nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Application of electrochemical methods in Ga1−x Al xAs/GaAs solar cell fabrication
|
Przyluski, J. |
|
1981 |
3 |
4 |
p. 369-374 6 p. |
artikel |
2 |
A review of and impressions from the 3rd european communities conference on photovoltaic solar energy, Cannes, October 27 – 31, 1980
|
Coutts, T.J. |
|
1981 |
3 |
4 |
p. 375-386 12 p. |
artikel |
3 |
Author index
|
|
|
1981 |
3 |
4 |
p. 387- 1 p. |
artikel |
4 |
Editors' Comments
|
Coutts, T.J. |
|
1981 |
3 |
4 |
p. 287- 1 p. |
artikel |
5 |
Growth patterns of chemiplated Cu2−x S layers in CdS/Cu2S thin film solar cells
|
Salkalachen, Saji |
|
1981 |
3 |
4 |
p. 341-353 13 p. |
artikel |
6 |
Heavy-doping effects in silicon: The role of Auger processes
|
Redfield, David |
|
1981 |
3 |
4 |
p. 313-326 14 p. |
artikel |
7 |
High efficiency bifacial back surface field solar cells
|
Cuevas, A. |
|
1981 |
3 |
4 |
p. 337-340 4 p. |
artikel |
8 |
Module and solar cell values as a function of efficiency
|
Wolf, M. |
|
1981 |
3 |
4 |
p. 327-336 10 p. |
artikel |
9 |
Subject index
|
|
|
1981 |
3 |
4 |
p. 389-392 4 p. |
artikel |
10 |
Theoretical bases of photovoltaic concentrators for extended light sources
|
Luque, Antonio |
|
1981 |
3 |
4 |
p. 355-368 14 p. |
artikel |
11 |
The physics of heavily doped n+-p junction solar cells
|
Lanyon, H.P.D. |
|
1981 |
3 |
4 |
p. 289-311 23 p. |
artikel |