nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Annealing temperature effects on CuInSe2/CdS solar cells
|
Hollingsworth, R.E. |
|
1986 |
16 |
C |
p. 457-477 21 p. |
artikel |
2 |
Author index
|
|
|
1986 |
16 |
C |
p. 635- 1 p. |
artikel |
3 |
Chemical spray pyrolysis of CuInSe2 thin films
|
Bougnot, J. |
|
1986 |
16 |
C |
p. 221-236 16 p. |
artikel |
4 |
Comment on “critical materials assessment program” (S. A. Smith and R. Watts, Battelle Memorial Institute)
|
Zweibel, K. |
|
1986 |
16 |
C |
p. 631-634 4 p. |
artikel |
5 |
CuInSe2/Cd(Zn)S solar cell modeling and analysis
|
Rothwarf, Allen |
|
1986 |
16 |
C |
p. 567-590 24 p. |
artikel |
6 |
Degeneracy effect on the optical properties of CuInSe2
|
Rincón, C. |
|
1986 |
16 |
C |
p. 363-368 6 p. |
artikel |
7 |
EBIC investigations of junction activity and the role of oxygen in CdS/CuInSe2 devices
|
Matson, R.J. |
|
1986 |
16 |
C |
p. 495-519 25 p. |
artikel |
8 |
Editorial
|
|
|
1986 |
16 |
C |
p. v- 1 p. |
artikel |
9 |
Editorial Board
|
|
|
1986 |
16 |
C |
p. iii- 1 p. |
artikel |
10 |
Electrochemical formation of CuInSe2 heterostructures for efficient and stable solar conversion
|
Menezes, Shalini |
|
1986 |
16 |
C |
p. 255-282 28 p. |
artikel |
11 |
Electrodeposition of CuInSe2 and CuInS2 films
|
Hodes, Gary |
|
1986 |
16 |
C |
p. 245-254 10 p. |
artikel |
12 |
Electrodeposition of CuInX ( X = Se, Te ) thin films
|
Bhattacharya, R.N. |
|
1986 |
16 |
C |
p. 237-243 7 p. |
artikel |
13 |
Enhanced photocurrent ZnO/CdS/CuInSe2 solar cells
|
Potter, R.R. |
|
1986 |
16 |
C |
p. 521-527 7 p. |
artikel |
14 |
Epitaxial layers of CuInSe2
|
Schumann, B. |
|
1986 |
16 |
C |
p. 43-63 21 p. |
artikel |
15 |
Evidence of deep levels in crystalline CuInSe2
|
Qiu, C.X. |
|
1986 |
16 |
C |
p. 391-397 7 p. |
artikel |
16 |
Fabrication of CuInSe2 single crystals using melt-growth techniques
|
Tomlinson, R.D. |
|
1986 |
16 |
C |
p. 17-26 10 p. |
artikel |
17 |
First investigation of the atomic structure of (112) and ( 112 ) CuInSe2 surfaces
|
Kahn, A. |
|
1986 |
16 |
C |
p. 123-130 8 p. |
artikel |
18 |
Growth and characterization of polycrystalline CuInSe2 thin films
|
Samaan, A.N.Y. |
|
1986 |
16 |
C |
p. 181-198 18 p. |
artikel |
19 |
Growth by directional freezing of CuInSe2 and diffused homojunctions in bulk material
|
Shih, I. |
|
1986 |
16 |
C |
p. 27-41 15 p. |
artikel |
20 |
Growth of large-grain CuInSe2 thin films by flash-evaporation and sputtering
|
Romeo, N. |
|
1986 |
16 |
C |
p. 155-164 10 p. |
artikel |
21 |
High efficiency CuInSe2 based heterojunction solar cells: Fabrication and results
|
Birkmire, R.W. |
|
1986 |
16 |
C |
p. 419-427 9 p. |
artikel |
22 |
Laser-induced synthesis of thin CuInSe2 films
|
Laude, L.D. |
|
1986 |
16 |
C |
p. 199-209 11 p. |
artikel |
23 |
Lattice vibrational, thermal and mechanical properties of CuInSe2
|
Neumann, H. |
|
1986 |
16 |
C |
p. 399-418 20 p. |
artikel |
24 |
Liquid phase epitaxial growth and electrical characterization of CuInSe2
|
Takenoshita, H. |
|
1986 |
16 |
C |
p. 65-89 25 p. |
artikel |
25 |
Magnetron reactive sputtering of copper-indium-selenide
|
Thornton, John A. |
|
1986 |
16 |
C |
p. 165-180 16 p. |
artikel |
26 |
n-CuInSe2 photoelectrochemical cells
|
Cahen, David |
|
1986 |
16 |
C |
p. 529-548 20 p. |
artikel |
27 |
Optical properties and characterization of CuInSe2
|
Rincón, C. |
|
1986 |
16 |
C |
p. 335-349 15 p. |
artikel |
28 |
Optical properties and electronic band structure of CuInSe2
|
Neumann, H. |
|
1986 |
16 |
C |
p. 317-333 17 p. |
artikel |
29 |
Phase relationships, crystal growth and stoichiometry defects in AICIIID2 VI/BIIDVI heterojunction-forming systems
|
Manca, P |
|
1986 |
16 |
C |
p. 101-121 21 p. |
artikel |
30 |
Photoelectrical properties of CuInSe2 thin films
|
Trykozko, R. |
|
1986 |
16 |
C |
p. 351-356 6 p. |
artikel |
31 |
Polycrystalline semiconductor heterojunction modeling (CdS/CuInSe2)
|
Böer, K.W. |
|
1986 |
16 |
C |
p. 591-609 19 p. |
artikel |
32 |
Preparation and characterization of vacuum deposited CuInSe2 thin films
|
Dhere, Neelkanth G. |
|
1986 |
16 |
C |
p. 369-380 12 p. |
artikel |
33 |
Preparation and some properties of CuInSe2 single crystals
|
Endo, Saburo |
|
1986 |
16 |
C |
p. 1-15 15 p. |
artikel |
34 |
Preparation and some semiconducting properties of CuInSe2 thin films
|
Isomura, S. |
|
1986 |
16 |
C |
p. 143-153 11 p. |
artikel |
35 |
Preparation of CuInSe2 films by an electrophoretic deposition technique
|
Shih, I. |
|
1986 |
16 |
C |
p. 283-287 5 p. |
artikel |
36 |
Spray pyrolysis of CuInSe2
|
Mooney, John B. |
|
1986 |
16 |
C |
p. 211-220 10 p. |
artikel |
37 |
Subject index
|
|
|
1986 |
16 |
C |
p. 637-640 4 p. |
artikel |
38 |
Temperature dependence of the bandgap in CuInSe2
|
Rincón, C. |
|
1986 |
16 |
C |
p. 357-362 6 p. |
artikel |
39 |
The chemistry of structural defects in CuInSe2
|
Von Bardeleben, H.J. |
|
1986 |
16 |
C |
p. 381-390 10 p. |
artikel |
40 |
The effect of deep states on the photovoltaic performance of CdZnS/CuInSe2 thin film devices
|
Ahrenkiel, R.K. |
|
1986 |
16 |
C |
p. 549-565 17 p. |
artikel |
41 |
Theory of high efficiency (Cd,Zn)S/CuInSe2 thin film solar cells
|
Goradia, Chandra |
|
1986 |
16 |
C |
p. 611-630 20 p. |
artikel |
42 |
The phase relations in the Cu,In,Se system and the growth of CuInSe2 single crystals
|
Fearheiley, M.L. |
|
1986 |
16 |
C |
p. 91-100 10 p. |
artikel |
43 |
The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devices
|
Noufi, R. |
|
1986 |
16 |
C |
p. 479-493 15 p. |
artikel |
44 |
The structure of CuInSe2 films formed by co-evaporation of the elements
|
Don, E.R. |
|
1986 |
16 |
C |
p. 131-142 12 p. |
artikel |
45 |
Thin film tandem solar cells based on CuInSe2
|
Meakin, J.D. |
|
1986 |
16 |
C |
p. 447-455 9 p. |
artikel |
46 |
Transport properties of CuInSe2
|
Wasim, S.M. |
|
1986 |
16 |
C |
p. 289-316 28 p. |
artikel |
47 |
X-ray absorption spectroscopic study of photovoltaic solar cell materials of the type AIBIIIC2 VI with special reference to CuInSe2
|
Deshpande, Achyut |
|
1986 |
16 |
C |
p. 429-445 17 p. |
artikel |