nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Contact resistivity of TiN on p+-Si and n+-Si
|
Finetti, Manuela |
|
1983 |
9 |
3 |
p. 179-183 5 p. |
artikel |
2 |
Degradation of the performance of Cu2S/CdS solar cells due to a two-way solid state diffusion process
|
Moitra, K. |
|
1983 |
9 |
3 |
p. 215-228 14 p. |
artikel |
3 |
Influence of carbon and hydrogen segregation on the electrical properties of grain boundaries in polycrystalline silicon sheets
|
Rallon, Ottilia |
|
1983 |
9 |
3 |
p. 149-157 9 p. |
artikel |
4 |
Low cost process for ohmic contacts on GaAs/Ga 1−x Al x As concentrator solar cells based on palladium and gold deposition
|
Flores, C. |
|
1983 |
9 |
3 |
p. 169-177 9 p. |
artikel |
5 |
On the effective minority carrier diffusion length of polycrystalline silicon solar cells
|
Kumari, S. |
|
1983 |
9 |
3 |
p. 209-214 6 p. |
artikel |
6 |
Optimization of substrate thickness for interdigitated back contact silicon solar cells
|
Verlinden, P. |
|
1983 |
9 |
3 |
p. 247-256 10 p. |
artikel |
7 |
Photoelectrochemical solar cells: Temperature control by cell design and its effects on the performance of cadmium chalcogenide-polysulphide systems
|
Müller, Norbert |
|
1983 |
9 |
3 |
p. 229-245 17 p. |
artikel |
8 |
Simple method for the determination of the minority carrier diffusion length in metal/insulator/semiconductor solar cells
|
Niedźwiedź, S. |
|
1983 |
9 |
3 |
p. 257-260 4 p. |
artikel |
9 |
Stability of Pd/Nb2O5/amorphous hydrogenated silicon solar cells
|
Premachandran, V. |
|
1983 |
9 |
3 |
p. 203-208 6 p. |
artikel |
10 |
The CdSCuInSe2 solar cell interface: Thermodynamic considerations
|
Wager, J.F. |
|
1983 |
9 |
3 |
p. 159-168 10 p. |
artikel |
11 |
X-ray photoelectron spectroscopy studies of copper diffusion behaviour and related degradation phenomena in thin film CdS:Cu2S solar cells
|
Rastogi, A.C. |
|
1983 |
9 |
3 |
p. 185-202 18 p. |
artikel |