/n-Si MSM photodetector Bencherif, H.

164 C p.
artikel
26 Study of differential shot noise in ferromagnet-insulator-superconductor graphene junction with TRSB Emamipour, Hamidreza

164 C p.
artikel
27 Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition Wang, Yang

164 C p.
artikel
28 Synthesis of CZTS kesterite by pH adjustment in order to improve the performance of CZTS thin film for photovoltaic applications Shafi, Muhammad Aamir

164 C p.
artikel
29 Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs Liu, Yan

164 C p.
artikel
30 The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure Ajnef, N.

164 C p.
artikel
31 The structural and optoelectronic properties of Cu1-xTixO (0≤x≤0.05) diodes prepared via a co-sputtering technique Alshahrie, Ahmed

164 C p.
artikel
32 Tuning electronic structures and optical properties of graphene/phosphorene heterostructure via electric field Liu, Jing

164 C p.
artikel
                             32 gevonden resultaten
 
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