| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acoustic emission induced by ion implantation
|
Adliene, D.
|
|
1983
|
201-210 |
P1 |
p. 357-362
6 p.
|
artikel
|
| 2 |
A model of the surface binding energy for fcc copper-nickel alloy
|
William Reynolds, G.
|
|
1983
|
201-210 |
P1 |
p. 57-61
5 p.
|
artikel
|
| 3 |
Amorphous film formation by ion mixing in binary metal systems
|
Liu, Bai-Xin
|
|
1983
|
201-210 |
P1 |
p. 229-234
6 p.
|
artikel
|
| 4 |
Amorphous gallium produced by low-temperature irradiation — a test of the energy spike concept
|
Goerlach, U.
|
|
1983
|
201-210 |
P1 |
p. 235-238
4 p.
|
artikel
|
| 5 |
A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies
|
Giles, M.D.
|
|
1983
|
201-210 |
P1 |
p. 33-36
4 p.
|
artikel
|
| 6 |
Anomalous near-surface effects in room temperature implanted germanium
|
Lawson, E.M.
|
|
1983
|
201-210 |
P1 |
p. 303-307
5 p.
|
artikel
|
| 7 |
Auger electron emission from the decay of collisionally-excited atoms sputtered from Al and Si
|
Andreadis, T.D.
|
|
1983
|
201-210 |
P1 |
p. 495-502
8 p.
|
artikel
|
| 8 |
Boron-doped dependent sites of iodine in silicon
|
Boerma, D.O.
|
|
1983
|
201-210 |
P1 |
p. 375-379
5 p.
|
artikel
|
| 9 |
Calculation of ion implanted boron emitter profiles
|
Ba̧kowski, Aleksander
|
|
1983
|
201-210 |
P1 |
p. 27-31
5 p.
|
artikel
|
| 10 |
Cascade effects in mass-dependent preferential recoil implantation
|
Roush, M.L.
|
|
1983
|
201-210 |
P1 |
p. 67-78
12 p.
|
artikel
|
| 11 |
Channelinng and teM studies on Sb+ implanted Ni
|
Al-Tamimi, Z.Y.A.
|
|
1983
|
201-210 |
P1 |
p. 363-369
7 p.
|
artikel
|
| 12 |
Characterization of ion-implanted Si by electronic and structural data
|
Pető, G.
|
|
1983
|
201-210 |
P1 |
p. 447-452
6 p.
|
artikel
|
| 13 |
Chemical effects induced by ion implantation in molecular solids
|
Foti, Gaetano
|
|
1983
|
201-210 |
P1 |
p. 87-96
10 p.
|
artikel
|
| 14 |
Chemical effects in ion mixing of transition metals on SiO2
|
Banwell, T.
|
|
1983
|
201-210 |
P1 |
p. 125-129
5 p.
|
artikel
|
| 15 |
Coherent precipitate formation in Tl implanted Si
|
Appleton, B.R.
|
|
1983
|
201-210 |
P1 |
p. 239-242
4 p.
|
artikel
|
| 16 |
Committees
|
|
|
1983
|
201-210 |
P1 |
p. viii-
1 p.
|
artikel
|
| 17 |
Computer study of self-sputtering of Cu and Ni at 90 keV
|
Rosen, M.
|
|
1983
|
201-210 |
P1 |
p. 63-66
4 p.
|
artikel
|
| 18 |
Conversion electron Mössbauer spectroscopy and (p, αγ) nuclear reaction studies of 15N implanted steels
|
Marest, G.
|
|
1983
|
201-210 |
P1 |
p. 259-265
7 p.
|
artikel
|
| 19 |
Corrosion of metastable iron alloys in aqueous solutions
|
Wolf, Gerhard K.
|
|
1983
|
201-210 |
P1 |
p. 197-202
6 p.
|
artikel
|
| 20 |
Deep levels in arsenic implanted silicon
|
Krynicki, J.
|
|
1983
|
201-210 |
P1 |
p. 437-440
4 p.
|
artikel
|
| 21 |
Defects and property changes in ion and neutron irradiated metallic glasses
|
Grundy, P.J.
|
|
1983
|
201-210 |
P1 |
p. 421-426
6 p.
|
artikel
|
| 22 |
Editorial Board
|
|
|
1983
|
201-210 |
P1 |
p. ii-
1 p.
|
artikel
|
| 23 |
Effect of recoil atoms on resolution in ion-beam lithography
|
Karapiperis, L.
|
|
1983
|
201-210 |
P1 |
p. 165-171
7 p.
|
artikel
|
| 24 |
Electrical conductivity modification in iron implanted MgO
|
Perez, A.
|
|
1983
|
201-210 |
P1 |
p. 281-287
7 p.
|
artikel
|
| 25 |
ESR studies on pet irradiated with high energy ions
|
Chipară, Mircea Ioan
|
|
1983
|
201-210 |
P1 |
p. 395-400
6 p.
|
artikel
|
| 26 |
Evidence for an insulator-metal effect on the Z 1-range oscillations in the nuclear stopping regime
|
Berthold, J.
|
|
1983
|
201-210 |
P1 |
p. 13-18
6 p.
|
artikel
|
| 27 |
Extended solubility and martensitic hcp nickel formation in antimony implanted nickel
|
Johnson, E.
|
|
1983
|
201-210 |
P1 |
p. 289-295
7 p.
|
artikel
|
| 28 |
Flaking and wave-like structure on metallic glasses induced by MeV-Energy helium ions
|
Pászti, F.
|
|
1983
|
201-210 |
P1 |
p. 273-280
8 p.
|
artikel
|
| 29 |
Formation of buried insulating layers in silicon by the implantation of high doses of oxygen
|
Hemment, P.L.F.
|
|
1983
|
201-210 |
P1 |
p. 157-164
8 p.
|
artikel
|
| 30 |
Formation of compounds by metalloid ion implantation in iron
|
Hohmuth, K.
|
|
1983
|
201-210 |
P1 |
p. 249-257
9 p.
|
artikel
|
| 31 |
Formation of dislocations during high dose boron implantation into silicon
|
Grob, J.J.
|
|
1983
|
201-210 |
P1 |
p. 413-419
7 p.
|
artikel
|
| 32 |
Gettering by ion implantation
|
Lecrosnier, D.
|
|
1983
|
201-210 |
P1 |
p. 325-332
8 p.
|
artikel
|
| 33 |
Hafnium-implanted nickel studied with TDPAC and RBS/channeling before and after laser surface melting and thermal annealing
|
Kaufmann, E.N.
|
|
1983
|
201-210 |
P1 |
p. 427-436
10 p.
|
artikel
|
| 34 |
Helium bubble and blister formation for nickel and an amorphous FeNiMoB alloy during 5 keV He+ -irradiation at temperatures between 200 K and 600 K
|
Van Swijgenhoven, H.
|
|
1983
|
201-210 |
P1 |
p. 461-468
8 p.
|
artikel
|
| 35 |
Helium-bubble formation and void swelling in nimonic PE16 alloy under dual-ion (He+, Ni+) irradiation
|
Bond, G.M.
|
|
1983
|
201-210 |
P1 |
p. 381-386
6 p.
|
artikel
|
| 36 |
Impact-energy dependence of atomic mixing and selective sputtering of light impurities in cesium-bombarded silicon
|
Wittmaack, K.
|
|
1983
|
201-210 |
P1 |
p. 191-195
5 p.
|
artikel
|
| 37 |
Implantation, ion beam mixing and solid state solubility
|
Martin, G.
|
|
1983
|
201-210 |
P1 |
p. 203-210
8 p.
|
artikel
|
| 38 |
Ion-beam mixing in AuAl thin film bilayers
|
Campisano, S.U.
|
|
1983
|
201-210 |
P1 |
p. 139-145
7 p.
|
artikel
|
| 39 |
Ion-beam mixing in silicon and germanium at low temperatures
|
Clark, G.J.
|
|
1983
|
201-210 |
P1 |
p. 107-114
8 p.
|
artikel
|
| 40 |
Ion-beam mixing to create thermoelectric properties in alloys
|
Benenson, R.E.
|
|
1983
|
201-210 |
P1 |
p. 185-189
5 p.
|
artikel
|
| 41 |
Ion-beam modification of SnO2: Predictions and observations
|
Kelly, Roger
|
|
1983
|
201-210 |
P1 |
p. 531-541
11 p.
|
artikel
|
| 42 |
Ion bombardment of resists
|
Adesida, Ilesanmi
|
|
1983
|
201-210 |
P1 |
p. 79-86
8 p.
|
artikel
|
| 43 |
Ion implantation induced amorphous transformation in a TiNi alloy
|
Moine, P.
|
|
1983
|
201-210 |
P1 |
p. 267-272
6 p.
|
artikel
|
| 44 |
Ion-induced structure modification of thin molybdenum-nickel films
|
Lawson, R.P.W.
|
|
1983
|
201-210 |
P1 |
p. 243-247
5 p.
|
artikel
|
| 45 |
Ion mixing and phase diagrams
|
Lau, S.S.
|
|
1983
|
201-210 |
P1 |
p. 97-105
9 p.
|
artikel
|
| 46 |
Ion range distributions in oxides
|
Hautala, M.
|
|
1983
|
201-210 |
P1 |
p. 37-41
5 p.
|
artikel
|
| 47 |
La formation des cloques
|
Saint-Jacques, R.G.
|
|
1983
|
201-210 |
P1 |
p. 333-343
11 p.
|
artikel
|
| 48 |
Laser and ion-beam mixing of Cu-Au-Cu and Cu-W-Cu thin films
|
Wang, Z.L.
|
|
1983
|
201-210 |
P1 |
p. 115-124
10 p.
|
artikel
|
| 49 |
Lattice orientation of defects in ion-implanted diamond
|
Braunstein, G.
|
|
1983
|
201-210 |
P1 |
p. 387-393
7 p.
|
artikel
|
| 50 |
Measurement of time-dependent sputter-induced silver segregation at the surface of a NiAg ion beam mixed solid
|
Fine, Joseph
|
|
1983
|
201-210 |
P1 |
p. 521-530
10 p.
|
artikel
|
| 51 |
Mechanical response of single crystal Si to very high fluence H+ implantation
|
Choyke, W.J.
|
|
1983
|
201-210 |
P1 |
p. 407-412
6 p.
|
artikel
|
| 52 |
Mechanism of emission of Si I, Si II, and Si III from Si which is ion-bombarded in the presence of oxygen
|
Kelly, Roger
|
|
1983
|
201-210 |
P1 |
p. 509-512
4 p.
|
artikel
|
| 53 |
Mössbauer studies of impurity-vacancy complexes in ion-implanted platinum
|
Niesen, L.
|
|
1983
|
201-210 |
P1 |
p. 441-446
6 p.
|
artikel
|
| 54 |
On the nature of active centers and their interactions
|
Chiparǎ, Mircea Ioan
|
|
1983
|
201-210 |
P1 |
p. 401-405
5 p.
|
artikel
|
| 55 |
On the pole of physical sputtering in reactive ion beam etching
|
Zalm, P.C.
|
|
1983
|
201-210 |
P1 |
p. 561-565
5 p.
|
artikel
|
| 56 |
Preface
|
Biasse, B.
|
|
1983
|
201-210 |
P1 |
p. vii-
1 p.
|
artikel
|
| 57 |
Production and stability of implanted Pd-Si hybride
|
Traverse, A.
|
|
1983
|
201-210 |
P1 |
p. 313-315
3 p.
|
artikel
|
| 58 |
Profile evolution during ion beam etching of germanium targets
|
Wilson, I.H.
|
|
1983
|
201-210 |
P1 |
p. 549-554
6 p.
|
artikel
|
| 59 |
Projection factors of low-energy ion ranges
|
Mannsperger, H.
|
|
1983
|
201-210 |
P1 |
p. 49-55
7 p.
|
artikel
|
| 60 |
Properties of amorphous silicon produced by ion implantation: Thermal annealing
|
Spitzer, W.G.
|
|
1983
|
201-210 |
P1 |
p. 309-312
4 p.
|
artikel
|
| 61 |
Pulse implantation doping - concentration profiles and surface morphology
|
Piekoszewski, Jerzy
|
|
1983
|
201-210 |
P1 |
p. 477-482
6 p.
|
artikel
|
| 62 |
Range distributions in binary targets
|
Jimenez-Rodriguez, J.J.
|
|
1983
|
201-210 |
P1 |
p. 43-47
5 p.
|
artikel
|
| 63 |
Reduction in the thermal reaction barrier for the formation of MnBi thin films by ion-beam mixing technique
|
Godbole, V.P.
|
|
1983
|
201-210 |
P1 |
p. 131-137
7 p.
|
artikel
|
| 64 |
Shifts of dilute Pt impurities in amorphous Si by ion irradiation
|
Paine, B.M.
|
|
1983
|
201-210 |
P1 |
p. 173-177
5 p.
|
artikel
|
| 65 |
Shock-like processes in ion-solid interactions
|
Carter, G.
|
|
1983
|
201-210 |
P1 |
p. 1-11
11 p.
|
artikel
|
| 66 |
Solid phase epitaxial regrowth phenomena in silicon
|
Williams, J.S.
|
|
1983
|
201-210 |
P1 |
p. 219-228
10 p.
|
artikel
|
| 67 |
Some thermodynamic properties of amorphous Si
|
Poate, J.M.
|
|
1983
|
201-210 |
P1 |
p. 211-217
7 p.
|
artikel
|
| 68 |
Sputtering of insulators due to electronic excitation, by fast ions and electrons
|
Johnson, R.E.
|
|
1983
|
201-210 |
P1 |
p. 469-476
8 p.
|
artikel
|
| 69 |
Sputtering of two alloy systems by polyatomic ions: AgAu and CuZn
|
Vozzo, F.R.
|
|
1983
|
201-210 |
P1 |
p. 555-560
6 p.
|
artikel
|
| 70 |
Sputtering on cobalt with noble gas ions
|
Sarholt-Kristensen, L.
|
|
1983
|
201-210 |
P1 |
p. 543-548
6 p.
|
artikel
|
| 71 |
Structural alterations in SiC as a result of Cr+ and N+ implantation
|
Williams, J.M.
|
|
1983
|
201-210 |
P1 |
p. 317-323
7 p.
|
artikel
|
| 72 |
Surface segregation during alloy sputtering and implantation
|
Andersen, Hans Henrik
|
|
1983
|
201-210 |
P1 |
p. 487-494
8 p.
|
artikel
|
| 73 |
Temperature and diffusion effects in preferential sputtering of CrSi2
|
Fernandez, R.
|
|
1983
|
201-210 |
P1 |
p. 513-519
7 p.
|
artikel
|
| 74 |
The crystalline to amorphous transformation in silicon
|
Washburn, Jack
|
|
1983
|
201-210 |
P1 |
p. 345-350
6 p.
|
artikel
|
| 75 |
The damage induced on the (111) silicon surface by low energy helium ions investigated by ion scattering spectroscopy (ISS)
|
Bertrand, P.
|
|
1983
|
201-210 |
P1 |
p. 371-373
3 p.
|
artikel
|
| 76 |
The diffusion approximation in atomic mixing
|
Collins, R.
|
|
1983
|
201-210 |
P1 |
p. 147-156
10 p.
|
artikel
|
| 77 |
The effects of implanted oxygen on Pd2Si formation
|
Scott, D.M.
|
|
1983
|
201-210 |
P1 |
p. 297-301
5 p.
|
artikel
|
| 78 |
The influence of radiation damage on the sputtering yield of silicon
|
Sielanko, J.
|
|
1983
|
201-210 |
P1 |
p. 483-486
4 p.
|
artikel
|
| 79 |
The influence of surface stress on the shapes of ion bombarded surface asperities
|
Belson, Jeffrey
|
|
1983
|
201-210 |
P1 |
p. 503-508
6 p.
|
artikel
|
| 80 |
The irradiation of tungsten with metallic diatomic molecular ions: atomic resolution observations of depleted zones
|
Pramanik, Dipankar
|
|
1983
|
201-210 |
P1 |
p. 453-459
7 p.
|
artikel
|
| 81 |
The physical properties of thin Ag films formed under the simultaneous ion implantation in the substrate
|
Pranevichus, Liudvikas
|
|
1983
|
201-210 |
P1 |
p. 179-184
6 p.
|
artikel
|
| 82 |
Transmission electron microscopy study of ion implantation induced Si amorphization
|
Ruault, M.O.
|
|
1983
|
201-210 |
P1 |
p. 351-356
6 p.
|
artikel
|
| 83 |
Vacancy production in molybdenum by low energy light ion bombardment: Computer simulation
|
Hou, M.
|
|
1983
|
201-210 |
P1 |
p. 19-25
7 p.
|
artikel
|
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