| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Above Room Temperature Lead Salt VECSELs
|
Rahim, M.
|
|
2010
|
3 |
2 |
p. 1145-1148
4 p.
|
artikel
|
| 2 |
Accumulation of Localized Electrons in Sn Doped InSb/Al x In1−x Sb Quantum Wells
|
Ishida, S.
|
|
2010
|
3 |
2 |
p. 1213-1218
6 p.
|
artikel
|
| 3 |
Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1−x Mn x Te band structure
|
Kowalski, B.J.
|
|
2010
|
3 |
2 |
p. 1357-1362
6 p.
|
artikel
|
| 4 |
Anisotropic spin splitting in InGaAs wire structures
|
Kunihashi, Yoji
|
|
2010
|
3 |
2 |
p. 1255-1259
5 p.
|
artikel
|
| 5 |
Anomalous magneto-transport properties in nearly gapless materials
|
Sasaki, M.
|
|
2010
|
3 |
2 |
p. 1305-1310
6 p.
|
artikel
|
| 6 |
A quest of a new eye for terahertz-waves region
|
Sakai, Kiyomi
|
|
2010
|
3 |
2 |
p. 1115-1119
5 p.
|
artikel
|
| 7 |
Band gap tunability of Type II Antimonide-based superlattices
|
Razeghi, Manijeh
|
|
2010
|
3 |
2 |
p. 1207-1212
6 p.
|
artikel
|
| 8 |
Binding energy of magneto-biexcitons in semiconductor nano-rings
|
Thu, L.M.
|
|
2010
|
3 |
2 |
p. 1149-1153
5 p.
|
artikel
|
| 9 |
Compositional Optimization of PbCaSSe in PbCaSSe/PbS/PbCaSSe DH structure
|
Abe, Seishi
|
|
2010
|
3 |
2 |
p. 1367-1371
5 p.
|
artikel
|
| 10 |
Conference Photo
|
|
|
2010
|
3 |
2 |
p. 1107-
1 p.
|
artikel
|
| 11 |
Cyclotron resonance in P-doped InSb quantum wells
|
Santos, M.B.
|
|
2010
|
3 |
2 |
p. 1201-1205
5 p.
|
artikel
|
| 12 |
Direction reversal of the surface band bending in GaAs-based dilute nitride epitaxial layers investigated by polarity of terahertz electromagnetic waves
|
Takeuchi, Hideo
|
|
2010
|
3 |
2 |
p. 1109-1113
5 p.
|
artikel
|
| 13 |
Doping Level Dependence of Transport Properties in InAsSb Quantum Wells
|
Manago, T.
|
|
2010
|
3 |
2 |
p. 1219-1224
6 p.
|
artikel
|
| 14 |
Drift instability of a 2D magnetoplasma in a periodic potential
|
Fessatidis, Vassilios
|
|
2010
|
3 |
2 |
p. 1271-1277
7 p.
|
artikel
|
| 15 |
Editorial
|
Nitta, Junsaku
|
|
2010
|
3 |
2 |
p. 1103-
1 p.
|
artikel
|
| 16 |
Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
|
Agatsuma, Yuji
|
|
2010
|
3 |
2 |
p. 1341-1344
4 p.
|
artikel
|
| 17 |
Electrical spin manipulation with Al2O3 gate insulator in InGaAs based mesoscopic ring arrays
|
Takagi, Jun
|
|
2010
|
3 |
2 |
p. 1317-1320
4 p.
|
artikel
|
| 18 |
Experimental demonstration of resonant spin-orbit interaction effect
|
Kunihashi, Yoji
|
|
2010
|
3 |
2 |
p. 1261-1266
6 p.
|
artikel
|
| 19 |
First-principles study of Nitrogen-induced band-gap reduction in III-V semiconductors
|
Ishikawa, M.
|
|
2010
|
3 |
2 |
p. 1363-1366
4 p.
|
artikel
|
| 20 |
Formation of self assembled PbTe quantum dots in CdTe on Si(111)
|
Felder, F.
|
|
2010
|
3 |
2 |
p. 1121-1125
5 p.
|
artikel
|
| 21 |
Giant transient Nernst–Ettingshausen effect in nearly gapless materials
|
Sasaki, M.
|
|
2010
|
3 |
2 |
p. 1311-1316
6 p.
|
artikel
|
| 22 |
Graphene energy loss spectroscopy: Perpendicular case
|
Fessatidis, Vassilios
|
|
2010
|
3 |
2 |
p. 1279-1285
7 p.
|
artikel
|
| 23 |
Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates
|
Toyota, H.
|
|
2010
|
3 |
2 |
p. 1345-1350
6 p.
|
artikel
|
| 24 |
Heteroepitaxial growth of InSb films on the patterned Si(001) substrate
|
Iwasugi, T.
|
|
2010
|
3 |
2 |
p. 1329-1333
5 p.
|
artikel
|
| 25 |
High-Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP Substrates
|
Asubar, Joel T.
|
|
2010
|
3 |
2 |
p. 1351-1356
6 p.
|
artikel
|
| 26 |
InSb films grown on the V-grooved Si(001) substrate with InSb bilayer
|
Mori, M.
|
|
2010
|
3 |
2 |
p. 1335-1339
5 p.
|
artikel
|
| 27 |
Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
|
Moiseev, Konstantin
|
|
2010
|
3 |
2 |
p. 1189-1193
5 p.
|
artikel
|
| 28 |
Klein tunneling in graphene under substrate electric field
|
Yamakage, A.
|
|
2010
|
3 |
2 |
p. 1243-1248
6 p.
|
artikel
|
| 29 |
Lead salt resonant cavity enhanced detector with MEMS mirror
|
Felder, F.
|
|
2010
|
3 |
2 |
p. 1127-1131
5 p.
|
artikel
|
| 30 |
Long wavelength electrically pumped GaSb-based buried tunnel junction VCSELs
|
Bachmann, Alexander
|
|
2010
|
3 |
2 |
p. 1155-1159
5 p.
|
artikel
|
| 31 |
Low-temperature scanning tunneling microscopy of selfassembled inas quantum dots grown by droplet epitaxy
|
Durand, C.
|
|
2010
|
3 |
2 |
p. 1299-1304
6 p.
|
artikel
|
| 32 |
Magneto-optical study under pulsed high magnetic fields of β - FeSi2 single crystals grown by a chemical vapor transport method
|
Hara, Y.
|
|
2010
|
3 |
2 |
p. 1139-1143
5 p.
|
artikel
|
| 33 |
Measurement of spin polarization in p - In0.96Mn0.04As using Andreev reflection spectroscopy
|
Akazaki, Tatsushi
|
|
2010
|
3 |
2 |
p. 1291-1294
4 p.
|
artikel
|
| 34 |
Micro-twin Defects in InSb/AlInSb layers grown on (001) GaAs ∼ Application of the 〈 1 ̄ 16 〉 -directional TEM analysis ∼
|
Mishima, T.D.
|
|
2010
|
3 |
2 |
p. 1373-1377
5 p.
|
artikel
|
| 35 |
Optical mapping of the boundary of a two-dimensional electron gas by a nearfield optical microscopy
|
Ito, H.
|
|
2010
|
3 |
2 |
p. 1171-1175
5 p.
|
artikel
|
| 36 |
Oscillatory quantum interference effects in narrow-gap semiconductor heterostructures
|
Lillianfeld, R.B.
|
|
2010
|
3 |
2 |
p. 1231-1236
6 p.
|
artikel
|
| 37 |
Photoluminescence spectroscopy of the low-density two-dimensional electron system in electric fields
|
Yamaguchi, M.
|
|
2010
|
3 |
2 |
p. 1183-1188
6 p.
|
artikel
|
| 38 |
Position dependent optical effect on the transport properties of S-Sm-S junctions
|
Tsumura, K.
|
|
2010
|
3 |
2 |
p. 1177-1181
5 p.
|
artikel
|
| 39 |
Probe of interband relaxations of photo-excited carriers and spins in InSb based quantum wells
|
Bhowmick, M.
|
|
2010
|
3 |
2 |
p. 1161-1165
5 p.
|
artikel
|
| 40 |
Quantum interference and Kondo effects in an Aharonov–Bohm–Casher interferometer containing a laterally coupled double quantum dot
|
Kubo, T.
|
|
2010
|
3 |
2 |
p. 1225-1230
6 p.
|
artikel
|
| 41 |
Rectangular model of a ballistic spin interferometer in (001) InGaAs/InAlAs quantum wells
|
Koga, Takaaki
|
|
2010
|
3 |
2 |
p. 1325-1328
4 p.
|
artikel
|
| 42 |
Room temperature interband cascade lasers
|
Kim, M.
|
|
2010
|
3 |
2 |
p. 1195-1200
6 p.
|
artikel
|
| 43 |
Semimetallic properties of SnTe/PbSe type-II superlattices
|
Ishida, Akihiro
|
|
2010
|
3 |
2 |
p. 1295-1298
4 p.
|
artikel
|
| 44 |
Spin and phase coherence times in Te doped InSb thin films
|
Kallaher, R.L.
|
|
2010
|
3 |
2 |
p. 1237-1242
6 p.
|
artikel
|
| 45 |
Spin dependent electronic structure and level crossings as a function of magnetic field in InAs nanowire
|
Jin, S.Q.
|
|
2010
|
3 |
2 |
p. 1321-1324
4 p.
|
artikel
|
| 46 |
Spin-polarization in InAs/AlSb double barrier resonant tunneling structures: influence of barrier material and interface structure
|
Souma, Satofumi
|
|
2010
|
3 |
2 |
p. 1287-1290
4 p.
|
artikel
|
| 47 |
14th International Conference on Narrow Gap Semiconductors and Systems (NGS2 -14)
|
|
|
2010
|
3 |
2 |
p. 1105-
1 p.
|
artikel
|
| 48 |
Tightly bound 3D quantum dot energy states in a magnetic field
|
Morgenstern Horing, Norman J.
|
|
2010
|
3 |
2 |
p. 1267-1270
4 p.
|
artikel
|
| 49 |
Time resolved spectroscopy of InMnAs using differential transmission technique in mid-infrared
|
Bhowmick, M.
|
|
2010
|
3 |
2 |
p. 1167-1170
4 p.
|
artikel
|
| 50 |
Unusual diamagnetism in semiconductor nano-objects
|
Thu, L.M.
|
|
2010
|
3 |
2 |
p. 1133-1137
5 p.
|
artikel
|
| 51 |
Weak localization properties of graphene with intrinsic and Rashba spin-orbit couplings
|
Imura, Ken-Ichiro
|
|
2010
|
3 |
2 |
p. 1249-1254
6 p.
|
artikel
|
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