| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Author index
|
|
|
1980
|
2 |
4 |
p. 461-
1 p.
|
artikel
|
| 2 |
Dopant concentration measurements in hydrogenated amorphous silicon films by glow discharge optical spectroscopy
|
Zesch, J.C.
|
|
1980
|
2 |
4 |
p. 377-383
7 p.
|
artikel
|
| 3 |
Electron spin resonance measurements on amorphous silicon
|
Biegelsen, D.K.
|
|
1980
|
2 |
4 |
p. 421-430
10 p.
|
artikel
|
| 4 |
Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometry
|
Magee, Charles
|
|
1980
|
2 |
4 |
p. 365-376
12 p.
|
artikel
|
| 5 |
Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys
|
Kampas, F.J.
|
|
1980
|
2 |
4 |
p. 385-400
16 p.
|
artikel
|
| 6 |
Photoluminescence assessment of solar cell materials
|
Pankove, J.I.
|
|
1980
|
2 |
4 |
p. 443-449
7 p.
|
artikel
|
| 7 |
Session III
|
Carlson, D.E.
|
|
1980
|
2 |
4 |
p. 349-350
2 p.
|
artikel
|
| 8 |
Session IV
|
Mahan, H.
|
|
1980
|
2 |
4 |
p. 407-408
2 p.
|
artikel
|
| 9 |
Structural studies of hydrogenated amorphous silicon
|
Knights, J.C.
|
|
1980
|
2 |
4 |
p. 409-419
11 p.
|
artikel
|
| 10 |
Studies of hydrogenated amorphous silicon by xerographic discharge techniques
|
Mort, J.
|
|
1980
|
2 |
4 |
p. 451-459
9 p.
|
artikel
|
| 11 |
Subject index
|
|
|
1980
|
2 |
4 |
p. 463-466
4 p.
|
artikel
|
| 12 |
Thickness-dependent conductivity and photoconductivity of hydrogenated amorphous silicon
|
Brodsky, M.H.
|
|
1980
|
2 |
4 |
p. 401-406
6 p.
|
artikel
|
| 13 |
Use of nuclear reaction analysis to characterize the elemental composition and density of thin film amorphous silicon
|
Lanford, W.A.
|
|
1980
|
2 |
4 |
p. 351-363
13 p.
|
artikel
|
| 14 |
Vibrational spectroscopy of hydrogenated amorphous silicon alloys
|
Lucovsky, G.
|
|
1980
|
2 |
4 |
p. 431-442
12 p.
|
artikel
|
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