| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Amorphous solid and bipolaronic ground-state
|
Chakraverty, B.K.
|
|
1982
|
8 |
1-3 |
p. 71-79
9 p.
|
artikel
|
| 2 |
A role of the lowest unoccupied molecular orbital of the local structure of amorphous materials
|
Tanaka, Kazuyoshi
|
|
1982
|
8 |
1-3 |
p. 9-13
5 p.
|
artikel
|
| 3 |
A structural interpretation of the infrared absorption spectra of a-Si:H:O alloys
|
Lucovsky, G.
|
|
1982
|
8 |
1-3 |
p. 165-175
11 p.
|
artikel
|
| 4 |
Chemical bonding in amorphous semiconductors
|
Grigorovici, R.
|
|
1982
|
8 |
1-3 |
p. 177-185
9 p.
|
artikel
|
| 5 |
Chemical modification of amorphous arsenic
|
Davis, E.A.
|
|
1982
|
8 |
1-3 |
p. 341-348
8 p.
|
artikel
|
| 6 |
Coulomb interactions in Anderson localized disordered systems
|
Pollak, M.
|
|
1982
|
8 |
1-3 |
p. 81-89
9 p.
|
artikel
|
| 7 |
Defects in amorphous III-V compounds
|
Theye, Marie-Luce
|
|
1982
|
8 |
1-3 |
p. 331-340
10 p.
|
artikel
|
| 8 |
Defects in amorphous Si-N films prepared by RF sputtering
|
Shimizu, Tatsuo
|
|
1982
|
8 |
1-3 |
p. 311-317
7 p.
|
artikel
|
| 9 |
Dependence of hydrogen evolution from a-Si: H on boron doping and substrate potential
|
Chen, Kun-ji
|
|
1982
|
8 |
1-3 |
p. 205-214
10 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
1982
|
8 |
1-3 |
p. ii-
1 p.
|
artikel
|
| 11 |
Effects of prolonged illumination on the properties of hydrogenated amorphous silicon
|
Carlson, D.E.
|
|
1982
|
8 |
1-3 |
p. 129-140
12 p.
|
artikel
|
| 12 |
Electronic correlations and transient effects in disordered systems
|
Adler, David
|
|
1982
|
8 |
1-3 |
p. 53-69
17 p.
|
artikel
|
| 13 |
Electronic properties of doped glow-discharge amorphous germanium
|
Hauschildt, D.
|
|
1982
|
8 |
1-3 |
p. 319-330
12 p.
|
artikel
|
| 14 |
EXAFS investigation of dilute Cu impurities in amorphous As2Se3
|
Laderman, S.
|
|
1982
|
8 |
1-3 |
p. 15-22
8 p.
|
artikel
|
| 15 |
Index of refraction of the glassy As x Te100−x system
|
Závětová, M.
|
|
1982
|
8 |
1-3 |
p. 33-39
7 p.
|
artikel
|
| 16 |
Influence of interface states on field effect and capacitance-voltage characteristics of metal/oxide/a-Si:H structures
|
Suzuki, Tohru
|
|
1982
|
8 |
1-3 |
p. 285-292
8 p.
|
artikel
|
| 17 |
Light-induced metastable effects in hydrogenated amorphous silicon
|
Pankove, J.I.
|
|
1982
|
8 |
1-3 |
p. 141-151
11 p.
|
artikel
|
| 18 |
Luminescence fatigue and light-induced electron spin resonance in amorphous silicon-hydrogen alloys
|
Hirabayashi, I.
|
|
1982
|
8 |
1-3 |
p. 153-158
6 p.
|
artikel
|
| 19 |
Modification of vitreous As2Se3
|
Kolomiets, B.T.
|
|
1982
|
8 |
1-3 |
p. 1-8
8 p.
|
artikel
|
| 20 |
Optical absorption above the optical gap of amorphous silicon hydride
|
Cody, G.D.
|
|
1982
|
8 |
1-3 |
p. 231-240
10 p.
|
artikel
|
| 21 |
Optical properties of a-Si:H and a-SixC1−x:H films prepared by glow-discharge deposition
|
Nitta, S.
|
|
1982
|
8 |
1-3 |
p. 249-257
9 p.
|
artikel
|
| 22 |
Optical properties of disordered silicon in the range 1–10 eV
|
Jan, G.-J.
|
|
1982
|
8 |
1-3 |
p. 241-248
8 p.
|
artikel
|
| 23 |
Paramagnetism in X-irradiated chalcogenide glasses and crystals
|
Taylor, P.C.
|
|
1982
|
8 |
1-3 |
p. 23-31
9 p.
|
artikel
|
| 24 |
PAS study of gap-state profiles of P-doped and undoped a-Si:H
|
Tanaka, Kazunobu
|
|
1982
|
8 |
1-3 |
p. 277-283
7 p.
|
artikel
|
| 25 |
Preface
|
Mott, Sir Nevill
|
|
1982
|
8 |
1-3 |
p. vii-x
nvt p.
|
artikel
|
| 26 |
Random network structures
|
Weaire, D.
|
|
1982
|
8 |
1-3 |
p. 159-163
5 p.
|
artikel
|
| 27 |
Recent advances in amorphous silicon solar cells
|
Hamakawa, Yoshihiro
|
|
1982
|
8 |
1-3 |
p. 101-121
21 p.
|
artikel
|
| 28 |
Schottky revisited
|
Henisch, H.K.
|
|
1982
|
8 |
1-3 |
p. 91-100
10 p.
|
artikel
|
| 29 |
Some problems in determination of gap-state density in amorphous silicon
|
Sasaki, Tadashi
|
|
1982
|
8 |
1-3 |
p. 293-302
10 p.
|
artikel
|
| 30 |
States in the gap of amorphous hydrogenated silicon
|
Guha, S.
|
|
1982
|
8 |
1-3 |
p. 269-276
8 p.
|
artikel
|
| 31 |
Studies of the band tails in a-Si:H by photomodulation spectroscopy
|
Tauc, J.
|
|
1982
|
8 |
1-3 |
p. 259-267
9 p.
|
artikel
|
| 32 |
Studies of thin-film growth of sputtered hydrogenated amorphous silicon
|
Moustakas, T.D.
|
|
1982
|
8 |
1-3 |
p. 187-204
18 p.
|
artikel
|
| 33 |
The relationship between transient and steady-state photoconductivity in amorphous semiconductors
|
Kastner, M.A
|
|
1982
|
8 |
1-3 |
p. 41-52
12 p.
|
artikel
|
| 34 |
The residual voltage in fast electrophotography of a-SiHx
|
Oda, Shunri
|
|
1982
|
8 |
1-3 |
p. 123-128
6 p.
|
artikel
|
| 35 |
The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane
|
Hey, P.
|
|
1982
|
8 |
1-3 |
p. 215-230
16 p.
|
artikel
|
| 36 |
What is the majority carrier drift mobility in a-Si alloys?
|
Silver, M.
|
|
1982
|
8 |
1-3 |
p. 303-309
7 p.
|
artikel
|
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