| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Barrier heights and passivation of grain boundaries in polycrystalline silicon
|
Seager, C.H.
|
|
1980
|
1 |
3 |
p. 293-296
4 p.
|
artikel
|
| 2 |
Capacitance as a tool for investigating thin film CdS/Cu2S heterojunctions
|
Manthey, W.J.
|
|
1980
|
1 |
3 |
p. 321-322
2 p.
|
artikel
|
| 3 |
Diffusion length measurements in Cu2S
|
Biter, W.J.
|
|
1980
|
1 |
3 |
p. 271-272
2 p.
|
artikel
|
| 4 |
Effect of interface recombination at p-n junction perimeters on photoluminescence and current
|
Henry, C.H.
|
|
1980
|
1 |
3 |
p. 304-
1 p.
|
artikel
|
| 5 |
Electrical transport properties in inhomogeneous media
|
Landauer, R.
|
|
1980
|
1 |
3 |
p. 297-
1 p.
|
artikel
|
| 6 |
Ellipsometry of thin silicon dioxide films on rough polycrystalline silicon surfaces
|
David Burleigh, T.
|
|
1980
|
1 |
3 |
p. 272-
1 p.
|
artikel
|
| 7 |
Evaluation of silicon-on-ceramic using light-beam-induced currents
|
David Zook, J.
|
|
1980
|
1 |
3 |
p. 273-274
2 p.
|
artikel
|
| 8 |
Experimental determination of the photon economy in polycrystalline thin film photovoltaic materials and devices
|
Bragagnolo, J.A.
|
|
1980
|
1 |
3 |
p. 275-283
9 p.
|
artikel
|
| 9 |
Grain boundary defects in thin semicrystalline material
|
Putney, Zimri C.
|
|
1980
|
1 |
3 |
p. 285-292
8 p.
|
artikel
|
| 10 |
Grain boundary effects and conduction mechanism studies in chromium metal-insulator-silicon solar cells on polycrystalline silicon
|
Anderson, W.A.
|
|
1980
|
1 |
3 |
p. 305-310
6 p.
|
artikel
|
| 11 |
Grain boundary resistance measurements in polycrystalline GaAs
|
Cohen, M.J.
|
|
1980
|
1 |
3 |
p. 298-301
4 p.
|
artikel
|
| 12 |
Infrared electroluminescence as a diagnostic tool for polycrystalline GaAs solar cells
|
Turner, G.W.
|
|
1980
|
1 |
3 |
p. 261-262
2 p.
|
artikel
|
| 13 |
Measurement of the resistivity of thin CdS films on brass substrates
|
Hogan, S.
|
|
1980
|
1 |
3 |
p. 323-326
4 p.
|
artikel
|
| 14 |
Measurement techniques in thin film polycrystalline materials and devices (solar cells)
|
Charles Jr., Harry K.
|
|
1980
|
1 |
3 |
p. 327-346
20 p.
|
artikel
|
| 15 |
Noise spectral density as a device reliability estimator
|
Dubow, Joel
|
|
1980
|
1 |
3 |
p. 315-319
5 p.
|
artikel
|
| 16 |
Physical models for recombination currents in polycrystalline silicon p-n junction solar cells
|
Fossum, J.G.
|
|
1980
|
1 |
3 |
p. 302-304
3 p.
|
artikel
|
| 17 |
Scanned laser response studies of metal-insulator-silicon solar cells in polycrystalline czochralski silicon
|
Szedon, J.R.
|
|
1980
|
1 |
3 |
p. 251-259
9 p.
|
artikel
|
| 18 |
Some investigations on the influence of defects/grain boundaries on photovoltaic mechanisms in polycrystalline silicon films
|
Sopori, B.L.
|
|
1980
|
1 |
3 |
p. 237-250
14 p.
|
artikel
|
| 19 |
Study of grain boundaries in GaAs by scanning light microscopy
|
Fletcher, R.M.
|
|
1980
|
1 |
3 |
p. 263-270
8 p.
|
artikel
|
| 20 |
Study of spatial inhomogeneities in photosensitive materials using direct current and microwave techniques
|
Herczfeld, P.
|
|
1980
|
1 |
3 |
p. 311-314
4 p.
|
artikel
|
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