| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of crystal defects by transmission electron microscopy
|
Armigliato, A.
|
|
1979
|
4 |
3 |
p. 453-471
19 p.
|
artikel
|
| 2 |
Application of Monte Carlo method to the electron probe microanalysis of thin films
|
Desalvo, A.
|
|
1979
|
4 |
3 |
p. 495-506
12 p.
|
artikel
|
| 3 |
Applications of Mössbauer spectroscopy to the study of electronic materials
|
Albanese, G.
|
|
1979
|
4 |
3 |
p. 473-494
22 p.
|
artikel
|
| 4 |
Correlation of electrical measurements with chemical analysis in silver-doped lead telluride
|
Fano, V.
|
|
1979
|
4 |
3 |
p. 507-512
6 p.
|
artikel
|
| 5 |
Crystal growth mechanisms: Interface kinetics
|
Aquilano, D.
|
|
1979
|
4 |
3 |
p. 237-261
25 p.
|
artikel
|
| 6 |
Current status of growth processes for solar grade silicon
|
Pizzini, S.
|
|
1979
|
4 |
3 |
p. 335-375
41 p.
|
artikel
|
| 7 |
Electronic set-up for programming oscillating temperature profiles in vapour phase crystal growth
|
Scalvini, M.
|
|
1979
|
4 |
3 |
p. 317-321
5 p.
|
artikel
|
| 8 |
Epitaxial technologies in the growth of semiconductors for device applications
|
Franchi, S.
|
|
1979
|
4 |
3 |
p. 529-547
19 p.
|
artikel
|
| 9 |
Evaluation of the upper limits of resistivity achievable in large diameter CZ crystals
|
Domenici, M.
|
|
1979
|
4 |
3 |
p. 445-451
7 p.
|
artikel
|
| 10 |
Growth and characterization of CuGaxIn1−xSe2 thin films for solar cells
|
Nur Salad, A
|
|
1979
|
4 |
3 |
p. 549-555
7 p.
|
artikel
|
| 11 |
Growth and properties of chlorine doped CdTe single crystals
|
Mancini, A.M.
|
|
1979
|
4 |
3 |
p. 411-418
8 p.
|
artikel
|
| 12 |
Influence of iodine doping on the electrical properties of GaSe
|
Augelli, V.
|
|
1979
|
4 |
3 |
p. 429-436
8 p.
|
artikel
|
| 13 |
Interface kinetics and vapour phase mass transport in horizontal closed tube CVD systems
|
Paorici, C.
|
|
1979
|
4 |
3 |
p. 301-307
7 p.
|
artikel
|
| 14 |
Laser annealing of nitrogen and oxigen ion implanted silicon layers
|
Della Mea, G.
|
|
1979
|
4 |
3 |
p. 565-569
5 p.
|
artikel
|
| 15 |
Low resistivity single crystal CdZnS films
|
Franzosi, P.
|
|
1979
|
4 |
3 |
p. 557-563
7 p.
|
artikel
|
| 16 |
Nucleation and morphology control in semiconductor AIBIIIX2 VI type crystals grown by closed-tube CVD
|
Curti, M.
|
|
1979
|
4 |
3 |
p. 309-315
7 p.
|
artikel
|
| 17 |
Oxygen striations in czochralski silicon crystals
|
Domenici, M.
|
|
1979
|
4 |
3 |
p. 291-300
10 p.
|
artikel
|
| 18 |
Photoelectronic techniques for material diagnostic
|
Rizzo, A.
|
|
1979
|
4 |
3 |
p. 379-410
32 p.
|
artikel
|
| 19 |
Preface
|
Paorici, Carlo
|
|
1979
|
4 |
3 |
p. 231-233
3 p.
|
artikel
|
| 20 |
Recovery of radiation damage in neutron transmutation doped silicon by isochronal and isothermal annealing
|
Mattera, A.
|
|
1979
|
4 |
3 |
p. 513-526
14 p.
|
artikel
|
| 21 |
Space-charge-limited-currents in iodine doped GaSe single crystals
|
De Blasi, C.
|
|
1979
|
4 |
3 |
p. 437-444
8 p.
|
artikel
|
| 22 |
Structure and properties of the interfaces and crystal growth: The model approach
|
Mutaftschiev, B.
|
|
1979
|
4 |
3 |
p. 263-290
28 p.
|
artikel
|
| 23 |
Thermally stimulated currents in GaSxSe1−x Solid solutions
|
De Blasi, C.
|
|
1979
|
4 |
3 |
p. 419-427
9 p.
|
artikel
|
| 24 |
Thermodynamical study of the GaInAsPHClH2 heterogeneous system
|
Pelosi, C.
|
|
1979
|
4 |
3 |
p. 323-333
11 p.
|
artikel
|
| 25 |
Thin film heterojunction solar cells
|
Romeo, N.
|
|
1979
|
4 |
3 |
p. 571-590
20 p.
|
artikel
|
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