| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of different module configurations for multi-band-gap solar cells
|
Gee, James M.
|
|
1988
|
24 |
1-2 |
p. 147-155
9 p.
|
artikel
|
| 2 |
Ametek's CdTe solar module development program
|
Meyers, Peter V.
|
|
1988
|
24 |
1-2 |
p. 35-42
8 p.
|
artikel
|
| 3 |
Application of GaP/Si heteroepitaxy to cascade solar cells
|
Beck, E.E.
|
|
1988
|
24 |
1-2 |
p. 205-209
5 p.
|
artikel
|
| 4 |
Device physics of crystalline solar cells
|
Lundstrom, Mark S.
|
|
1988
|
24 |
1-2 |
p. 91-102
12 p.
|
artikel
|
| 5 |
Device processing and analysis of high efficiency GaAs cells
|
Tobin, S.P.
|
|
1988
|
24 |
1-2 |
p. 103-115
13 p.
|
artikel
|
| 6 |
Device quality thin films of CuInSe2 by a one-step electrodeposition process
|
Pern, F.J.
|
|
1988
|
24 |
1-2 |
p. 81-90
10 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1988
|
24 |
1-2 |
p. iii-
1 p.
|
artikel
|
| 8 |
Effects of composition and substrate temperature on the electro-optical properties of thin-film CuInSe2 and CuGaSe2
|
Tuttle, J.
|
|
1988
|
24 |
1-2 |
p. 67-79
13 p.
|
artikel
|
| 9 |
Efficient thin film cadmium telluride heterojunction solar cells
|
chu, T.L.
|
|
1988
|
24 |
1-2 |
p. 27-34
8 p.
|
artikel
|
| 10 |
Foreword
|
Hulstrom, Roland
|
|
1988
|
24 |
1-2 |
p. vii-
1 p.
|
artikel
|
| 11 |
Growth and characterization of CdMnTe and CdZnTe polycrystalline thin films for solar cells
|
Rohatgi, A.
|
|
1988
|
24 |
1-2 |
p. 185-194
10 p.
|
artikel
|
| 12 |
In memoriam
|
Kazmerski, Lawrence L.
|
|
1988
|
24 |
1-2 |
p. v-vi
nvt p.
|
artikel
|
| 13 |
Junction characteristics of CdS/CdTe solar cells
|
Albright, S.P.
|
|
1988
|
24 |
1-2 |
p. 43-56
14 p.
|
artikel
|
| 14 |
Low-temperature characteristics of CdS/CuInSe2 diodes
|
Noufi, R.
|
|
1988
|
24 |
1-2 |
p. 11-17
7 p.
|
artikel
|
| 15 |
Micro-defect effects on minority carrier lifetime in high purity dislocation-free silicon single crystals
|
Wang, T.H.
|
|
1988
|
24 |
1-2 |
p. 135-145
11 p.
|
artikel
|
| 16 |
Optoelectronic properties and plasma diagnostics of high deposition rate a-Si:H films using disilane
|
Bhat, P.K.
|
|
1988
|
24 |
1-2 |
p. 57-65
9 p.
|
artikel
|
| 17 |
Passivation in silicon
|
Corbett, J.W.
|
|
1988
|
24 |
1-2 |
p. 127-133
7 p.
|
artikel
|
| 18 |
Progress on high efficiency thin film solar cells
|
Morel, D.L.
|
|
1988
|
24 |
1-2 |
p. 157-164
8 p.
|
artikel
|
| 19 |
Progress toward high efficiency multijunction cells and submodules at Solarex
|
Carlson, D.E.
|
|
1988
|
24 |
1-2 |
p. 165-169
5 p.
|
artikel
|
| 20 |
Reactive sputtered CuInSe2
|
Thornton, John A.
|
|
1988
|
24 |
1-2 |
p. 1-9
9 p.
|
artikel
|
| 21 |
Recent developments in multijunction solar cell research
|
Lewis, C.R.
|
|
1988
|
24 |
1-2 |
p. 171-183
13 p.
|
artikel
|
| 22 |
The reactions of triethylindium and trimethylgallium with arsine gas
|
Agnello, Paul D.
|
|
1988
|
24 |
1-2 |
p. 117-126
10 p.
|
artikel
|
| 23 |
Vacuum deposition processes for CuInSe2 and CuInGaSe2 based solar cells
|
Devaney, W.E.
|
|
1988
|
24 |
1-2 |
p. 19-26
8 p.
|
artikel
|
| 24 |
Why the photoconductivity decreases in a-SiC:H and a-SiGe:H when the amount of alloying increases
|
Mahan, A.H.
|
|
1988
|
24 |
1-2 |
p. 195-203
9 p.
|
artikel
|
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