| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absolute calibration of 14N(d, α) and 14N(d, p) reactions for surface adsorption studies
|
Davies, J.A.
|
|
1983
|
218 |
1-3 |
p. 141-146
6 p.
|
artikel
|
| 2 |
Accelerator based mass spectrometry of semiconductor materials
|
Anthony, J.M.
|
|
1983
|
218 |
1-3 |
p. 463-467
5 p.
|
artikel
|
| 3 |
Accelerator energy calibration using nonresonant nuclear reactions
|
Scott, D.M.
|
|
1983
|
218 |
1-3 |
p. 154-158
5 p.
|
artikel
|
| 4 |
Accelerator mass spectrometry with 26Al
|
Middleton, R.
|
|
1983
|
218 |
1-3 |
p. 430-438
9 p.
|
artikel
|
| 5 |
A comparison of secondary ion mass spectrometry and auger electron spectroscopy as surface analytical techniques
|
Morgan, A.E.
|
|
1983
|
218 |
1-3 |
p. 401-408
8 p.
|
artikel
|
| 6 |
Adsorption study of hydrogen on a stepped Pt (997) surface using low energy recoil scattering
|
Koeleman, B.J.J.
|
|
1983
|
218 |
1-3 |
p. 225-229
5 p.
|
artikel
|
| 7 |
A modified continuum model for the evaluation of channeling experiments for foreign atom location
|
Beck, K.
|
|
1983
|
218 |
1-3 |
p. 97-102
6 p.
|
artikel
|
| 8 |
Analysis of hydrogen in corrosion product films on amorphous alloy using the elastic recoil detection technique
|
Yamaguchi, S.
|
|
1983
|
218 |
1-3 |
p. 598-600
3 p.
|
artikel
|
| 9 |
A new concept for improved ion and electron lenses — Aberration corrected systems of planar electrostatic deflection elements
|
Dalglish, R.L.
|
|
1983
|
218 |
1-3 |
p. 7-10
4 p.
|
artikel
|
| 10 |
A new measurement of the 429 keV 15N(p,αγ)12C resonance. Applications of the very narrow width fouNd to 15N and 1H depth location
|
Maurel, B.
|
|
1983
|
218 |
1-3 |
p. 159-164
6 p.
|
artikel
|
| 11 |
An experimental study of the surface chemistry and evaporation kinetics of liquid sodium
|
Becker, Christopher H.
|
|
1983
|
218 |
1-3 |
p. 533-536
4 p.
|
artikel
|
| 12 |
Angular distributions and differential sputtering yields of binary compounds as a function of angle of incidence
|
Roth, J.
|
|
1983
|
218 |
1-3 |
p. 751-756
6 p.
|
artikel
|
| 13 |
An in-beam-line low-level system for nuclear reaction γ-rays
|
Damjantschitsch, H.
|
|
1983
|
218 |
1-3 |
p. 129-140
12 p.
|
artikel
|
| 14 |
Application of RBS and PIXE in specific site determination of S and SI in ion implanted GaAs
|
Bhattacharya, R.S.
|
|
1983
|
218 |
1-3 |
p. 515-518
4 p.
|
artikel
|
| 15 |
Application of the Bragg-profiling technique to the analysis of metallurgical and optical surface layers
|
Eichinger, P.
|
|
1983
|
218 |
1-3 |
p. 489-492
4 p.
|
artikel
|
| 16 |
Application of the channeling and X-ray diffraction techniques for defect analysis
|
Kaufmann, R.
|
|
1983
|
218 |
1-3 |
p. 647-651
5 p.
|
artikel
|
| 17 |
Applications of focused ion beams
|
Wagner, Alfred
|
|
1983
|
218 |
1-3 |
p. 355-362
8 p.
|
artikel
|
| 18 |
Applications of simultaneous ion backscattering and ion-induced X-ray emission
|
Musket, R.G.
|
|
1983
|
218 |
1-3 |
p. 420-424
5 p.
|
artikel
|
| 19 |
A Rutherford backscattering study of diffusion in polymers
|
Selen, M.A.
|
|
1983
|
218 |
1-3 |
p. 451-455
5 p.
|
artikel
|
| 20 |
A simple automatic deadtime loss correction system for particle counting processes induced by ion beams with fluctuating intensities
|
Amsel, G.
|
|
1983
|
218 |
1-3 |
p. 16-22
7 p.
|
artikel
|
| 21 |
A study of impurity mobility in ion-implanted Al by Rutherford backscattering
|
Madakson, Peter B.
|
|
1983
|
218 |
1-3 |
p. 537-541
5 p.
|
artikel
|
| 22 |
A study of mixing behavior of AlAg, AlIn and AlSn systems by Ar ion irradiation
|
Fujino, Y.
|
|
1983
|
218 |
1-3 |
p. 691-695
5 p.
|
artikel
|
| 23 |
Auger electron emission from solids during bombardment with MeV ions
|
Saemann-Ischenko, G.
|
|
1983
|
218 |
1-3 |
p. 757-763
7 p.
|
artikel
|
| 24 |
Auger electron emission induced by MeV H+ and He+ ions
|
Macdonald, Jack R.
|
|
1983
|
218 |
1-3 |
p. 765-770
6 p.
|
artikel
|
| 25 |
Author index
|
|
|
1983
|
218 |
1-3 |
p. 827-836
10 p.
|
artikel
|
| 26 |
Axial channeling studies of strained-layer superlattices
|
Picraux, S.T.
|
|
1983
|
218 |
1-3 |
p. 57-62
6 p.
|
artikel
|
| 27 |
Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon
|
Wittmaack, K.
|
|
1983
|
218 |
1-3 |
p. 327-332
6 p.
|
artikel
|
| 28 |
BATTY83: A computer program for thick target PIXE analysis
|
Clayton, E.
|
|
1983
|
218 |
1-3 |
p. 221-224
4 p.
|
artikel
|
| 29 |
Biomolecule mass spectrometry by fast heavy ion induced desorption
|
Sundqvist, Bo
|
|
1983
|
218 |
1-3 |
p. 267-275
9 p.
|
artikel
|
| 30 |
Bombardment induced cascade mixing and the importance of post-cascade relaxation
|
Webb, R.P.
|
|
1983
|
218 |
1-3 |
p. 697-702
6 p.
|
artikel
|
| 31 |
Catalyst metal-support interactions: Rutherford backscattering spectrometry applied to discontinuous films
|
Beglin, J.E.E.
|
|
1983
|
218 |
1-3 |
p. 445-450
6 p.
|
artikel
|
| 32 |
Channeling analysis of thermally nitrided silicon
|
Amano, Jun
|
|
1983
|
218 |
1-3 |
p. 589-592
4 p.
|
artikel
|
| 33 |
Characterisation of a new batch of ion implanted Bi in silicon specimens for use as primary reference surface standards
|
Mitchell, I.V.
|
|
1983
|
218 |
1-3 |
p. 91-96
6 p.
|
artikel
|
| 34 |
Computer simulations of slowing down of ions in polycrystalline materials
|
Hautala, Mikko
|
|
1983
|
218 |
1-3 |
p. 799-802
4 p.
|
artikel
|
| 35 |
Dechanneling analysis of disorder in (100) gallium arsenide
|
Rossiter, K.G.
|
|
1983
|
218 |
1-3 |
p. 639-642
4 p.
|
artikel
|
| 36 |
Defect trapping of hydrogen in iron studied by the 1H(15N, αγ)12C reaction
|
Frech, G.
|
|
1983
|
218 |
1-3 |
p. 500-503
4 p.
|
artikel
|
| 37 |
Depth profiles and microtopology
|
Bird, J.R.
|
|
1983
|
218 |
1-3 |
p. 53-56
4 p.
|
artikel
|
| 38 |
Depth profiling of hydrogen in thin films with the elastic recoil detection technique
|
Cheng, Huan-sheng
|
|
1983
|
218 |
1-3 |
p. 601-606
6 p.
|
artikel
|
| 39 |
Detection of sputtered neutrals by multi-photon resonance ionization
|
Kimock, F.M.
|
|
1983
|
218 |
1-3 |
p. 287-292
6 p.
|
artikel
|
| 40 |
Determination of the displacement field of hydrogen (deuterium) in tantalum by fast ion channeling
|
Müller, R.
|
|
1983
|
218 |
1-3 |
p. 75-80
6 p.
|
artikel
|
| 41 |
Determination of the fluorine distribution in porous silicon using nuclear reaction, XPS and Auger analyses.
|
Earwaker, L.G.
|
|
1983
|
218 |
1-3 |
p. 481-484
4 p.
|
artikel
|
| 42 |
Editorial Board
|
|
|
1983
|
218 |
1-3 |
p. ii-
1 p.
|
artikel
|
| 43 |
Elastic recoil detection analysis of light particles (1H16O) using 30 MeV sulphur ions
|
Nölscher, C.
|
|
1983
|
218 |
1-3 |
p. 116-119
4 p.
|
artikel
|
| 44 |
Electronic excitation of Ti atoms sputtered by energetic Ar+ and He+ from clean and monolayer oxygen covered surfaces
|
Pellin, M.J.
|
|
1983
|
218 |
1-3 |
p. 771-776
6 p.
|
artikel
|
| 45 |
Elemental analysis of algae with PIXE and PIGME
|
MacArthur, J.D.
|
|
1983
|
218 |
1-3 |
p. 519-524
6 p.
|
artikel
|
| 46 |
Energy and mass analysis of secondary ions sputtered from metallic targets by MeV heavy ions
|
O'Connor, John P.
|
|
1983
|
218 |
1-3 |
p. 293-298
6 p.
|
artikel
|
| 47 |
Energy-loss radiography with a scanning MeV-ion microprobe
|
Overley, J.C.
|
|
1983
|
218 |
1-3 |
p. 43-46
4 p.
|
artikel
|
| 48 |
Evaluation of a liquid metal ion source for secondary ion mass spectrometry
|
Gnaser, H.
|
|
1983
|
218 |
1-3 |
p. 303-306
4 p.
|
artikel
|
| 49 |
Heavy ion energy straggling
|
Anthony, J.M.
|
|
1983
|
218 |
1-3 |
p. 803-809
7 p.
|
artikel
|
| 50 |
Helium-induced hydrogen recoil analysis for metallurgical applications
|
Wielunski, L.S.
|
|
1983
|
218 |
1-3 |
p. 120-124
5 p.
|
artikel
|
| 51 |
High energy ion microprobes
|
Nobiling, Rainer
|
|
1983
|
218 |
1-3 |
p. 197-202
6 p.
|
artikel
|
| 52 |
High precision SIMS measurements of dopant concentration in III–V semiconductors
|
Miller, Jeffrey N.
|
|
1983
|
218 |
1-3 |
p. 547-550
4 p.
|
artikel
|
| 53 |
High resolution depth profiling of F, Ne and Na in materials
|
Deconninck, G.
|
|
1983
|
218 |
1-3 |
p. 165-170
6 p.
|
artikel
|
| 54 |
High resolution depth profiling of light elements in high atomic mass materials
|
Thomas, J.P.
|
|
1983
|
218 |
1-3 |
p. 125-128
4 p.
|
artikel
|
| 55 |
High resolution techniques for nuclear reaction narrow resonance width measurements and for shallow depth profiling
|
Amsel, G.
|
|
1983
|
218 |
1-3 |
p. 183-196
14 p.
|
artikel
|
| 56 |
In situ rutherford backscattering measurements of ion-beam-induced atomic mixing
|
Jorch, H.H.
|
|
1983
|
218 |
1-3 |
p. 703-706
4 p.
|
artikel
|
| 57 |
Instrumental cross-contamination in the Cameca IMS-3F secondary ion microscope
|
Deline, Vaughn R.
|
|
1983
|
218 |
1-3 |
p. 316-318
3 p.
|
artikel
|
| 58 |
Interactive computer analysis of nuclear backscattering spectra
|
Saunders, Philip A.
|
|
1983
|
218 |
1-3 |
p. 67-74
8 p.
|
artikel
|
| 59 |
Intercomparison of absolute standards for RBS studies
|
Cohen, C.
|
|
1983
|
218 |
1-3 |
p. 147-148
2 p.
|
artikel
|
| 60 |
Interstitial trapping in Fe-implanted Al after excimer laser annealing
|
Swanson, M.L.
|
|
1983
|
218 |
1-3 |
p. 643-646
4 p.
|
artikel
|
| 61 |
Intrinsic and effective sensitivities of analysis by X-ray fluorescence induced by protons, electrons, and photons
|
Grodzins, L.
|
|
1983
|
218 |
1-3 |
p. 203-208
6 p.
|
artikel
|
| 62 |
Investigation of damage produced by self-implantation of tellurium
|
Wu, M.F.
|
|
1983
|
218 |
1-3 |
p. 652-657
6 p.
|
artikel
|
| 63 |
Investigation of soft upsets in integrated circuit memories and charge collection in semiconductor test structures by the use of an ion microbeam
|
Knudson, A.R.
|
|
1983
|
218 |
1-3 |
p. 625-631
7 p.
|
artikel
|
| 64 |
Ion beam analysis of defect trapping
|
Swanson, M.L.
|
|
1983
|
218 |
1-3 |
p. 613-624
12 p.
|
artikel
|
| 65 |
Ion beam analysis of powdered samples
|
Sellschop, J.P.F.
|
|
1983
|
218 |
1-3 |
p. 593-597
5 p.
|
artikel
|
| 66 |
Ion beam analysis techniques and characterization of amorphous hydrogenated GaAs
|
Thomas, J.P.
|
|
1983
|
218 |
1-3 |
p. 579-583
5 p.
|
artikel
|
| 67 |
Ion beam detection of the austenitic-martensitic phase transformation of single crystal stainless steel
|
Besenbacher, Flemming
|
|
1983
|
218 |
1-3 |
p. 551-554
4 p.
|
artikel
|
| 68 |
Ion beam dosimetry by Rutherford backscattering with continuous rotation of the sample
|
Hemment, P.L.F.
|
|
1983
|
218 |
1-3 |
p. 103-106
4 p.
|
artikel
|
| 69 |
Ion channeling and TEM studies of pulse melted Fe(Pd) alloys
|
Knapp, J.A.
|
|
1983
|
218 |
1-3 |
p. 542-546
5 p.
|
artikel
|
| 70 |
Ion channeling study of radiation induced defects in a bent silicon crystal
|
Wang, G.H.
|
|
1983
|
218 |
1-3 |
p. 669-672
4 p.
|
artikel
|
| 71 |
Ion desorption spectrometry: A new method of surface investigation
|
Schneider, Peter J.
|
|
1983
|
218 |
1-3 |
p. 713-718
6 p.
|
artikel
|
| 72 |
Ion-electron emission from magnetostrictive alloy
|
Soszka, M.
|
|
1983
|
218 |
1-3 |
p. 782-784
3 p.
|
artikel
|
| 73 |
Ion-induced chemistry in condensed gas solids
|
Boring, J.W.
|
|
1983
|
218 |
1-3 |
p. 707-711
5 p.
|
artikel
|
| 74 |
Ionization of atoms sputtered from AIIIBV compounds
|
Šroubek, Z.
|
|
1983
|
218 |
1-3 |
p. 336-339
4 p.
|
artikel
|
| 75 |
Ion neutralisation in secondary ion mass spectrometry
|
Garrett, R.F.
|
|
1983
|
218 |
1-3 |
p. 333-335
3 p.
|
artikel
|
| 76 |
Ion sputtered deposit analysis by electron microscopy
|
Lundquist, T.R.
|
|
1983
|
218 |
1-3 |
p. 563-565
3 p.
|
artikel
|
| 77 |
Kinetic energy distributions of sputtered particles in non-casade sputtering processes
|
Ziv, A.R.
|
|
1983
|
218 |
1-3 |
p. 742-746
5 p.
|
artikel
|
| 78 |
Lateral variation measurement of helium concentration in implanted Al foils using a proton microbeam
|
Bodart, F.
|
|
1983
|
218 |
1-3 |
p. 529-532
4 p.
|
artikel
|
| 79 |
Li, B and N in ancient materials
|
Fink, D.
|
|
1983
|
218 |
1-3 |
p. 456-462
7 p.
|
artikel
|
| 80 |
Liquid metal ion sources: Mechanism and applications
|
Swanson, L.W.
|
|
1983
|
218 |
1-3 |
p. 347-353
7 p.
|
artikel
|
| 81 |
Low energy ion scattering for the determination of the locations of surface atoms
|
Niehus, H.
|
|
1983
|
218 |
1-3 |
p. 230-234
5 p.
|
artikel
|
| 82 |
Low-energy ion scattering from the Si(111) surface: Analysis of the clean 7×7 and Te-stabilized “1×1” structures
|
Aono, M.
|
|
1983
|
218 |
1-3 |
p. 241-247
7 p.
|
artikel
|
| 83 |
Low energy ion scattering study of MoO3BiPO4 biphase catalysts
|
Bertrand, P.
|
|
1983
|
218 |
1-3 |
p. 249-252
4 p.
|
artikel
|
| 84 |
Low energy ion scattering study of palladium films on silicon(111)-7 × 7 surfaces
|
Oura, K.
|
|
1983
|
218 |
1-3 |
p. 253-256
4 p.
|
artikel
|
| 85 |
Low-temperature ion-beam mixing of platinum markers in iron
|
Bøttiger, J.
|
|
1983
|
218 |
1-3 |
p. 684-686
3 p.
|
artikel
|
| 86 |
L subshell ionization cross section for light ion bombardment of high Z targets
|
Cohen, D.D.
|
|
1983
|
218 |
1-3 |
p. 795-798
4 p.
|
artikel
|
| 87 |
Mass-separated microbeam system with a liquid-metal-ion source
|
Ishitani, T.
|
|
1983
|
218 |
1-3 |
p. 363-367
5 p.
|
artikel
|
| 88 |
Metal deposition for microelectronic applications studied by RBS technique
|
Eskildsen, Svend Stensig
|
|
1983
|
218 |
1-3 |
p. 485-488
4 p.
|
artikel
|
| 89 |
MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon
|
Inada, T.
|
|
1983
|
218 |
1-3 |
p. 607-611
5 p.
|
artikel
|
| 90 |
Multiple-collision analysis of characteristic X-rays from low-energy Ar2+ travelling in solid targets
|
Cipolla, Sam J.
|
|
1983
|
218 |
1-3 |
p. 777-781
5 p.
|
artikel
|
| 91 |
Neutron depth profiling at the National Bureau of Standards
|
Downing, R.G.
|
|
1983
|
218 |
1-3 |
p. 47-51
5 p.
|
artikel
|
| 92 |
Nitrogen depth profiling using the 14N(n,p)4C reaction
|
Fink, D.
|
|
1983
|
218 |
1-3 |
p. 171-175
5 p.
|
artikel
|
| 93 |
Non-vacuum Rutherford backscattering spectrometry
|
Doyle, B.L.
|
|
1983
|
218 |
1-3 |
p. 29-32
4 p.
|
artikel
|
| 94 |
Optimization and application of glancing angle Rutherford backscattering spectrometry
|
Tamminga, Y.
|
|
1983
|
218 |
1-3 |
p. 107-110
4 p.
|
artikel
|
| 95 |
Oxygen and hydrogen on the surface of diamond
|
Derry, T.E.
|
|
1983
|
218 |
1-3 |
p. 559-562
4 p.
|
artikel
|
| 96 |
Oxygen-concentration dependent enhancement of positive secondary ion emission from silicon
|
Gnaser, H.
|
|
1983
|
218 |
1-3 |
p. 312-315
4 p.
|
artikel
|
| 97 |
PIXE analysis of compound materials
|
Kalish, R.
|
|
1983
|
218 |
1-3 |
p. 415-419
5 p.
|
artikel
|
| 98 |
Planar dechanneling studies of strained-layer superlattice structures
|
Chu, W.K.
|
|
1983
|
218 |
1-3 |
p. 81-89
9 p.
|
artikel
|
| 99 |
Positron analysis as a quantitative technique in ion beam analysis
|
Sellschop, J.P.F.
|
|
1983
|
218 |
1-3 |
p. 23-28
6 p.
|
artikel
|
| 100 |
Precision standard reference targets for microanalysis by nuclear reactions
|
Amsel, G.
|
|
1983
|
218 |
1-3 |
p. 177-182
6 p.
|
artikel
|
| 101 |
Preface
|
|
|
1983
|
218 |
1-3 |
p. vii-
1 p.
|
artikel
|
| 102 |
Probing of lattice defects by radioactive atoms
|
Wichert, Th.
|
|
1983
|
218 |
1-3 |
p. 633-638
6 p.
|
artikel
|
| 103 |
Proton energies at the maximum of the electronic stopping cross section in materials with 57⩽Z 2⩽83
|
Krist, Th.
|
|
1983
|
218 |
1-3 |
p. 790-794
5 p.
|
artikel
|
| 104 |
Quantification of hydrogen in solids by two methods of ion beam analysis
|
Madiba, C.C.P.
|
|
1983
|
218 |
1-3 |
p. 409-414
6 p.
|
artikel
|
| 105 |
Quantitative analysis of first and second surface layers by LEIS (TOF)
|
Buck, T.M.
|
|
1983
|
218 |
1-3 |
p. 257-265
9 p.
|
artikel
|
| 106 |
Quantitative analysis of light elements in a heavy material by high energy ion recoil (heir) spectrometry
|
Moreau, C.
|
|
1983
|
218 |
1-3 |
p. 111-115
5 p.
|
artikel
|
| 107 |
Quantitative SIMS analysis of hydrogenated amorphous silicon using superimposed deuterium implant standards
|
Williams, Peter
|
|
1983
|
218 |
1-3 |
p. 299-302
4 p.
|
artikel
|
| 108 |
Radiation damage in InSb single crystals by α-particle bombardment
|
Friedland, E.
|
|
1983
|
218 |
1-3 |
p. 658-662
5 p.
|
artikel
|
| 109 |
Ranges of some 20–100 keV light ions in Si and Ge
|
Paltemaa, R.
|
|
1983
|
218 |
1-3 |
p. 785-789
5 p.
|
artikel
|
| 110 |
Rutherford backscattering analysis of multilayered CrNi structures to be used for sputtering standards
|
Simons, Donald G.
|
|
1983
|
218 |
1-3 |
p. 585-588
4 p.
|
artikel
|
| 111 |
Rutherford backscattering analysis of silicide formation in MoSi structures by ion implantation
|
Inada, T.
|
|
1983
|
218 |
1-3 |
p. 567-572
6 p.
|
artikel
|
| 112 |
Rutherford backscattering and channeling analysis of epitaxial, low-mass films on high-mass substrates
|
Golecki, I.
|
|
1983
|
218 |
1-3 |
p. 63-66
4 p.
|
artikel
|
| 113 |
Scanning MeV-ion microprobe for light and heavy ions
|
Lefevre, H.W.
|
|
1983
|
218 |
1-3 |
p. 39-42
4 p.
|
artikel
|
| 114 |
Search for an influence of the measuring method on stopping cross section data near the maximum
|
Semrad, D.
|
|
1983
|
218 |
1-3 |
p. 811-816
6 p.
|
artikel
|
| 115 |
Secondary ion imaging in the scanning ion microscope
|
Levi-Setti, Riccardo
|
|
1983
|
218 |
1-3 |
p. 368-374
7 p.
|
artikel
|
| 116 |
Secondary ion mass spectrometry: High-mass molecular and cluster ions
|
Colton, Richard J.
|
|
1983
|
218 |
1-3 |
p. 276-286
11 p.
|
artikel
|
| 117 |
Self sputtering on cobalt single crystals
|
Johansen, A.
|
|
1983
|
218 |
1-3 |
p. 737-741
5 p.
|
artikel
|
| 118 |
Sensitivity amplication by sample preconcentration in ion beam analysis
|
Annegarn, H.J.
|
|
1983
|
218 |
1-3 |
p. 33-38
6 p.
|
artikel
|
| 119 |
Shape of the target region affected by the cascade recoils
|
Andreadis, T.D.
|
|
1983
|
218 |
1-3 |
p. 747-750
4 p.
|
artikel
|
| 120 |
SIMS analysis of silicon on insulator structures formed by high-dose O+ implantation into silicon
|
Kilner, J.A.
|
|
1983
|
218 |
1-3 |
p. 573-578
6 p.
|
artikel
|
| 121 |
SIMS micro-analysis with a gallium ion microprobe
|
Bayly, A.R.
|
|
1983
|
218 |
1-3 |
p. 375-382
8 p.
|
artikel
|
| 122 |
Simultaneous high depth resolution profiling of carbon and oxygen
|
Gossett, C.R.
|
|
1983
|
218 |
1-3 |
p. 149-153
5 p.
|
artikel
|
| 123 |
Some properties of the relocation function in ion beam collisional mixing
|
Roosendaal, H.E.
|
|
1983
|
218 |
1-3 |
p. 673-678
6 p.
|
artikel
|
| 124 |
Stopping ratios for 30–330 keV light ions in materials with 57⩽Z 2⩽83
|
Krist, Th.
|
|
1983
|
218 |
1-3 |
p. 821-826
6 p.
|
artikel
|
| 125 |
Surface analysis using scattered primary and recoiled secondary neutrals and ions by TOF and ESA techniques
|
Wayne Rabalais, J.
|
|
1983
|
218 |
1-3 |
p. 719-726
8 p.
|
artikel
|
| 126 |
Surface modification using MeV ion beams
|
Tombrello, T.A.
|
|
1983
|
218 |
1-3 |
p. 679-683
5 p.
|
artikel
|
| 127 |
Surface structural determination of UO2(111) using MeV ions
|
Thompson, K.A.
|
|
1983
|
218 |
1-3 |
p. 475-479
5 p.
|
artikel
|
| 128 |
Surface structure analysis from low-energy ion backscattering angular distributions
|
Williams, R.Stanley
|
|
1983
|
218 |
1-3 |
p. 235-240
6 p.
|
artikel
|
| 129 |
Target preparation for radiocarbon dating by tandem accelerator mass spectrometry
|
Jull, A.J.T.
|
|
1983
|
218 |
1-3 |
p. 509-514
6 p.
|
artikel
|
| 130 |
Techniques for the compositional and chemical state analysis of surfaces and thin films
|
Reuter, W.
|
|
1983
|
218 |
1-3 |
p. 391-399
9 p.
|
artikel
|
| 131 |
The analysis for light elements of hard gold electrodeposits
|
Bentley, A.J.
|
|
1983
|
218 |
1-3 |
p. 555-558
4 p.
|
artikel
|
| 132 |
The 12 C(α,α)12 C nuclear resonance at 4.26 MeV and its application in RBS analysis of carbon content in thin films
|
Östling, M.
|
|
1983
|
218 |
1-3 |
p. 439-444
6 p.
|
artikel
|
| 133 |
The creation and annihilation of vacancy-solute complexes during irradiation of Ni(In) and Ni(Au) crystals
|
Howe, L.M.
|
|
1983
|
218 |
1-3 |
p. 663-668
6 p.
|
artikel
|
| 134 |
The creation of surface damage by ion-beam bombardment
|
Harrison Jr., D.E.
|
|
1983
|
218 |
1-3 |
p. 727-736
10 p.
|
artikel
|
| 135 |
The determination of the oxygen self-diffusion and gas-solid exchange coefficients for stabilized zirconia by SIMS
|
Tannhauser, D.S.
|
|
1983
|
218 |
1-3 |
p. 504-508
5 p.
|
artikel
|
| 136 |
The effect of oxygen adsorption on CuNi alloys during irradiation studied by SIMS, SIPS and ISS
|
Loxton, C.M.
|
|
1983
|
218 |
1-3 |
p. 340-346
7 p.
|
artikel
|
| 137 |
The effect of the angle of incidence on secondary ion yields of oxygen-bombarded solids
|
Wittmaack, K.
|
|
1983
|
218 |
1-3 |
p. 307-311
5 p.
|
artikel
|
| 138 |
The French AEC nuclear microprobe: Description and first application examples
|
Engelmann, Charles
|
|
1983
|
218 |
1-3 |
p. 209-216
8 p.
|
artikel
|
| 139 |
The influence of atomic mixing on SIMS depth profiling of thin buried layers
|
King, B.V.
|
|
1983
|
218 |
1-3 |
p. 687-690
4 p.
|
artikel
|
| 140 |
The PIGME method for fluorine determination
|
Bird, J.R.
|
|
1983
|
218 |
1-3 |
p. 525-528
4 p.
|
artikel
|
| 141 |
The use of accelerators for arhaeological dating
|
Donahue, D.J.
|
|
1983
|
218 |
1-3 |
p. 425-429
5 p.
|
artikel
|
| 142 |
The use of He microbeams for light element X-ray analysis of biological tissue
|
Sealock, R.M.
|
|
1983
|
218 |
1-3 |
p. 217-220
4 p.
|
artikel
|
| 143 |
The velocity dependence of secondary ion fields
|
Vasile, M.J.
|
|
1983
|
218 |
1-3 |
p. 319-323
5 p.
|
artikel
|
| 144 |
Time-of-flight atom-probe field ion microscope analysis of thin films: Surface segregation of alloys and early stages of silicide formation
|
Tsong, T.T.
|
|
1983
|
218 |
1-3 |
p. 383-390
8 p.
|
artikel
|
| 145 |
Time of flight spectrometry in heavy ion backscattering analysis
|
Chevarier, A.
|
|
1983
|
218 |
1-3 |
p. 1-5
5 p.
|
artikel
|
| 146 |
Time-of-flight system for profiling recoiled light elements
|
Groleau, R.
|
|
1983
|
218 |
1-3 |
p. 11-15
5 p.
|
artikel
|
| 147 |
Use of ion beam techniques for studying the leaching properties of lead implanted silicates
|
Della Mea, G.
|
|
1983
|
218 |
1-3 |
p. 493-499
7 p.
|
artikel
|
| 148 |
Use of ISS and doubly charged secondary ions to monitor surface composition during SIMS analyses
|
Reed, David A.
|
|
1983
|
218 |
1-3 |
p. 324-326
3 p.
|
artikel
|
| 149 |
Wear traces and patination on Danish flint artefacts
|
Andersen, Hans Henrik
|
|
1983
|
218 |
1-3 |
p. 468-474
7 p.
|
artikel
|
| 150 |
Z 2 stopping power oscillations as derived from range measurements
|
Fink, D.
|
|
1983
|
218 |
1-3 |
p. 817-820
4 p.
|
artikel
|
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