| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Backscattering and transmission electron microscopy studies of layered structures
|
Mayer, J.W.
|
|
1980
|
1 |
2 |
p. 141-144
4 p.
|
artikel
|
| 2 |
Characterization of EFG silicon ribbons by ion beam techniques
|
Hage-Ali, M.
|
|
1980
|
1 |
2 |
p. 153-157
5 p.
|
artikel
|
| 3 |
Correlation of grain boundary electrical properties with grain boundary impurities in multigrained silicon using surface analytical techniques
|
Kazmerski, L.L.
|
|
1980
|
1 |
2 |
p. 178-182
5 p.
|
artikel
|
| 4 |
Effective diffusion length in polycrystalline semiconductor thin films
|
Chu, T.L.
|
|
1980
|
1 |
2 |
p. 222-224
3 p.
|
artikel
|
| 5 |
Effect of substrate orientation on the properties of the Si/PbS heterojunction
|
Elabd, H.
|
|
1980
|
1 |
2 |
p. 199-208
10 p.
|
artikel
|
| 6 |
Electron-beam-induced current and scanning light spot techniques for investigating the response of polycrystalline solar cells
|
Inoue, N.
|
|
1980
|
1 |
2 |
p. 233-236
4 p.
|
artikel
|
| 7 |
Electron-beam-induced current characterization of polycrystalline silicon solar cells
|
Hanoka, J.I.
|
|
1980
|
1 |
2 |
p. 123-139
17 p.
|
artikel
|
| 8 |
Electron diffusion lengths in the CdS Cu x S cell from spectral response measurements
|
Moses, C
|
|
1980
|
1 |
2 |
p. 218-221
4 p.
|
artikel
|
| 9 |
Electronic transport and optical properties of dislocations in deformed compound semiconductors
|
Elbaum, C.
|
|
1980
|
1 |
2 |
p. 216-217
2 p.
|
artikel
|
| 10 |
Etching of CdS films
|
Shirland, F.A.
|
|
1980
|
1 |
2 |
p. 183-197
15 p.
|
artikel
|
| 11 |
Grain size and its influence on efficiency in polycrystalline GaAs solar cells
|
Blakeslee, A.E.
|
|
1980
|
1 |
2 |
p. 149-152
4 p.
|
artikel
|
| 12 |
Measuring trace elements in semiconductors: Methods and pitfalls
|
Lindstrom, Richard M.
|
|
1980
|
1 |
2 |
p. 117-122
6 p.
|
artikel
|
| 13 |
New techniques for the study and control of grain boundary effects
|
Wood, R.F.
|
|
1980
|
1 |
2 |
p. 145-148
4 p.
|
artikel
|
| 14 |
Optical properties of polycrystalline semiconductor films
|
Clark, A.H.
|
|
1980
|
1 |
2 |
p. 213-215
3 p.
|
artikel
|
| 15 |
Perspective on photovoltaic material and device measurements
|
Rothwarf, Allen
|
|
1980
|
1 |
2 |
p. 115-116
2 p.
|
artikel
|
| 16 |
Photoconductivity as a probe of polycrystalline films
|
Bube, R.H.
|
|
1980
|
1 |
2 |
p. 209-212
4 p.
|
artikel
|
| 17 |
Preface
|
|
|
1980
|
1 |
2 |
p. 113-
1 p.
|
artikel
|
| 18 |
Scanning light spot analysis of faulty solar cells
|
Lehovec, K.
|
|
1980
|
1 |
2 |
p. 175-177
3 p.
|
artikel
|
| 19 |
Structural and chemical characterization of photovoltaic materials and devices
|
Meakin, John D.
|
|
1980
|
1 |
2 |
p. 158-
1 p.
|
artikel
|
| 20 |
The design and utilization of a microprocessor-controlled absolute spectral response system
|
Kilgren, L.M.
|
|
1980
|
1 |
2 |
p. 225-231
7 p.
|
artikel
|
| 21 |
The Zn x Cd1−x S/Cu2S heterojunction: Review and recent measurements
|
Burton, L.C
|
|
1980
|
1 |
2 |
p. 159-174
16 p.
|
artikel
|
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