nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advances in CdTe n-i-p photovoltaics
|
Meyers, Peter V. |
|
1989 |
|
1-4 |
p. 91-98 8 p. |
artikel |
2 |
Advances in CuInSe2 and CdTe thin film solar cells
|
Shafarman, W.N. |
|
1991 |
|
1-4 |
p. 61-67 7 p. |
artikel |
3 |
Advances in double-junction amorphous silicon photovoltaic modules
|
Ichikawa, Yukimi |
|
1991 |
|
1-4 |
p. 285-291 7 p. |
artikel |
4 |
Advances in the development of an AlGaAs/GaAs cascade solar cell using a patterned germanium tunnel interconnect
|
Venkatasubramanian, R. |
|
1991 |
|
1-4 |
p. 345-354 10 p. |
artikel |
5 |
Amorphous alloy tandem junction solar cells
|
Dalal, Vikram |
|
1987 |
|
1-4 |
p. 451- 1 p. |
artikel |
6 |
An approach to the optimal design of p-n heterojunction solar cells using thin film organic semiconductors
|
Panayotatos, P. |
|
1987 |
|
1-4 |
p. 301-311 11 p. |
artikel |
7 |
An investigation into the use of inorganic coatings for thin film photovoltaic modules
|
Longrigg, P. |
|
1989 |
|
1-4 |
p. 267-278 12 p. |
artikel |
8 |
Annealing effects on individual loss mechanisms in CuInSe2 solar cells
|
Sasala, R.A. |
|
1991 |
|
1-4 |
p. 101-107 7 p. |
artikel |
9 |
A novel reactor for large-area epitaxial solar cell materials
|
Chinoy, Percy B. |
|
1991 |
|
1-4 |
p. 323-335 13 p. |
artikel |
10 |
Application of metal-organic chemical vapor deposition techniques to CdTe/In2O3:Sn thin film solar cells
|
Schafer, D.E. |
|
1987 |
|
1-4 |
p. 454- 1 p. |
artikel |
11 |
Aspects of processing InP-related solar cells
|
Gessert, T.A. |
|
1989 |
|
1-4 |
p. 307-320 14 p. |
artikel |
12 |
Atmospheric optical calibration system for outdoor photovoltaic measurements
|
Hulstrom, R. |
|
1987 |
|
1-4 |
p. 329-335 7 p. |
artikel |
13 |
Auger line shape analysis of hydrogenated amorphous silicon
|
Burnham, N.A. |
|
1987 |
|
1-4 |
p. 135-140 6 p. |
artikel |
14 |
Author index
|
|
|
1989 |
|
1-4 |
p. 501-502 2 p. |
artikel |
15 |
Author index
|
|
|
1987 |
|
1-4 |
p. 461-462 2 p. |
artikel |
16 |
Author index of volume 30
|
|
|
1991 |
|
1-4 |
p. 573-574 2 p. |
artikel |
17 |
Bonding defects in amorphous silicon alloys
|
Cook Jr., J.W. |
|
1987 |
|
1-4 |
p. 387-397 11 p. |
artikel |
18 |
Broad band spectroscopic ellipsometry for the characterization of photovoltaic materials
|
Abou-Elfotouh, F.A. |
|
1991 |
|
1-4 |
p. 473-485 13 p. |
artikel |
19 |
Cadmium telluride module development
|
Albright, Scot P. |
|
1991 |
|
1-4 |
p. 137-142 6 p. |
artikel |
20 |
CdTe/CuInSe2 multijunction solar cells
|
Meakin, J.D. |
|
1987 |
|
1-4 |
p. 451- 1 p. |
artikel |
21 |
CdZnTe for a wide band gap all thin film solar cell
|
Hay, Kenneth A. |
|
1987 |
|
1-4 |
p. 454- 1 p. |
artikel |
22 |
Chairman's comment
|
|
|
1991 |
|
1-4 |
p. 1- 1 p. |
artikel |
23 |
Chairman's comments
|
Benner, JohnP. |
|
1991 |
|
1-4 |
p. IFC- 1 p. |
artikel |
24 |
Chairman's comments
|
Coutts, T.J. |
|
1989 |
|
1-4 |
p. 1-2 2 p. |
artikel |
25 |
Characterization of the defect levels in copper indium diselenide
|
Abou-Elfotouh, F.A. |
|
1991 |
|
1-4 |
p. 151-160 10 p. |
artikel |
26 |
Characterization of thin film CuInSe2 and CuGaSe2: The existence and identification of secondary phases
|
Tuttle, J.R. |
|
1989 |
|
1-4 |
p. 231-236 6 p. |
artikel |
27 |
Continuous-mode fabrication of amorphous silicon solar cells on polyimide substrates
|
Vernstrom, G.D |
|
1987 |
|
1-4 |
p. 141-146 6 p. |
artikel |
28 |
Correction for multiple reflections in infrared spectra of amorphous silicon
|
Langford, A.A. |
|
1989 |
|
1-4 |
p. 373-383 11 p. |
artikel |
29 |
Correlation between fill factors of amorphous silicon solar cells, and their i layer densities of states as determined by DLTS
|
Kalina, J. |
|
1989 |
|
1-4 |
p. 341-346 6 p. |
artikel |
30 |
Correlation of material properties and recombination losses in Al0.2Ga0.8As solar cells
|
Lush, G.B. |
|
1989 |
|
1-4 |
p. 363-372 10 p. |
artikel |
31 |
Cost and performance sensitivity studies for solar photovoltaic/electrolytic hydrogen systems
|
Ogden, Joan M. |
|
1991 |
|
1-4 |
p. 515-523 9 p. |
artikel |
32 |
Criteria for the design of high efficiency thin film solar cells: Theory and practice
|
Rothwarf, Allen |
|
1987 |
|
1-4 |
p. 1-14 14 p. |
artikel |
33 |
Crystallized amorphous silicon for low-cost solar cells
|
Yi, J. |
|
1991 |
|
1-4 |
p. 403-413 11 p. |
artikel |
34 |
Cu/In deposited at room temperature: morphology, phases and reactions
|
Chen, J.S. |
|
1991 |
|
1-4 |
p. 451-458 8 p. |
artikel |
35 |
CuInSe2 module environmental reliability
|
Tarrant, Dale E. |
|
1991 |
|
1-4 |
p. 549-557 9 p. |
artikel |
36 |
CuInSe2 photovoltaic modules
|
Mitchell, K.W. |
|
1991 |
|
1-4 |
p. 131-136 6 p. |
artikel |
37 |
Deep level study of CdS/CuInSe2 solar cells
|
Ramanathan, V. |
|
1987 |
|
1-4 |
p. 454-455 2 p. |
artikel |
38 |
Deep-level transient spectroscopy of AlGaAs and CuInSe2
|
Hanak, Thomas R. |
|
1989 |
|
1-4 |
p. 347-356 10 p. |
artikel |
39 |
Defect equilibration and metastability in low-spin-density amorphous hydrogenated silicon
|
McMahon, T.J. |
|
1991 |
|
1-4 |
p. 235-243 9 p. |
artikel |
40 |
Defect equilibrium thermodynamics in hydrogenated amorphous silicon: Consequences for solar cells
|
Branz, Howard M. |
|
1989 |
|
1-4 |
p. 159-168 10 p. |
artikel |
41 |
Defects in hydrogenated amorphous silicon and related alloys
|
Taylor, P.C. |
|
1987 |
|
1-4 |
p. 452- 1 p. |
artikel |
42 |
Defect suppression and enhancement of minority carrier lifetimes in bulk GaAs
|
Wong, D. |
|
1989 |
|
1-4 |
p. 419-427 9 p. |
artikel |
43 |
Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition
|
Lucovsky, G. |
|
1991 |
|
1-4 |
p. 419-434 16 p. |
artikel |
44 |
Developments on CdS/CdTe photovoltaic panels at Photon Energy, Inc.
|
Albright, S.P. |
|
1989 |
|
1-4 |
p. 77-90 14 p. |
artikel |
45 |
Device aspects of multijunction photovoltaic module research
|
Mitchell, K.W. |
|
1987 |
|
1-4 |
p. 127-134 8 p. |
artikel |
46 |
Device-quality CuInSe2 produced by the hybrid process
|
Talieh, H. |
|
1989 |
|
1-4 |
p. 321-329 9 p. |
artikel |
47 |
Diode quality factor determination for thin-film solar cells
|
Sites, J.R. |
|
1989 |
|
1-4 |
p. 411-417 7 p. |
artikel |
48 |
Distribution of the density of states of bonded hydrogen in amorphous hydrogenated silicon
|
Street, R.A. |
|
1991 |
|
1-4 |
p. 207-218 12 p. |
artikel |
49 |
Early experiences of the 15 kW NMPC demand-side management photovoltaic project
|
Bailey, Bruce |
|
1991 |
|
1-4 |
p. 529-533 5 p. |
artikel |
50 |
Editorial Board
|
|
|
1989 |
|
1-4 |
p. iii- 1 p. |
artikel |
51 |
Editorial Board
|
|
|
1987 |
|
1-4 |
p. iii- 1 p. |
artikel |
52 |
Effects of dopant and impurity incorporation on metastable light-induced defect formation
|
Jackson, W.B. |
|
1987 |
|
1-4 |
p. 431-438 8 p. |
artikel |
53 |
Electrical and optical properties of amorphous silicon films deposited from fluorodisilanes
|
D'Errico, John J. |
|
1989 |
|
1-4 |
p. 391-401 11 p. |
artikel |
54 |
Electroluminescence studies of recombination in hydrogenated amorphous silicon p-i-n devices
|
Wang, K. |
|
1991 |
|
1-4 |
p. 219-225 7 p. |
artikel |
55 |
Electron cyclotron resonance deposition and plasma diagnostics of a-Si:H and a-C:H films
|
Shing, Y.H. |
|
1989 |
|
1-4 |
p. 331-340 10 p. |
artikel |
56 |
Electron cyclotron resonance microwave plasma deposition of a-Si:H and a-SiC:H films
|
Shing, Y.H. |
|
1991 |
|
1-4 |
p. 391-401 11 p. |
artikel |
57 |
Electronic structure and stability of semiconductor alloys
|
Zunger, Alex |
|
1987 |
|
1-4 |
p. 460- 1 p. |
artikel |
58 |
Electron trapping and paramagnetic defect density measurements in hydrogenated amorphous silicon
|
Hotaling, S.P. |
|
1989 |
|
1-4 |
p. 357-362 6 p. |
artikel |
59 |
Electro-optical properties of thin indium tin oxide films: Limitations on performance
|
Dhere, R.G. |
|
1987 |
|
1-4 |
p. 281-290 10 p. |
artikel |
60 |
Enhanced grain growth in polycrystalline CuInSe2 using rapid thermal processing
|
Albin, D.S. |
|
1991 |
|
1-4 |
p. 47-52 6 p. |
artikel |
61 |
Environmental, health and safety issues associated with the manufacture and use of II–VI photovoltaic devices
|
Moskowitz, P.D. |
|
1991 |
|
1-4 |
p. 89-99 11 p. |
artikel |
62 |
Evaluation of solar cell material parameters using a non-destructive microwave technique
|
Bothra, S. |
|
1989 |
|
1-4 |
p. 437-444 8 p. |
artikel |
63 |
Evidence for microstructure in glow discharge hydrogenated amorphous Si-C alloys
|
Mahan, A.H. |
|
1987 |
|
1-4 |
p. 117-126 10 p. |
artikel |
64 |
Excitation spectroscopy of photoluminescence in a-Si:H
|
Ristein, J. |
|
1989 |
|
1-4 |
p. 403-409 7 p. |
artikel |
65 |
Fabrication of CdTe solar cells by laser-driven physical vapor deposition
|
Compaan, A. |
|
1991 |
|
1-4 |
p. 79-88 10 p. |
artikel |
66 |
Field test results for the 6 MW Carrizo solar photovoltaic power plant
|
Rosenthal, Andrew L. |
|
1991 |
|
1-4 |
p. 563-571 9 p. |
artikel |
67 |
Fundamental processes in sputtering of relevance to the fabrication of thin film solar cells
|
Thornton, John A. |
|
1987 |
|
1-4 |
p. 41-54 14 p. |
artikel |
68 |
GaAs-based ternary compounds and solar cell research
|
Vernon, S.M. |
|
1987 |
|
1-4 |
p. 456- 1 p. |
artikel |
69 |
GaInP/GaAs multijunction solar cells
|
Olson, J.M. |
|
1987 |
|
1-4 |
p. 450-451 2 p. |
artikel |
70 |
Gas and surface processes leading to hydrogenated amorphous silicon films
|
Gallacher, A. |
|
1987 |
|
1-4 |
p. 147-152 6 p. |
artikel |
71 |
Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells
|
Rohatgi, A. |
|
1991 |
|
1-4 |
p. 109-122 14 p. |
artikel |
72 |
Heat flow measurements for solar cell analysis
|
Wolf, M. |
|
1989 |
|
1-4 |
p. 247-258 12 p. |
artikel |
73 |
High-deposition-rate amorphous silicon solar cells: silane or disilane?
|
Shen, D.S. |
|
1991 |
|
1-4 |
p. 271-275 5 p. |
artikel |
74 |
High efficiency amorphous alloy solar cells prepared by mercury-sensitized photochemical vapor deposition of disilane
|
Delahoy, Alan E |
|
1987 |
|
1-4 |
p. 153-166 14 p. |
artikel |
75 |
High-efficiency CuInSe2 solar cells prepared by the two-stage process
|
Basol, Bulent M. |
|
1989 |
|
1-4 |
p. 299-306 8 p. |
artikel |
76 |
Highlights of the Fourth International Photovoltaic Science and Engineering Conference (PVSEC-4)
|
Green, Martin A. |
|
1989 |
|
1-4 |
p. 3-10 8 p. |
artikel |
77 |
Highly efficient silicon solar cells
|
Spitzer, M.B. |
|
1987 |
|
1-4 |
p. 457- 1 p. |
artikel |
78 |
High-performance concentrator tandem solar cells based on IR-sensitive bottom cells
|
Wanlass, M.W. |
|
1991 |
|
1-4 |
p. 363-371 9 p. |
artikel |
79 |
High speed characterization of photovoltaic devices
|
Ahrenkiel, R.K. |
|
1987 |
|
1-4 |
p. 353-369 17 p. |
artikel |
80 |
Hydrogen content and the goal of stable efficient amorphous-silicon-based solar cells
|
Fortmann, C.M. |
|
1991 |
|
1-4 |
p. 255-260 6 p. |
artikel |
81 |
III–V solar cell research at spire corporation
|
Vernon, S.M. |
|
1989 |
|
1-4 |
p. 107-120 14 p. |
artikel |
82 |
II-VI and I-III-VI2 alloy crystals for photovoltaic applications
|
Bachmann, K.J |
|
1987 |
|
1-4 |
p. 99-108 10 p. |
artikel |
83 |
Improvements in the disilane plasma deposition of hydrogenated amorphous silicon solar cells
|
Vanier, P.E. |
|
1987 |
|
1-4 |
p. 167-175 9 p. |
artikel |
84 |
Improving the performance of amorphous silicon photovoltaic modules
|
Carlson, D.E |
|
1987 |
|
1-4 |
p. 15-18 4 p. |
artikel |
85 |
Influence of drift field on n-i-p solar cell performance
|
Ali, Ahmed Y. |
|
1987 |
|
1-4 |
p. 263-279 17 p. |
artikel |
86 |
In situ optical characterization of structures grown by metal-organic chemical vapor deposition
|
Olson, J.M. |
|
1987 |
|
1-4 |
p. 456-457 2 p. |
artikel |
87 |
Intrinsic defect states in CuInSe2 single crystals
|
Abou-Elfotouh, F. |
|
1989 |
|
1-4 |
p. 237-246 10 p. |
artikel |
88 |
Investigation of polycrystalline CdZnTe, CdMnTe, and CdTe films for photovoltaic applications
|
Rohatgi, A. |
|
1989 |
|
1-4 |
p. 219-230 12 p. |
artikel |
89 |
Ion-assisted doping of CdTe
|
Fahrenbruch, A.L. |
|
1989 |
|
1-4 |
p. 137-147 11 p. |
artikel |
90 |
Issues in metal/semiconductor contact design and implementation
|
Nicolet, M.-A. |
|
1989 |
|
1-4 |
p. 177-189 13 p. |
artikel |
91 |
Joint EPRI-SERI spectral solar radiation database project
|
Riordan, C. |
|
1987 |
|
1-4 |
p. 337-342 6 p. |
artikel |
92 |
Junction formation and the role of oxygen in thin film CdS/CuInSe2 solar cells
|
Matson, R.J. |
|
1987 |
|
1-4 |
p. 455- 1 p. |
artikel |
93 |
Laser-induced chemical vapor deposition of hydrogenated amorphous silicon: Photovoltaic devices and material properties
|
Branz, H.M. |
|
1987 |
|
1-4 |
p. 177-188 12 p. |
artikel |
94 |
Light spot scanning of solar cells: a test of the assumption of uniformity
|
Phillips, J.E. |
|
1987 |
|
1-4 |
p. 459- 1 p. |
artikel |
95 |
Long-term stability of amorphous silicon solar cells and modules
|
Eser, E. |
|
1987 |
|
1-4 |
p. 25-39 15 p. |
artikel |
96 |
Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells
|
Kapur, Vijay K. |
|
1987 |
|
1-4 |
p. 65-72 8 p. |
artikel |
97 |
Low-temperature deposition of hydrogenated amorphous silicon (a-Si:H): Control of polyhydride incorporation and its effects on thin film properties
|
Lucovsky, G. |
|
1989 |
|
1-4 |
p. 121-136 16 p. |
artikel |
98 |
Low temperature homoepitaxial growth of GaAs by dissociating trimethylgallium and trimethylarsenic in a remote hydrogen plasma
|
Pihlstrom, B.G. |
|
1991 |
|
1-4 |
p. 415-418 4 p. |
artikel |
99 |
Material aspects of multijunction solar cell research
|
Guha, Subhendu |
|
1987 |
|
1-4 |
p. 450- 1 p. |
artikel |
100 |
Material considerations for high efficiency silicon solar cells
|
Ciszek, T.F. |
|
1987 |
|
1-4 |
p. 81-98 18 p. |
artikel |
101 |
Materials aspects of multijunction solar cells
|
Hussien, S.A. |
|
1991 |
|
1-4 |
p. 305-311 7 p. |
artikel |
102 |
Measurement and characterization of voltage- and current-induced degradation of thin-film photovoltaic modules
|
Ross Jr., R.G. |
|
1989 |
|
1-4 |
p. 289-298 10 p. |
artikel |
103 |
Measurement of photovoltaic device current as a function of voltage, temperature, intensity and spectrum
|
Emery, Keith |
|
1987 |
|
1-4 |
p. 313-327 15 p. |
artikel |
104 |
Metastability of hydrogenated amorphous silicon
|
Pankove, Jacques I. |
|
1987 |
|
1-4 |
p. 419-429 11 p. |
artikel |
105 |
Multijunction concentrator solar cells
|
Werthen, J.G. |
|
1987 |
|
1-4 |
p. 452- 1 p. |
artikel |
106 |
Needs of the amorphous silicon program with respect to stabilized module performance
|
Luft, W. |
|
1991 |
|
1-4 |
p. 195-205 11 p. |
artikel |
107 |
New approaches for high efficiency cascade solar cells
|
Katsuyama, T. |
|
1987 |
|
1-4 |
p. 413-418 6 p. |
artikel |
108 |
Non-linear recombination processes in photovoltaic semiconductors
|
Ahrenkiel, R.K. |
|
1991 |
|
1-4 |
p. 163-176 14 p. |
artikel |
109 |
Ohmic contacts and doping of CdTe
|
Fahrenbruch, Alan L. |
|
1987 |
|
1-4 |
p. 399-412 14 p. |
artikel |
110 |
On reflection losses from cylindrical concave PV modules
|
Broman, Lars |
|
1989 |
|
1-4 |
p. 489-500 12 p. |
artikel |
111 |
On the effect of stoichiometry and oxygen on the properties of CuInSe2 thin films and devices
|
Noufi, R. |
|
1987 |
|
1-4 |
p. 55-63 9 p. |
artikel |
112 |
Optical absorption and disorder in hydrogenated amorphous SiGe and SiC alloy systems
|
Tsu, R |
|
1987 |
|
1-4 |
p. 189-194 6 p. |
artikel |
113 |
Outdoor performance and stability testing of thin film devices
|
DeBlasio, R. |
|
1987 |
|
1-4 |
p. 343-351 9 p. |
artikel |
114 |
Overview of amorphous silicon photovoltaic module development
|
Carlson, D.E. |
|
1991 |
|
1-4 |
p. 277-283 7 p. |
artikel |
115 |
Patterned germanium tunnel junctions for multijunction monolithic cascade solar cells
|
Chiang, P.K |
|
1987 |
|
1-4 |
p. 241-252 12 p. |
artikel |
116 |
Photocarrier drift measurements and solar cell models for amorphous silicon
|
Schiff, E.A. |
|
1991 |
|
1-4 |
p. 227-233 7 p. |
artikel |
117 |
Photochemical vapor deposition of amorphous silicon and alloys for thin film solar cells
|
Baron, B.N. |
|
1987 |
|
1-4 |
p. 453- 1 p. |
artikel |
118 |
Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodes
|
Melloch, M.R. |
|
1987 |
|
1-4 |
p. 233-240 8 p. |
artikel |
119 |
Photoluminescence in polycrystalline CuInSe2 solar cells
|
Sites, J.R. |
|
1987 |
|
1-4 |
p. 379-386 8 p. |
artikel |
120 |
Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system
|
Bhattacharya, R.N. |
|
1987 |
|
1-4 |
p. 371-377 7 p. |
artikel |
121 |
Photovoltaic safety conference
|
Luft, Werner |
|
1987 |
|
1-4 |
p. 457-458 2 p. |
artikel |
122 |
Photovoltaics for utility-scale applications: project overview and data analysis
|
Smith, Steve |
|
1989 |
|
1-4 |
p. 259-266 8 p. |
artikel |
123 |
Photovoltaics research and development — key to America's energy source
|
Stone, Jack L. |
|
1987 |
|
1-4 |
p. 449- 1 p. |
artikel |
124 |
Picosecond electron transport in hydrogenated amorphous silicon
|
Tauc, J. |
|
1989 |
|
1-4 |
p. 169-175 7 p. |
artikel |
125 |
Practical considerations in tandem cell modeling
|
Wanlass, M.W. |
|
1989 |
|
1-4 |
p. 191-204 14 p. |
artikel |
126 |
Practical guidelines for grid metallization in photovoltaic solar cell research
|
Gessert, T.A. |
|
1991 |
|
1-4 |
p. 459-472 14 p. |
artikel |
127 |
Preface
|
Mrig, Laxmi |
|
1991 |
|
1-4 |
p. 527- 1 p. |
artikel |
128 |
Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe
|
Nouhi, A. |
|
1987 |
|
1-4 |
p. 225-232 8 p. |
artikel |
129 |
Preparation of Cd(Zn)Te and CuInSe2 films and devices by a two-stage process
|
Basol, Bulent M. |
|
1991 |
|
1-4 |
p. 143-150 8 p. |
artikel |
130 |
Preparation of CuInSe2 and CuInS2 films by reactive annealing in H2Se OR H2S
|
Lokhande, Chandrakant D |
|
1987 |
|
1-4 |
p. 215-224 10 p. |
artikel |
131 |
Preparation of solar-grade amorphous silicon from fluorinated silanes
|
Pernisz, U.C |
|
1987 |
|
1-4 |
p. 195-203 9 p. |
artikel |
132 |
Progress on high-efficiency thin film cells and submodules
|
Mitchell, Kim W. |
|
1989 |
|
1-4 |
p. 69-76 8 p. |
artikel |
133 |
Progress on high performance multijunction amorphous hydrogenated silicon alloy based solar cells and modules
|
Catalano, A. |
|
1991 |
|
1-4 |
p. 261-270 10 p. |
artikel |
134 |
Protecting worker health and safety in photovoltaic research and development laboratories
|
Moskowitz, P.D. |
|
1989 |
|
1-4 |
p. 149-158 10 p. |
artikel |
135 |
Quantification of errors arising in ellipsometry
|
Lamorte, M.F. |
|
1989 |
|
1-4 |
p. 477-487 11 p. |
artikel |
136 |
Rapid liquid phase epitaxial growth studies
|
Crisman, E.E. |
|
1987 |
|
1-4 |
p. 458- 1 p. |
artikel |
137 |
Recent advances in multi-junction III–V solar cell development
|
Macmillan, H.F. |
|
1989 |
|
1-4 |
p. 205-217 13 p. |
artikel |
138 |
Recent amorphous silicon research results at the Solar Energy Research Institute
|
Crandall, Richard S. |
|
1991 |
|
1-4 |
p. 15-19 5 p. |
artikel |
139 |
Recent developments in amorphous silicon photovoltaic research and manufacturing at chronar corporation
|
Delahoy, A.E. |
|
1989 |
|
1-4 |
p. 39-57 19 p. |
artikel |
140 |
Recent progress in multichamber deposition of high-quality amorphous silicon solar cells on planar and compound curved substrates at GSI
|
Schropp, R.E.I. |
|
1989 |
|
1-4 |
p. 59-68 10 p. |
artikel |
141 |
Reliability studies of Eureka modules
|
Grez, J. |
|
1991 |
|
1-4 |
p. 559-562 4 p. |
artikel |
142 |
Reproducible integration of multijunction cascade cell components
|
Lewis, C.R. |
|
1987 |
|
1-4 |
p. 253-261 9 p. |
artikel |
143 |
Review of high efficiency multijunction and point contact GaAs solar cell development
|
Hutchby, J.A. |
|
1987 |
|
1-4 |
p. 449- 1 p. |
artikel |
144 |
Review of progress on a-Si alloy solar cell research
|
Catalano, A. |
|
1989 |
|
1-4 |
p. 25-37 13 p. |
artikel |
145 |
Review of the application of molecular beam epitaxy for high efficiency solar cell research
|
Melloch, Michael R. |
|
1991 |
|
1-4 |
p. 313-321 9 p. |
artikel |
146 |
Silicon float-zoned crystal growth for high minority charge-carrier lifetime material applications
|
Ciszek, T.F. |
|
1991 |
|
1-4 |
p. 5-13 9 p. |
artikel |
147 |
Silicon solar cell materials research: current progress and future needs
|
Sopori, Bhushan L. |
|
1991 |
|
1-4 |
p. 373-381 9 p. |
artikel |
148 |
Silyl rotors and amorphous silicon
|
Santos-Filho, P. |
|
1989 |
|
1-4 |
p. 385-390 6 p. |
artikel |
149 |
Small-angle X-ray scattering studies of microvoids in a-SiC:H and a-Si:H
|
Mahan, A.H. |
|
1989 |
|
1-4 |
p. 465-476 12 p. |
artikel |
150 |
Solar cell calibration methods
|
Emery, Keith A. |
|
1989 |
|
1-4 |
p. 445-453 9 p. |
artikel |
151 |
Solarex experience with ethylene vinyl acetate encapsulation
|
Wohlgemuth, John H. |
|
1991 |
|
1-4 |
p. 383-387 5 p. |
artikel |
152 |
Solar radiation research for photovoltaic applications
|
Riordan, C. |
|
1991 |
|
1-4 |
p. 489-500 12 p. |
artikel |
153 |
Solar strategies for escaping the greenhouse heat trap
|
Moomaw, William R. |
|
1989 |
|
1-4 |
p. 11-24 14 p. |
artikel |
154 |
Spectral solar radiation data base, models, and instrumentation
|
Hulstrom, R. |
|
1989 |
|
1-4 |
p. 279-287 9 p. |
artikel |
155 |
Status and directions in high efficiency silicon solar cell research
|
Rohatgi, A. |
|
1987 |
|
1-4 |
p. 450- 1 p. |
artikel |
156 |
Structural characterization of amorphous silicon and germanium
|
Tsu, Raphael |
|
1987 |
|
1-4 |
p. 19-24 6 p. |
artikel |
157 |
Structural, optical, and electrical studies of amorphous hydrogenated germanium
|
Turner, W.A. |
|
1991 |
|
1-4 |
p. 245-254 10 p. |
artikel |
158 |
Study of thermal and light-induced changes in amorphous silicon alloy materials
|
Collis, W.J. |
|
1987 |
|
1-4 |
p. 453- 1 p. |
artikel |
159 |
Subject index
|
|
|
1989 |
|
1-4 |
p. 503-505 3 p. |
artikel |
160 |
Subject index
|
|
|
1987 |
|
1-4 |
p. 463-468 6 p. |
artikel |
161 |
Subject index of volume 30
|
|
|
1991 |
|
1-4 |
p. 575-580 6 p. |
artikel |
162 |
Surface passivation of polycrystalline, chalcogenide based photovoltaic cells
|
Cahen, David |
|
1991 |
|
1-4 |
p. 53-59 7 p. |
artikel |
163 |
Tandem gallium solar cell voltage-matched circuit performance projections
|
Fraas, L.M. |
|
1991 |
|
1-4 |
p. 355-361 7 p. |
artikel |
164 |
Temperature-dependent photoconductivity and light-induced changes in a-Si1−x Ge x:H alloys
|
Xi, J.P |
|
1987 |
|
1-4 |
p. 205-213 9 p. |
artikel |
165 |
Tem studies of atomic ordering in some ternary semiconductors used in photovoltaic applications
|
Goral, J.P. |
|
1989 |
|
1-4 |
p. 429-436 8 p. |
artikel |
166 |
Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells
|
Hu, Jianhua |
|
1991 |
|
1-4 |
p. 437-450 14 p. |
artikel |
167 |
The difference between standard and average efficiencies of multijunction compared with single-junction concentrator cells
|
Kurtz, Sarah R. |
|
1991 |
|
1-4 |
p. 501-513 13 p. |
artikel |
168 |
The effects of impurities on the light-induced degradation of hydrogenated amorphous silicon
|
David Cohen, J. |
|
1991 |
|
1-4 |
p. 293-301 9 p. |
artikel |
169 |
The formation of CuInSe2 thin films by rapid thermal processing
|
Mooney, G.D. |
|
1991 |
|
1-4 |
p. 69-77 9 p. |
artikel |
170 |
Theoretical investigations of the light-induced effects in hydrogenated amorphous silicon
|
Adler, David |
|
1987 |
|
1-4 |
p. 439-448 10 p. |
artikel |
171 |
The phase behavior of evaporated copper and indium precursors for selenization
|
Albin, D.S. |
|
1991 |
|
1-4 |
p. 41-46 6 p. |
artikel |
172 |
The preparation of thin films for photovoltaic conversion by novel metal-organic chemical vapour deposition techniques
|
Saunders, A. |
|
1987 |
|
1-4 |
p. 455- 1 p. |
artikel |
173 |
Thin film approaches for high-efficiency III–V cells
|
Lush, Greg |
|
1991 |
|
1-4 |
p. 337-344 8 p. |
artikel |
174 |
Thin films cadmium telluride solar cells
|
Chu, T.L. |
|
1987 |
|
1-4 |
p. 73-80 8 p. |
artikel |
175 |
Thin films of II–VI compounds and alloys
|
Chu, T.L. |
|
1991 |
|
1-4 |
p. 123-130 8 p. |
artikel |
176 |
Thin-film solar cells with over 21% conversion efficiency
|
Gale, R.P. |
|
1989 |
|
1-4 |
p. 99-106 8 p. |
artikel |
177 |
Thoughts on the microstructure of polycrystalline thin film CuInSe2 and its impact on material and device performance
|
Tuttle, J.R. |
|
1991 |
|
1-4 |
p. 21-38 18 p. |
artikel |
178 |
Three-year performance and reliability analysis of a 4 kW amorphous-silicon photovoltaic system in Michigan
|
Pratt, Robert G. |
|
1991 |
|
1-4 |
p. 535-547 13 p. |
artikel |
179 |
Transmission electron microscopy and scanning electron microscopy characterization of GaP grown by metal-organic chemical vapor deposition on silicon substrates
|
Al-Jassim, M.M. |
|
1987 |
|
1-4 |
p. 459-460 2 p. |
artikel |
180 |
Uncertainty estimates for global solar irradiance measurements used to evaluate PV device performance
|
Myers, Daryl R. |
|
1989 |
|
1-4 |
p. 455-464 10 p. |
artikel |
181 |
Vacuum chemical epitaxial growth of III–V materials for multi-band-gap solar cells
|
McLeod, P.S. |
|
1987 |
|
1-4 |
p. 109-116 8 p. |
artikel |
182 |
Vacuum growth of thin films of ZnSnP2
|
Ajmera, P.K |
|
1987 |
|
1-4 |
p. 291-299 9 p. |
artikel |
183 |
What can we learn from the saturation of light-induced defects in amorphous hydrogenated silicon?
|
Isomura, M. |
|
1991 |
|
1-4 |
p. 177-191 15 p. |
artikel |
184 |
Work in the solid state theory group at the solar energy research institute
|
Zunger, Alex |
|
1987 |
|
1-4 |
p. 458-459 2 p. |
artikel |