| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 5-bit 500MS/s flash ADC with temperature-compensated inverter-based comparators
|
Wang, Jiangpeng
|
|
|
2 |
C |
p. 1-9
|
artikel
|
| 2 |
An N -Channel Band-to-Band Tunneling Flash Memory Design Optimization
|
Ng, Wing-Kong
|
|
|
2 |
C |
p. 140-145
|
artikel
|
| 3 |
Architecture of resistive RAM with write driver
|
Dubey, Shashank Kumar
|
|
|
2 |
C |
p. 10-22
|
artikel
|
| 4 |
Corrigendum to: An Integrator Circuit Using Voltage Difference Transconductance Amplifier
|
Santhoshini, Kaza Malathi
|
|
|
2 |
C |
p. 109-114
|
artikel
|
| 5 |
Corrigendum to ’An Integrator Circuit Using Voltage Difference Transconductance Amplifier’ [Solid State Electronics Letters 1 (2019) 10-14]
|
|
|
|
2 |
C |
p. 116
|
artikel
|
| 6 |
Deep-subthreshold Schottky barrier IGZO TFT for ultra low-power applications
|
Barua, Abhijeet
|
|
|
2 |
C |
p. 59-66
|
artikel
|
| 7 |
Design and Optimization of Double Balanced Gilbert Cell Mixer in 130 nm CMOS Process
|
R․V․S․, Dr. Satyanarayana
|
|
|
2 |
C |
p. 129-139
|
artikel
|
| 8 |
Designing the Topology of a Unipolar Pulsed-DC Power Supply using the Open-source Scilab/Xcos Software for a Low-cost Plasma Etcher
|
Mandala, Samuel Husin Surya
|
|
|
2 |
C |
p. 35-43
|
artikel
|
| 9 |
Editorial
|
Müller, Dr. Raluca
|
|
|
2 |
C |
p. 115
|
artikel
|
| 10 |
Fast and energy efficient full adder circuit using 14 CNFETs
|
Saini, Jitendra Kumar
|
|
|
2 |
C |
p. 67-78
|
artikel
|
| 11 |
Impact of back gate work function for enhancement of analog/RF performance of AJDMDG Stack MOSFET
|
Basak, Arighna
|
|
|
2 |
C |
p. 117-123
|
artikel
|
| 12 |
Impacts of Indirect Wider Bandgap of Non-Toxic AlxGa1-xAs Buffer in Copper-Indium-Gallium-Diselenide Photovoltaic Cell
|
Shachi, Sadia Islam
|
|
|
2 |
C |
p. 103-108
|
artikel
|
| 13 |
Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate
|
Chang, Yang-Hua
|
|
|
2 |
C |
p. 92-97
|
artikel
|
| 14 |
Investigation on 10-nm channel-length n-type junctionless variable barrier nanowire transistor
|
Liu, Keng-Ming
|
|
|
2 |
C |
p. 44-48
|
artikel
|
| 15 |
Low power frequency doubler
|
Ng, Wing-Kong
|
|
|
2 |
C |
p. 98-102
|
artikel
|
| 16 |
Nano-pillars metasurface modelled for perfect absorption at specific wavelengths in infrared spectral regime
|
Tomescu, Roxana
|
|
|
2 |
C |
p. 146-150
|
artikel
|
| 17 |
Optical field concentrator with low absorption metasurfaces based on planar silicon nanoantennas on silica
|
Obradov, M.
|
|
|
2 |
C |
p. 55-58
|
artikel
|
| 18 |
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications
|
Zeghdar, Kamal
|
|
|
2 |
C |
p. 49-54
|
artikel
|
| 19 |
Simulation on the electric field effect of Bi thin film
|
Hong, Lee-Chi
|
|
|
2 |
C |
p. 28-34
|
artikel
|
| 20 |
SnO2 and Ni doped SnO2 /polythiophene nanocomposites for gas sensing applications
|
Pascariu, P.
|
|
|
2 |
C |
p. 85-91
|
artikel
|
| 21 |
Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage
|
Lee, Yu-Chin
|
|
|
2 |
C |
p. 23-27
|
artikel
|
| 22 |
The Simulation Study on Internal Stress in Multilayer Thermistors during Soldering Process
|
Yu, NamChol
|
|
|
2 |
C |
p. 124-128
|
artikel
|
| 23 |
Ultrashallow defects in SiC MOS capacitors
|
Pascu, Razvan
|
|
|
2 |
C |
p. 79-84
|
artikel
|
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