nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Amorphous alloy tandem junction solar cells
|
Dalal, Vikram |
|
1987 |
21 |
1-4 |
p. 451- 1 p. |
artikel |
2 |
An approach to the optimal design of p-n heterojunction solar cells using thin film organic semiconductors
|
Panayotatos, P. |
|
1987 |
21 |
1-4 |
p. 301-311 11 p. |
artikel |
3 |
Application of metal-organic chemical vapor deposition techniques to CdTe/In2O3:Sn thin film solar cells
|
Schafer, D.E. |
|
1987 |
21 |
1-4 |
p. 454- 1 p. |
artikel |
4 |
Atmospheric optical calibration system for outdoor photovoltaic measurements
|
Hulstrom, R. |
|
1987 |
21 |
1-4 |
p. 329-335 7 p. |
artikel |
5 |
Auger line shape analysis of hydrogenated amorphous silicon
|
Burnham, N.A. |
|
1987 |
21 |
1-4 |
p. 135-140 6 p. |
artikel |
6 |
Author index
|
|
|
1987 |
21 |
1-4 |
p. 461-462 2 p. |
artikel |
7 |
Bonding defects in amorphous silicon alloys
|
Cook Jr., J.W. |
|
1987 |
21 |
1-4 |
p. 387-397 11 p. |
artikel |
8 |
CdTe/CuInSe2 multijunction solar cells
|
Meakin, J.D. |
|
1987 |
21 |
1-4 |
p. 451- 1 p. |
artikel |
9 |
CdZnTe for a wide band gap all thin film solar cell
|
Hay, Kenneth A. |
|
1987 |
21 |
1-4 |
p. 454- 1 p. |
artikel |
10 |
Continuous-mode fabrication of amorphous silicon solar cells on polyimide substrates
|
Vernstrom, G.D |
|
1987 |
21 |
1-4 |
p. 141-146 6 p. |
artikel |
11 |
Criteria for the design of high efficiency thin film solar cells: Theory and practice
|
Rothwarf, Allen |
|
1987 |
21 |
1-4 |
p. 1-14 14 p. |
artikel |
12 |
Deep level study of CdS/CuInSe2 solar cells
|
Ramanathan, V. |
|
1987 |
21 |
1-4 |
p. 454-455 2 p. |
artikel |
13 |
Defects in hydrogenated amorphous silicon and related alloys
|
Taylor, P.C. |
|
1987 |
21 |
1-4 |
p. 452- 1 p. |
artikel |
14 |
Device aspects of multijunction photovoltaic module research
|
Mitchell, K.W. |
|
1987 |
21 |
1-4 |
p. 127-134 8 p. |
artikel |
15 |
Editorial Board
|
|
|
1987 |
21 |
1-4 |
p. iii- 1 p. |
artikel |
16 |
Effects of dopant and impurity incorporation on metastable light-induced defect formation
|
Jackson, W.B. |
|
1987 |
21 |
1-4 |
p. 431-438 8 p. |
artikel |
17 |
Electronic structure and stability of semiconductor alloys
|
Zunger, Alex |
|
1987 |
21 |
1-4 |
p. 460- 1 p. |
artikel |
18 |
Electro-optical properties of thin indium tin oxide films: Limitations on performance
|
Dhere, R.G. |
|
1987 |
21 |
1-4 |
p. 281-290 10 p. |
artikel |
19 |
Evidence for microstructure in glow discharge hydrogenated amorphous Si-C alloys
|
Mahan, A.H. |
|
1987 |
21 |
1-4 |
p. 117-126 10 p. |
artikel |
20 |
Fundamental processes in sputtering of relevance to the fabrication of thin film solar cells
|
Thornton, John A. |
|
1987 |
21 |
1-4 |
p. 41-54 14 p. |
artikel |
21 |
GaAs-based ternary compounds and solar cell research
|
Vernon, S.M. |
|
1987 |
21 |
1-4 |
p. 456- 1 p. |
artikel |
22 |
GaInP/GaAs multijunction solar cells
|
Olson, J.M. |
|
1987 |
21 |
1-4 |
p. 450-451 2 p. |
artikel |
23 |
Gas and surface processes leading to hydrogenated amorphous silicon films
|
Gallacher, A. |
|
1987 |
21 |
1-4 |
p. 147-152 6 p. |
artikel |
24 |
High efficiency amorphous alloy solar cells prepared by mercury-sensitized photochemical vapor deposition of disilane
|
Delahoy, Alan E |
|
1987 |
21 |
1-4 |
p. 153-166 14 p. |
artikel |
25 |
Highly efficient silicon solar cells
|
Spitzer, M.B. |
|
1987 |
21 |
1-4 |
p. 457- 1 p. |
artikel |
26 |
High speed characterization of photovoltaic devices
|
Ahrenkiel, R.K. |
|
1987 |
21 |
1-4 |
p. 353-369 17 p. |
artikel |
27 |
II-VI and I-III-VI2 alloy crystals for photovoltaic applications
|
Bachmann, K.J |
|
1987 |
21 |
1-4 |
p. 99-108 10 p. |
artikel |
28 |
Improvements in the disilane plasma deposition of hydrogenated amorphous silicon solar cells
|
Vanier, P.E. |
|
1987 |
21 |
1-4 |
p. 167-175 9 p. |
artikel |
29 |
Improving the performance of amorphous silicon photovoltaic modules
|
Carlson, D.E |
|
1987 |
21 |
1-4 |
p. 15-18 4 p. |
artikel |
30 |
Influence of drift field on n-i-p solar cell performance
|
Ali, Ahmed Y. |
|
1987 |
21 |
1-4 |
p. 263-279 17 p. |
artikel |
31 |
In situ optical characterization of structures grown by metal-organic chemical vapor deposition
|
Olson, J.M. |
|
1987 |
21 |
1-4 |
p. 456-457 2 p. |
artikel |
32 |
Joint EPRI-SERI spectral solar radiation database project
|
Riordan, C. |
|
1987 |
21 |
1-4 |
p. 337-342 6 p. |
artikel |
33 |
Junction formation and the role of oxygen in thin film CdS/CuInSe2 solar cells
|
Matson, R.J. |
|
1987 |
21 |
1-4 |
p. 455- 1 p. |
artikel |
34 |
Laser-induced chemical vapor deposition of hydrogenated amorphous silicon: Photovoltaic devices and material properties
|
Branz, H.M. |
|
1987 |
21 |
1-4 |
p. 177-188 12 p. |
artikel |
35 |
Light spot scanning of solar cells: a test of the assumption of uniformity
|
Phillips, J.E. |
|
1987 |
21 |
1-4 |
p. 459- 1 p. |
artikel |
36 |
Long-term stability of amorphous silicon solar cells and modules
|
Eser, E. |
|
1987 |
21 |
1-4 |
p. 25-39 15 p. |
artikel |
37 |
Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells
|
Kapur, Vijay K. |
|
1987 |
21 |
1-4 |
p. 65-72 8 p. |
artikel |
38 |
Material aspects of multijunction solar cell research
|
Guha, Subhendu |
|
1987 |
21 |
1-4 |
p. 450- 1 p. |
artikel |
39 |
Material considerations for high efficiency silicon solar cells
|
Ciszek, T.F. |
|
1987 |
21 |
1-4 |
p. 81-98 18 p. |
artikel |
40 |
Measurement of photovoltaic device current as a function of voltage, temperature, intensity and spectrum
|
Emery, Keith |
|
1987 |
21 |
1-4 |
p. 313-327 15 p. |
artikel |
41 |
Metastability of hydrogenated amorphous silicon
|
Pankove, Jacques I. |
|
1987 |
21 |
1-4 |
p. 419-429 11 p. |
artikel |
42 |
Multijunction concentrator solar cells
|
Werthen, J.G. |
|
1987 |
21 |
1-4 |
p. 452- 1 p. |
artikel |
43 |
New approaches for high efficiency cascade solar cells
|
Katsuyama, T. |
|
1987 |
21 |
1-4 |
p. 413-418 6 p. |
artikel |
44 |
Ohmic contacts and doping of CdTe
|
Fahrenbruch, Alan L. |
|
1987 |
21 |
1-4 |
p. 399-412 14 p. |
artikel |
45 |
On the effect of stoichiometry and oxygen on the properties of CuInSe2 thin films and devices
|
Noufi, R. |
|
1987 |
21 |
1-4 |
p. 55-63 9 p. |
artikel |
46 |
Optical absorption and disorder in hydrogenated amorphous SiGe and SiC alloy systems
|
Tsu, R |
|
1987 |
21 |
1-4 |
p. 189-194 6 p. |
artikel |
47 |
Outdoor performance and stability testing of thin film devices
|
DeBlasio, R. |
|
1987 |
21 |
1-4 |
p. 343-351 9 p. |
artikel |
48 |
Patterned germanium tunnel junctions for multijunction monolithic cascade solar cells
|
Chiang, P.K |
|
1987 |
21 |
1-4 |
p. 241-252 12 p. |
artikel |
49 |
Photochemical vapor deposition of amorphous silicon and alloys for thin film solar cells
|
Baron, B.N. |
|
1987 |
21 |
1-4 |
p. 453- 1 p. |
artikel |
50 |
Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodes
|
Melloch, M.R. |
|
1987 |
21 |
1-4 |
p. 233-240 8 p. |
artikel |
51 |
Photoluminescence in polycrystalline CuInSe2 solar cells
|
Sites, J.R. |
|
1987 |
21 |
1-4 |
p. 379-386 8 p. |
artikel |
52 |
Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system
|
Bhattacharya, R.N. |
|
1987 |
21 |
1-4 |
p. 371-377 7 p. |
artikel |
53 |
Photovoltaic safety conference
|
Luft, Werner |
|
1987 |
21 |
1-4 |
p. 457-458 2 p. |
artikel |
54 |
Photovoltaics research and development — key to America's energy source
|
Stone, Jack L. |
|
1987 |
21 |
1-4 |
p. 449- 1 p. |
artikel |
55 |
Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe
|
Nouhi, A. |
|
1987 |
21 |
1-4 |
p. 225-232 8 p. |
artikel |
56 |
Preparation of CuInSe2 and CuInS2 films by reactive annealing in H2Se OR H2S
|
Lokhande, Chandrakant D |
|
1987 |
21 |
1-4 |
p. 215-224 10 p. |
artikel |
57 |
Preparation of solar-grade amorphous silicon from fluorinated silanes
|
Pernisz, U.C |
|
1987 |
21 |
1-4 |
p. 195-203 9 p. |
artikel |
58 |
Rapid liquid phase epitaxial growth studies
|
Crisman, E.E. |
|
1987 |
21 |
1-4 |
p. 458- 1 p. |
artikel |
59 |
Reproducible integration of multijunction cascade cell components
|
Lewis, C.R. |
|
1987 |
21 |
1-4 |
p. 253-261 9 p. |
artikel |
60 |
Review of high efficiency multijunction and point contact GaAs solar cell development
|
Hutchby, J.A. |
|
1987 |
21 |
1-4 |
p. 449- 1 p. |
artikel |
61 |
Status and directions in high efficiency silicon solar cell research
|
Rohatgi, A. |
|
1987 |
21 |
1-4 |
p. 450- 1 p. |
artikel |
62 |
Structural characterization of amorphous silicon and germanium
|
Tsu, Raphael |
|
1987 |
21 |
1-4 |
p. 19-24 6 p. |
artikel |
63 |
Study of thermal and light-induced changes in amorphous silicon alloy materials
|
Collis, W.J. |
|
1987 |
21 |
1-4 |
p. 453- 1 p. |
artikel |
64 |
Subject index
|
|
|
1987 |
21 |
1-4 |
p. 463-468 6 p. |
artikel |
65 |
Temperature-dependent photoconductivity and light-induced changes in a-Si1−x Ge x:H alloys
|
Xi, J.P |
|
1987 |
21 |
1-4 |
p. 205-213 9 p. |
artikel |
66 |
Theoretical investigations of the light-induced effects in hydrogenated amorphous silicon
|
Adler, David |
|
1987 |
21 |
1-4 |
p. 439-448 10 p. |
artikel |
67 |
The preparation of thin films for photovoltaic conversion by novel metal-organic chemical vapour deposition techniques
|
Saunders, A. |
|
1987 |
21 |
1-4 |
p. 455- 1 p. |
artikel |
68 |
Thin films cadmium telluride solar cells
|
Chu, T.L. |
|
1987 |
21 |
1-4 |
p. 73-80 8 p. |
artikel |
69 |
Transmission electron microscopy and scanning electron microscopy characterization of GaP grown by metal-organic chemical vapor deposition on silicon substrates
|
Al-Jassim, M.M. |
|
1987 |
21 |
1-4 |
p. 459-460 2 p. |
artikel |
70 |
Vacuum chemical epitaxial growth of III–V materials for multi-band-gap solar cells
|
McLeod, P.S. |
|
1987 |
21 |
1-4 |
p. 109-116 8 p. |
artikel |
71 |
Vacuum growth of thin films of ZnSnP2
|
Ajmera, P.K |
|
1987 |
21 |
1-4 |
p. 291-299 9 p. |
artikel |
72 |
Work in the solid state theory group at the solar energy research institute
|
Zunger, Alex |
|
1987 |
21 |
1-4 |
p. 458-459 2 p. |
artikel |