| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accuracy of analytical expressions for solar cell fill factors
|
Green, Martin A.
|
|
1982
|
7 |
3 |
p. 337-340
4 p.
|
artikel
|
| 2 |
AlSi peaked Schottky barriers
|
Srivastava, G.P.
|
|
1982
|
7 |
3 |
p. 209-218
10 p.
|
artikel
|
| 3 |
A model for the collection of minority carriers generated in the depletion region of a Schottky barrier solar cell
|
Soukup, R.J.
|
|
1982
|
7 |
3 |
p. 297-310
14 p.
|
artikel
|
| 4 |
A semiconductor-insulator-semiconductor CdOSiO2Si solar cell
|
Shih, I.
|
|
1982
|
7 |
3 |
p. 327-330
4 p.
|
artikel
|
| 5 |
Author index
|
|
|
1982
|
7 |
3 |
p. 341-
1 p.
|
artikel
|
| 6 |
Effect of an SiC layer on p-i-n amorphous silicon solar cells
|
Haneman, D.
|
|
1982
|
7 |
3 |
p. 291-295
5 p.
|
artikel
|
| 7 |
Effect of grain boundaries on the minority carrier diffusion length in InP solar cells
|
Tarricone, L.
|
|
1982
|
7 |
3 |
p. 281-290
10 p.
|
artikel
|
| 8 |
Etude de panneaux solaires concentrateurs à produits fluorescents
|
Blumenfeld, Henry
|
|
1982
|
7 |
3 |
p. 311-325
15 p.
|
artikel
|
| 9 |
Experimental and theoretical studies of Cu2O solar cells
|
Olsen, L.C.
|
|
1982
|
7 |
3 |
p. 247-279
33 p.
|
artikel
|
| 10 |
High efficiency p+-n-n+ back-surface field silicon solar cells with very large short-circuit current densities
|
Nijs, J.
|
|
1982
|
7 |
3 |
p. 331-336
6 p.
|
artikel
|
| 11 |
Photoelectrochemical behaviour of electrodeposited and pressure-sintered Bi2S3, Bi2S3PbS and Bi2S3Ag2S semiconductor electrodes
|
Mahapatra, P.K.
|
|
1982
|
7 |
3 |
p. 225-232
8 p.
|
artikel
|
| 12 |
Role of crystallites in the performance of polycrystalline solar cells
|
Saha, H.
|
|
1982
|
7 |
3 |
p. 233-246
14 p.
|
artikel
|
| 13 |
Subject index
|
|
|
1982
|
7 |
3 |
p. 342-345
4 p.
|
artikel
|
| 14 |
Variation in the diode quality factor for metal-insulator-n-semiconductor solar cells
|
Sen, K.
|
|
1982
|
7 |
3 |
p. 219-223
5 p.
|
artikel
|
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