| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comparison of the errors in determining the conversion efficiency of multijunction solar cells by various methods
|
Emery, K.
|
|
1988
|
24 |
3-4 |
p. 371-380
10 p.
|
article
|
| 2 |
Amorphous silicon germanium alloy film deposition with in situ plasma diagnostics
|
Shing, Y.H.
|
|
1988
|
24 |
3-4 |
p. 353-362
10 p.
|
article
|
| 3 |
Analysis and characterization of thin films: A tutorial
|
Kazmerski, Lawrence L.
|
|
1988
|
24 |
3-4 |
p. 387-418
32 p.
|
article
|
| 4 |
Author index
|
|
|
1988
|
24 |
3-4 |
p. 419-420
2 p.
|
article
|
| 5 |
Characterization of large area devices by an improved constant capacitance voltage transient technique
|
Shiau, Jeng-Jye
|
|
1988
|
24 |
3-4 |
p. 363-369
7 p.
|
article
|
| 6 |
Deep level transient spectroscopy studies of n-CdTe and p-CdTe
|
Lee, W.I.
|
|
1988
|
24 |
3-4 |
p. 279-286
8 p.
|
article
|
| 7 |
EBIC analysis of CuInSe2 devices
|
Chesarek, W.
|
|
1988
|
24 |
3-4 |
p. 263-270
8 p.
|
article
|
| 8 |
Electroreflectance and photoreflectance of GaInP
|
Kurtz, S.R.
|
|
1988
|
24 |
3-4 |
p. 307-312
6 p.
|
article
|
| 9 |
Fundamental studies of amorphous silicon materials at the solar energy research institute
|
Crandall, Richard S.
|
|
1988
|
24 |
3-4 |
p. 237-248
12 p.
|
article
|
| 10 |
Ion-beam hydrogenation of amorphous silicon
|
Tsuo, Y.S.
|
|
1988
|
24 |
3-4 |
p. 249-256
8 p.
|
article
|
| 11 |
Junction capacitance studies of deep defects in undoped hydrogenated amorphous silicon
|
Cohen, J.D.
|
|
1988
|
24 |
3-4 |
p. 287-297
11 p.
|
article
|
| 12 |
Measurement and characterization of thin film module reliability
|
Ross Jr., R.G.
|
|
1988
|
24 |
3-4 |
p. 271-278
8 p.
|
article
|
| 13 |
Non-intrusive, non-destructive photoabsorption voltage-decay measurements of amorphous silicon modules for performance and degradation characterization
|
Longrigg, P.
|
|
1988
|
24 |
3-4 |
p. 329-337
9 p.
|
article
|
| 14 |
Open-circuit voltage decay — measures of amorphous silicon material stability and module degradation
|
Berry, W.B.
|
|
1988
|
24 |
3-4 |
p. 321-328
8 p.
|
article
|
| 15 |
Optical and transport properties of a-Si:H,F/a-Si,Ge:H,F superlattices
|
Conde, J.P.
|
|
1988
|
24 |
3-4 |
p. 223-235
13 p.
|
article
|
| 16 |
Optical spectroscopy of hydrogenated amorphous silicon
|
Pankove, Jacques I.
|
|
1988
|
24 |
3-4 |
p. 299-305
7 p.
|
article
|
| 17 |
Outdoor stability performance of amorphous silicon modules
|
Mrig, Laxmi
|
|
1988
|
24 |
3-4 |
p. 381-386
6 p.
|
article
|
| 18 |
Photoluminescence absorption spectroscopy in a-Si:H and related alloys
|
Ranganathan, Radha
|
|
1988
|
24 |
3-4 |
p. 257-262
6 p.
|
article
|
| 19 |
Photoluminescence lifetime in heterojunctions
|
Ahrenkiel, R.K.
|
|
1988
|
24 |
3-4 |
p. 339-352
14 p.
|
article
|
| 20 |
Spectral solar radiation data and measurements
|
Riordan, C.
|
|
1988
|
24 |
3-4 |
p. 313-320
8 p.
|
article
|
| 21 |
Subject index
|
|
|
1988
|
24 |
3-4 |
p. 421-423
3 p.
|
article
|
| 22 |
The origin of metastable states in a-Si:H
|
Street, R.A.
|
|
1988
|
24 |
3-4 |
p. 211-221
11 p.
|
article
|
Journal description